Manufacturer	Vishay Siliconix
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Current - Continuous Drain (Id) @ 25℃	150A Tc
Drive Voltage (Max Rds On, Min Rds On)	7.5V 10V
Power Dissipation (Max)	375W Tc
Operating Temperature	-55°C~175°C TJ
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.18m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10870pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	214nC @ 10V
Drain to Source Voltage (Vdss)	100V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Operating Mode	ENHANCEMENT MODE
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	75A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	3.75W Ta 187W Tc
Turn Off Delay Time	150 ns
Packaging	Tube
Published	2008
Operating Temperature	-55°C~175°C TJ
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	7mOhm
Pin Count	3
Number of Channels	1
Element Configuration	Single
Mounting Type	Through Hole
Mount	Through Hole
Threshold Voltage	-1V
JEDEC-95 Code	TO-220AB
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	225ns
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±20V
Fall Time (Typ)	210 ns
Continuous Drain Current (ID)	-75A
Case Connection	DRAIN
Power Dissipation	187W

Manufacturer	Vishay Siliconix
Series	TrenchFET®
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	75A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	3.7W Ta 250W Tc
Turn Off Delay Time	115 ns
Operating Temperature	-55°C~175°C TJ
Element Configuration	Single
Mount	Through Hole
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Packaging	Tube
Operating Mode	ENHANCEMENT MODE
Continuous Drain Current (ID)	-75A
Threshold Voltage	-2V
Turn On Delay Time	13 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	225nC @ 10V
Rise Time	140ns
Drain to Source Voltage (Vdss)	55V
Vgs (Max)	±20V
Fall Time (Typ)	175 ns
Power Dissipation	250W
Case Connection	DRAIN

Manufacturer	Vishay Siliconix
Power Dissipation	166W
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Current - Continuous Drain (Id) @ 25℃	85A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	3.75W Ta 166W Tc
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Turn Off Delay Time	50 ns
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	4.3mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Element Configuration	Single
Mounting Type	Through Hole
Mount	Through Hole
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Continuous Drain Current (ID)	85A
FET Type	N-Channel
Turn On Delay Time	15 ns
Input Capacitance	4.5nF
Drain to Source Resistance	4.3mOhm
Rds On Max	4.3 mΩ
Height	15.494mm
Length	10.4902mm
Width	4.6482mm

Discrete Semiconductors