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Discrete Semiconductors
Vishay Siliconix SQJ411EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
Number of Elements |
1 |
Power Dissipation (Max) |
68W Tc |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Turn Off Delay Time |
198 ns |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Reach Compliance Code |
unknown |
JESD-30 Code |
R-PSSO-G4 |
Mounting Type |
Surface Mount |
Factory Lead Time |
12 Weeks |
Drain to Source Voltage (Vdss) |
12V |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
32 ns |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
5.8m Ω @ 15A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
9100pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs |
150nC @ 4.5V |
Vgs (Max) |
±8V |
Continuous Drain Current (ID) |
-60A |
Number of Channels |
1 |
Gate to Source Voltage (Vgs) |
8V |
Drain Current-Max (Abs) (ID) |
52A |
Drain-source On Resistance-Max |
0.0058Ohm |
Drain to Source Breakdown Voltage |
-12V |
Avalanche Energy Rating (Eas) |
45 mJ |
Max Junction Temperature (Tj) |
175°C |
Height |
1.267mm |
Power Dissipation |
68W |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJ444EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Supplier Device Package |
PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
68W Tc |
Operating Temperature |
-55°C~175°C TJ |
Factory Lead Time |
14 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.2mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
Drain to Source Voltage (Vdss) |
40V |
Vgs (Max) |
±20V |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJ446EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Supplier Device Package |
PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
46W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
5mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
4220pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
Drain to Source Voltage (Vdss) |
40V |
Vgs (Max) |
±20V |
Vishay Siliconix SQJ464EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
32A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
12 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Power Dissipation (Max) |
45W Tc |
Reach Compliance Code |
unknown |
Input Capacitance (Ciss) (Max) @ Vds |
2086pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
JESD-30 Code |
R-PSSO-G4 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
17m Ω @ 7.1A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reference Standard |
AEC-Q101 |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Drain Current-Max (Abs) (ID) |
32A |
Drain-source On Resistance-Max |
0.017Ohm |
Pulsed Drain Current-Max (IDM) |
130A |
DS Breakdown Voltage-Min |
60V |
Avalanche Energy Rating (Eas) |
31 mJ |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Lead Free |
Vishay Siliconix SQJ840EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
28 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Number of Pins |
8 |
Supplier Device Package |
PowerPAK® SO-8 |
Weight |
506.605978mg |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Element Configuration |
Single |
Factory Lead Time |
12 Weeks |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2016 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Channels |
1 |
Power Dissipation (Max) |
46W Tc |
Turn On Delay Time |
11 ns |
Threshold Voltage |
1.7V |
Gate to Source Voltage (Vgs) |
20V |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
11ns |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
17 ns |
Continuous Drain Current (ID) |
30A |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
9.3mOhm @ 10.3A, 10V |
Drain to Source Breakdown Voltage |
30V |
Input Capacitance |
1.9nF |
Drain to Source Resistance |
9.3mOhm |
Rds On Max |
9.3 mΩ |
Nominal Vgs |
1.7 V |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix SQJ848EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
38 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
47A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Factory Lead Time |
12 Weeks |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Power Dissipation (Max) |
68W Tc |
Pin Count |
8 |
Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
Rise Time |
10ns |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
68W |
Case Connection |
DRAIN |
Turn On Delay Time |
18 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
7.5m Ω @ 10.3A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 20V |
JESD-30 Code |
R-PSSO-G4 |
Element Configuration |
Single |
Vgs (Max) |
±20V |
Fall Time (Typ) |
17 ns |
Continuous Drain Current (ID) |
30A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
47A |
Drain-source On Resistance-Max |
0.009Ohm |
Drain to Source Breakdown Voltage |
40V |
Nominal Vgs |
2 V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Vishay Siliconix SQJ860EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
JESD-30 Code |
R-PSSO-G4 |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Turn Off Delay Time |
30 ns |
Operating Temperature |
-55°C~175°C TJ |
Power Dissipation (Max) |
