Showing 15145–15156 of 15245 results

Discrete Semiconductors

Vishay Siliconix SUD50N03-12P-GE3

In stock

SKU: SUD50N03-12P-GE3-11
Manufacturer

Vishay Siliconix

Turn Off Delay Time

20 ns

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

TO-252

Current - Continuous Drain (Id) @ 25℃

16.8A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Min Operating Temperature

-55°C

Contact Plating

Tin

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2014

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

175°C

Power Dissipation (Max)

39W Tc

Number of Channels

1

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

17mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Rise Time

15ns

Element Configuration

Single

Turn On Delay Time

9 ns

Fall Time (Typ)

12 ns

Continuous Drain Current (ID)

17.5A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Input Capacitance

1.6nF

Drain to Source Resistance

12mOhm

Rds On Max

17 mΩ

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUD50N03-16P-E3

In stock

SKU: SUD50N03-16P-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Number of Pins

3

Supplier Device Package

TO-252, (D-Pak)

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

6.5W Ta 40.8W Tc

Turn Off Delay Time

25 ns

Element Configuration

Single

Operating Temperature

-55°C~175°C TJ

Published

2009

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

SMD/SMT

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

Mounting Type

Surface Mount

Mount

Surface Mount

Fall Time (Typ)

12 ns

FET Type

N-Channel

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V

Rise Time

20ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Continuous Drain Current (ID)

15A

Gate to Source Voltage (Vgs)

20V

Power Dissipation

6.5W

Drain to Source Breakdown Voltage

30V

Dual Supply Voltage

30V

Input Capacitance

1.15nF

Drain to Source Resistance

16mOhm

Rds On Max

16 mΩ

REACH SVHC

No SVHC

Rds On (Max) @ Id, Vgs

16mOhm @ 15A, 10V

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUD50P04-13L-E3

In stock

SKU: SUD50P04-13L-E3-11
Manufacturer

Vishay Siliconix

Element Configuration

Single

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

60A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3W Ta 93.7W Tc

Turn Off Delay Time

50 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Series

TrenchFET®

JESD-609 Code

e3

Published

2008

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

13mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Pin Count

4

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

60A

Threshold Voltage

-3V

Turn On Delay Time

13 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

13m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

3120pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Rise Time

10ns

Vgs (Max)

±20V

Fall Time (Typ)

20 ns

Power Dissipation

93.7mW

Operating Mode

ENHANCEMENT MODE

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

50A

Drain to Source Breakdown Voltage

40V

Avalanche Energy Rating (Eas)

80 mJ

Height

2.38mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Case Connection

DRAIN

Lead Free

Lead Free

Vishay Siliconix SUD50P06-15L-E3

In stock

SKU: SUD50P06-15L-E3-11
Manufacturer

Vishay Siliconix

Number of Channels

1

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3W Ta 136W Tc

Turn Off Delay Time

175 ns

Packaging

Tape & Reel (TR)

Published

2011

Operating Temperature

-55°C~175°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

15mOhm

Terminal Form

GULL WING

Pin Count

4

JESD-30 Code

R-PSSO-G2

Contact Plating

Tin

Factory Lead Time

14 Weeks

Fall Time (Typ)

175 ns

Continuous Drain Current (ID)

-50A

Case Connection

DRAIN

Turn On Delay Time

15 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

15m Ω @ 17A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4950pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Rise Time

70ns

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-60V

Pulsed Drain Current-Max (IDM)

80A

Nominal Vgs

-1 V

Height

2.39mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

3W

Lead Free

Lead Free

Vishay Siliconix SUD50P10-43L-E3

In stock

SKU: SUD50P10-43L-E3-11
Manufacturer

Vishay Siliconix

Number of Channels

1

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

37.1A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

8.3W Ta 136W Tc

Turn Off Delay Time

110 ns

Packaging

Tape & Reel (TR)

Published

2013

Operating Temperature

-55°C~175°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

43mOhm

Terminal Form

GULL WING

Pin Count

4

JESD-30 Code

R-PSSO-G2

Contact Plating

Tin

Factory Lead Time

14 Weeks

Fall Time (Typ)

100 ns

Continuous Drain Current (ID)

-9.2A

Case Connection

DRAIN

Turn On Delay Time

15 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

43m Ω @ 9.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Rise Time

160ns

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-100V

Pulsed Drain Current-Max (IDM)

40A

Max Junction Temperature (Tj)

175°C

Height

2.507mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Power Dissipation

8.3W

Lead Free

Lead Free

Vishay Siliconix SUD70090E-GE3

In stock

SKU: SUD70090E-GE3-11
Manufacturer

Vishay Siliconix

Packaging

Bulk

Mount

Surface Mount

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

7.5V 10V

Number of Elements

1

Power Dissipation (Max)

125W Tc

Terminal Form

GULL WING

Factory Lead Time

14 Weeks

Published

2017

Series

ThunderFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds

1950pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

8.9m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSSO-G2

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Continuous Drain Current (ID)

50A

Drain-source On Resistance-Max

0.0089Ohm

Pulsed Drain Current-Max (IDM)

120A

DS Breakdown Voltage-Min

100V

Avalanche Energy Rating (Eas)

