Manufacturer	Vishay Siliconix
Operating Temperature	-55°C~150°C TJ
Number of Pins	3
Supplier Device Package	TO-226AA
Weight	453.59237mg
Current - Continuous Drain (Id) @ 25℃	270mA Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	800mW Ta
Number of Channels	1
Turn Off Delay Time	21 ns
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	10Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Mounting Type	Through Hole
Mount	Through Hole
Fall Time (Typ)	15.5 ns
Power Dissipation	800mW
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	3nC @ 15V
Rise Time	15.5ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Continuous Drain Current (ID)	-270mA
Gate to Source Voltage (Vgs)	20V
Element Configuration	Single
Drain to Source Breakdown Voltage	-60V
Drain to Source Resistance	6Ohm
Rds On Max	6 Ω
Height	4.7mm
Length	4.7mm
Width	3.68mm
RoHS Status	ROHS3 Compliant

Manufacturer	Vishay Siliconix
Max Power Dissipation	500mW
Mounting Type	Through Hole
Package / Case	TO-206AC, TO-52-3 Metal Can
Number of Pins	3
Supplier Device Package	TO-206AC (TO-52)
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Mount	Through Hole
Power - Max	500mW
Element Configuration	Single
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 0V
Gate to Source Voltage (Vgs)	-30V
Input Capacitance	160pF
Drain to Source Resistance	3Ohm
Current - Drain (Idss) @ Vds (Vgs=0)	500mA @ 10V
Voltage - Cutoff (VGS off) @ Id	4V @ 3nA
Voltage - Breakdown (V(BR)GSS)	30V
Resistance - RDS(On)	3Ohms
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant

Manufacturer	Vishay Siliconix
Pbfree Code	yes
Mounting Type	Through Hole
Package / Case	TO-206AC, TO-52-3 Metal Can
Transistor Element Material	SILICON
Number of Elements	1
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Terminal Form	WIRE
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	MATTE TIN
Additional Feature	LOW INSERTION LOSS
HTS Code	8541.21.00.95
Max Power Dissipation	500mW
Terminal Position	BOTTOM
Mount	Through Hole
Factory Lead Time	12 Weeks
Transistor Application	SWITCHING
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	O-MBCY-W3
Qualification Status	Not Qualified
Element Configuration	Single
Operating Mode	DEPLETION MODE
Case Connection	GATE
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 0V
Gate to Source Voltage (Vgs)	-30V
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Drain-source On Resistance-Max	3Ohm
FET Technology	JUNCTION
Feedback Cap-Max (Crss)	30 pF
Current - Drain (Idss) @ Vds (Vgs=0)	500mA @ 10V
Voltage - Cutoff (VGS off) @ Id	4V @ 3nA
Voltage - Breakdown (V(BR)GSS)	30V
Resistance - RDS(On)	3Ohm

Manufacturer	Vishay Siliconix
Contact Plating	Through Hole
Mount	Through Hole
Mounting Type	TO-206AC, TO-52-3 Metal Can
Surface Mount	3
Number of Pins	TO-206AC (TO-52)
Product Status	-55°C~150°C TJ
Operating Temperature	Tube
Pbfree Code	Obsolete
Part Status	1 (Unlimited)
Terminal Finish	150°C
Max Operating Temperature	-55°C
Voltage - Rated DC	500mW
Configuration	Single
Power Dissipation	500mW
Power - Max	N-Channel
Transistor Application	160pF @ 0V
Continuous Drain Current (ID)	-30V
Drain to Source Breakdown Voltage	160pF
Power Dissipation-Max (Abs)	7Ohm
Highest Frequency Band	200mA @ 10V
Current - Drain (Idss) @ Vds (Vgs=0)	1.5V @ 3nA
Voltage - Cutoff (VGS off) @ Id	30V
Voltage - Breakdown (V(BR)GSS)	7Ohms
REACH SVHC	Non-RoHS Compliant

Discrete Semiconductors