48W Tc |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Reach Compliance Code |
unknown |
Mounting Type |
Surface Mount |
Factory Lead Time |
12 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
Vgs (Max) |
±20V |
Power Dissipation |
48W |
Case Connection |
DRAIN |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
6m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
Number of Channels |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Continuous Drain Current (ID) |
60A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
36A |
Drain-source On Resistance-Max |
0.006Ohm |
Drain to Source Breakdown Voltage |
40V |
Max Junction Temperature (Tj) |
175°C |
Height |
1.267mm |
Operating Mode |
ENHANCEMENT MODE |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJ886EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
60A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
55W Tc |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Factory Lead Time |
12 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2015 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
JESD-30 Code |
R-PSSO-G4 |
Turn Off Delay Time |
29 ns |
Number of Channels |
1 |
Fall Time (Typ) |
6 ns |
Continuous Drain Current (ID) |
60A |
Case Connection |
DRAIN |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
4.5m Ω @ 15.3A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2922pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
Rise Time |
17ns |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
55W |
Threshold Voltage |
2V |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.0045Ohm |
Drain to Source Breakdown Voltage |
40V |
Pulsed Drain Current-Max (IDM) |
240A |
Avalanche Energy Rating (Eas) |
64 mJ |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Vishay Siliconix SQJA60EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Turn Off Delay Time |
21 ns |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
JESD-30 Code |
R-PSSO-G4 |
Factory Lead Time |
14 Weeks |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Reach Compliance Code |
unknown |
Power Dissipation (Max) |
45W Tc |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Vgs (Max) |
±20V |
Power Dissipation |
45W |
Case Connection |
DRAIN |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
12.5m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 25V |
Number of Channels |
1 |
Operating Mode |
ENHANCEMENT MODE |
Continuous Drain Current (ID) |
30A |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
24.6A |
Drain to Source Breakdown Voltage |
60V |
Pulsed Drain Current-Max (IDM) |
84A |
Avalanche Energy Rating (Eas) |
26 mJ |
Max Junction Temperature (Tj) |
175°C |
Height |
1.267mm |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJA68EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8L |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
45W Tc |
Turn Off Delay Time |
15 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
12 Weeks |
Published |
2018 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Operating Temperature |
-55°C~175°C TJ |
JESD-30 Code |
R-PSSO-G4 |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
14A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
45W |
Case Connection |
DRAIN |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
92m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
8nC @ 10V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.092Ohm |
Drain to Source Breakdown Voltage |
100V |
Avalanche Energy Rating (Eas) |
4 mJ |
Max Junction Temperature (Tj) |
175°C |
Feedback Cap-Max (Crss) |
20 pF |
Turn Off Time-Max (toff) |
40ns |
Turn On Time-Max (ton) |
25ns |
Height |
1.267mm |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJA70EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Power Dissipation (Max) |
27W Tc |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
14.7A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
12 Weeks |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Number of Elements |
1 |
Reach Compliance Code |
unknown |
Input Capacitance (Ciss) (Max) @ Vds |
220pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
7nC @ 10V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
95m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSSO-G4 |
Drain to Source Voltage (Vdss) |
100V |
Vgs (Max) |
±20V |
Drain Current-Max (Abs) (ID) |
14.7A |
Drain-source On Resistance-Max |
0.208Ohm |
Pulsed Drain Current-Max (IDM) |
18A |
DS Breakdown Voltage-Min |
100V |
Avalanche Energy Rating (Eas) |
5 mJ |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix SQJA72EP-T1_GE3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
12 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
PowerPAK® SO-8 |
Supplier Device Package |
PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25℃ |
37A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
55W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
19mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1390pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Drain to Source Voltage (Vdss) |
100V |
Vgs (Max) |
±20V |
Drain to Source Resistance |
15.4mOhm |
RoHS Status |
ROHS3 Compliant |