Showing 15169–15180 of 15245 results

Discrete Semiconductors

Vishay Siliconix SUM60030E-GE3

In stock

SKU: SUM60030E-GE3-11
Manufacturer

Vishay Siliconix

Terminal Position

SINGLE

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

120A Tc

Drive Voltage (Max Rds On, Min Rds On)

7.5V 10V

Number of Elements

1

Power Dissipation (Max)

375W Tc

Packaging

Tape & Reel (TR)

Published

2016

Operating Temperature

-55°C~175°C TJ

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Mount

Surface Mount

Factory Lead Time

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds

7910pF @ 40V

Gate Charge (Qg) (Max) @ Vgs

141nC @ 10V

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

3.2m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Terminal Form

GULL WING

Drain to Source Voltage (Vdss)

80V

Vgs (Max)

±20V

Continuous Drain Current (ID)

120A

Drain-source On Resistance-Max

0.0032Ohm

Pulsed Drain Current-Max (IDM)

250A

DS Breakdown Voltage-Min

80V

Avalanche Energy Rating (Eas)

245 mJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM70040M-GE3

In stock

SKU: SUM70040M-GE3-11
Manufacturer

Vishay Siliconix

Factory Lead Time

14 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

7

Supplier Device Package

TO-263-7

Current - Continuous Drain (Id) @ 25℃

120A Tc

Drive Voltage (Max Rds On, Min Rds On)

7.5V 10V

Power Dissipation (Max)

375W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Continuous Drain Current (ID)

120A

Threshold Voltage

4V

Input Capacitance

5.1nF

Drain to Source Resistance

3mOhm

Rds On Max

3.8 mΩ

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM90N03-2M2P-E3

In stock

SKU: SUM90N03-2M2P-E3-11
Manufacturer

Vishay Siliconix

Published

2016

Mount

Surface Mount

Mounting Type

Surface Mount

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

90A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 250W Tc

Turn Off Delay Time

55 ns

Operating Temperature

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

30

Factory Lead Time

14 Weeks

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

2.2mOhm

Terminal Finish

Matte Tin (Sn)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Packaging

Cut Tape (CT)

Pin Count

4

Rise Time

180ns

Vgs (Max)

±20V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.75W

Turn On Delay Time

55 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.2m Ω @ 32A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

12065pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

257nC @ 10V

JESD-30 Code

R-PSSO-G2

Number of Channels

1

Fall Time (Typ)

12 ns

Continuous Drain Current (ID)

33A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

90A

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

90A

Height

4.83mm

Length

10.41mm

Width

9.65mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SUM90N06-5M5P-E3

In stock

SKU: SUM90N06-5M5P-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Number of Pins

3

Supplier Device Package

TO-263 (D2Pak)

Weight

1.437803g

Current - Continuous Drain (Id) @ 25℃

90A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 272W Tc

Turn Off Delay Time

25 ns

Power Dissipation

3.75W

Operating Temperature

-55°C~175°C TJ

Published

2016

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Resistance

5.5MOhm

Max Operating Temperature

175°C

Min Operating Temperature

-55°C

Number of Channels

1

Element Configuration

Single

Mounting Type

Surface Mount

Mount

Surface Mount

Gate to Source Voltage (Vgs)

20V

FET Type

N-Channel

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4700pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Rise Time

10ns

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

90A

Drain to Source Breakdown Voltage

60V

Input Capacitance

4.7nF

Turn On Delay Time

16 ns

Drain to Source Resistance

5.5mOhm

Rds On Max

5.5 mΩ

Height

4.83mm

Length

10.41mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 10V

Lead Free

Lead Free

Vishay Siliconix SUM90N10-8M2P-E3

In stock

SKU: SUM90N10-8M2P-E3-11
Manufacturer

Vishay Siliconix

Published

2013

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

90A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 300W Tc

Turn Off Delay Time

34 ns

Operating Temperature

-55°C~175°C TJ

Pin Count

3

Factory Lead Time

14 Weeks

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

8.2mOhm

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

90A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

300W

Turn On Delay Time

23 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

8.2m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

6290pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Rise Time

17ns

Vgs (Max)

±20V

Number of Channels

1

Element Configuration

Single

Threshold Voltage

2.5V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

100V

Pulsed Drain Current-Max (IDM)

240A

Max Junction Temperature (Tj)

175°C

Height

4.826mm

Length

10.41mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SUM90P10-19-E3

In stock

SKU: SUM90P10-19-E3-11
Manufacturer

Vishay Siliconix

JESD-30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

90A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

13.6W Ta 375W Tc

Turn Off Delay Time

125 ns

Operating Temperature

-55°C~175°C TJ

Published

2009

Series

TrenchFET®

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Form

GULL WING

Pin Count

4

Mounting Type

Surface Mount

Mount

Surface Mount

Rise Time

720ns

Drain to Source Voltage (Vdss)