80 mJ

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUG80050E-GE3

In stock

SKU: SUG80050E-GE3-11
Manufacturer

Vishay Siliconix

Reach Compliance Code

unknown

Mounting Type

Through Hole

Package / Case

TO-247-3

Current - Continuous Drain (Id) @ 25℃

100A Tc

Drive Voltage (Max Rds On, Min Rds On)

7.5V 10V

Power Dissipation (Max)

500W Tc

Turn Off Delay Time

72 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Series

ThunderFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

14 Weeks

Number of Channels

1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Power Dissipation

500W

Turn On Delay Time

18 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

5.4m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

6250pF @ 75V

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

150V

Max Junction Temperature (Tj)

175°C

Height

25.11mm

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM110N03-03P-E3

In stock

SKU: SUM110N03-03P-E3-11
Manufacturer

Vishay Siliconix

Published

2009

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

110A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 375W Tc

Turn Off Delay Time

90 ns

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Time@Peak Reflow Temperature-Max (s)

40

Input Capacitance (Ciss) (Max) @ Vds

12100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.75W

Case Connection

DRAIN

Turn On Delay Time

20 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2.6m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Pin Count

4

JESD-30 Code

R-PSSO-G2

Rise Time

20ns

Vgs (Max)

±20V

Fall Time (Typ)

25 ns

Continuous Drain Current (ID)

110A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0026Ohm

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

400A

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM110N03-04P-E3

In stock

SKU: SUM110N03-04P-E3-11
Manufacturer

Vishay Siliconix

Pin Count

4

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

110A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 120W Tc

Turn Off Delay Time

40 ns

Packaging

Tape & Reel (TR)

Published

2009

Operating Temperature

-55°C~175°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Form

GULL WING

Mounting Type

Surface Mount

Mount

Surface Mount

Rise Time

12ns

Vgs (Max)

±20V

Power Dissipation

3.75W

Turn On Delay Time

12 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

4.2m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

60nC @ 4.5V

Element Configuration

Single

JESD-30 Code

R-PSSO-G2

Fall Time (Typ)

10 ns

Continuous Drain Current (ID)

110A

Threshold Voltage

1V

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0042Ohm

Drain to Source Breakdown Voltage

30V

Radiation Hardening

No

REACH SVHC

No SVHC

Operating Mode

ENHANCEMENT MODE

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM110N04-03-E3

In stock

SKU: SUM110N04-03-E3-11
Manufacturer

Vishay Siliconix

Series

TrenchFET®

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

110A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 375W Tc

Turn Off Delay Time

55 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Element Configuration

Single

Published

2009

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Termination

SMD/SMT

ECCN Code

EAR99

Terminal Form

GULL WING

Pin Count

4

JESD-30 Code

R-PSSO-G2

Number of Channels

1

Mounting Type

Surface Mount

Mount

Surface Mount

Continuous Drain Current (ID)

110A

Power Dissipation

437.5W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.8m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

8250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Rise Time

170ns

Vgs (Max)

±20V

Fall Time (Typ)

110 ns

Reverse Recovery Time

60 ns

Threshold Voltage

4V

Gate to Source Voltage (Vgs)

20V

Operating Mode

ENHANCEMENT MODE

Drain-source On Resistance-Max

0.0028Ohm

Drain to Source Breakdown Voltage

40V

Pulsed Drain Current-Max (IDM)

440A

Dual Supply Voltage

40V

Nominal Vgs

4 V

Height

4.83mm

Length

10.41mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

Turn On Delay Time

25 ns

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM110N04-04-E3

In stock

SKU: SUM110N04-04-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

110A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 250W Tc

Turn Off Delay Time

75 ns

Terminal Form

GULL WING

Factory Lead Time

6 Weeks

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Operating Temperature

-55°C~175°C TJ

Pin Count

4

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Rise Time

115ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.75W

Turn On Delay Time

20 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

3.5m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Vgs (Max)

±20V

Fall Time (Typ)

85 ns

Continuous Drain Current (ID)

110A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0035Ohm

Drain to Source Breakdown Voltage

40V

Pulsed Drain Current-Max (IDM)

350A

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM110N04-2M3L-E3

In stock

SKU: SUM110N04-2M3L-E3-11
Manufacturer

Vishay Siliconix

FET Type

N-Channel

Number of Pins

3

Supplier Device Package

TO-263 (D2Pak)

Current - Continuous Drain (Id) @ 25℃

110A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

3.75W Ta 375W Tc

Turn Off Delay Time

125 ns

Operating Temperature

-55°C~175°C TJ

Published

2012

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

SMD/SMT

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

Element Configuration

Single

Power Dissipation

3.75W

Turn On Delay Time

25 ns

Mounting Type

Surface Mount

Mount

Surface Mount

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

40V

Gate Charge (Qg) (Max) @ Vgs

360nC @ 10V

Rise Time

100ns

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±20V

Fall Time (Typ)

200 ns

Reverse Recovery Time

56 ns

Continuous Drain Current (ID)

110A

Threshold Voltage

3V

Vgs(th) (Max) @ Id

3V @ 250μA

Rds On (Max) @ Id, Vgs

2.3mOhm @ 30A, 10V

Dual Supply Voltage

40V

Input Capacitance

13.6nF

Drain to Source Resistance

2.3mOhm

Rds On Max

2.3 mΩ

Nominal Vgs

3 V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 25V

Lead Free

Lead Free