100V

Case Connection

DRAIN

Turn On Delay Time

30 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

19m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

12000pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Vgs (Max)

±20V

Fall Time (Typ)

610 ns

Continuous Drain Current (ID)

17A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

90A

Drain to Source Breakdown Voltage

-100V

Pulsed Drain Current-Max (IDM)

90A

Radiation Hardening

No

Power Dissipation

13.6W

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUM90P10-19L-E3

In stock

SKU: SUM90P10-19L-E3-11
Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

90A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

13.6W Ta 375W Tc

Turn Off Delay Time

145 ns

Number of Channels

1

Factory Lead Time

14 Weeks

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

19mOhm

Terminal Form

GULL WING

Pin Count

4

JESD-30 Code

R-PSSO-G2

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Fall Time (Typ)

870 ns

Continuous Drain Current (ID)

-90A

Case Connection

DRAIN

Turn On Delay Time

20 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

19m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

11100pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

326nC @ 10V

Rise Time

510ns

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

375W

Threshold Voltage

-3V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

-100V

Avalanche Energy Rating (Eas)

245 mJ

Max Junction Temperature (Tj)

175°C

Nominal Vgs

-3 V

Height

5.08mm

Length

10.41mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SUP10250E-GE3

In stock

SKU: SUP10250E-GE3-11
Manufacturer

Vishay Siliconix

Series

ThunderFET®

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

63A Tc

Drive Voltage (Max Rds On, Min Rds On)

7.5V 10V

Power Dissipation (Max)

375W Tc

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2017

Factory Lead Time

14 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Vgs(th) (Max) @ Id

4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Drain to Source Voltage (Vdss)

250V

Vgs (Max)

±20V

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUP40010EL-GE3

In stock

SKU: SUP40010EL-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~175°C TJ

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

120A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Power Dissipation (Max)

375W Tc

Packaging

Tube

Series

ThunderFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

SINGLE

Mounting Type

Through Hole

Factory Lead Time

14 Weeks

Gate Charge (Qg) (Max) @ Vgs

230nC @ 10V

JESD-30 Code

R-PSFM-T3

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.8m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

11155pF @ 30V

Drain to Source Voltage (Vdss)

40V

Vgs (Max)

±20V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JEDEC-95 Code

TO-220AB

Drain Current-Max (Abs) (ID)

120A

Drain-source On Resistance-Max

0.0018Ohm

Pulsed Drain Current-Max (IDM)

300A

DS Breakdown Voltage-Min

40V

Avalanche Energy Rating (Eas)

320 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUP50010E-GE3

In stock

SKU: SUP50010E-GE3-11
Manufacturer

Vishay Siliconix

Factory Lead Time

14 Weeks

Mounting Type

Through Hole

Package / Case

TO-220-3

Current - Continuous Drain (Id) @ 25℃

150A Tc

Drive Voltage (Max Rds On, Min Rds On)

7.5V 10V

Power Dissipation (Max)

375W Tc

Operating Temperature

-55°C~175°C TJ

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

10895pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

212nC @ 10V

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

RoHS Status

ROHS3 Compliant

Vishay Siliconix SUP50N03-5M1P-GE3

In stock

SKU: SUP50N03-5M1P-GE3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.7W Ta 59.5W Tc

Time@Peak Reflow Temperature-Max (s)

30

Mount

Through Hole

Packaging

Bulk

Published

2008

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Peak Reflow Temperature (Cel)

260

Turn Off Delay Time

35 ns

Pin Count

3

Rise Time

9ns

Drain to Source Voltage (Vdss)

30V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.7W

Turn On Delay Time

8 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

5.1m Ω @ 22A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2780pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Number of Channels

1

Element Configuration

Single

Vgs (Max)

±20V

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

50A

Threshold Voltage

1V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Avalanche Energy Rating (Eas)

80 mJ

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Vishay Siliconix SUP60N10-18P-E3

In stock

SKU: SUP60N10-18P-E3-11
Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~175°C TJ

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

60A Tc

Drive Voltage (Max Rds On, Min Rds On)

8V 10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 150W Tc

Pin Count

3

Mount

Through Hole

Packaging

Tape & Reel (TR)

Published

2011

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

18.3mOhm

Terminal Position

SINGLE

Turn Off Delay Time

18 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Turn On Delay Time

12 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

18.3m Ω @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Rise Time

10ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.75W

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

60A

Threshold Voltage

4.5V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Nominal Vgs

4.5 V

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free