Showing 15205–15216 of 15245 results
Vishay Siliconix U441-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
9 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-71-6 |
| Number of Pins |
6 |
| Breakdown Voltage / V |
-25V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2005 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
500mW |
| Current Rating |
50mA |
| Element Configuration |
Dual |
| Power Dissipation |
500mW |
| Power - Max |
500mW |
| FET Type |
2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
| Continuous Drain Current (ID) |
30mA |
| Gate to Source Voltage (Vgs) |
25V |
| Input Capacitance |
3pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
6mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
1V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix VP0808B-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AD, TO-39-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
880mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta |
| Turn Off Delay Time |
20 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
9 Weeks |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
-280mA |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
2 |
| Drain to Source Voltage (Vdss) |
80V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
| Rise Time |
30ns |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
-3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.88A |
| Drain-source On Resistance-Max |
5Ohm |
| Drain to Source Breakdown Voltage |
-80V |
| Feedback Cap-Max (Crss) |
25 pF |
| Height |
6.6mm |
| Length |
9.4mm |
| Width |
8.15mm |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
Vishay Siliconix VP1008B
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AD, TO-39-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
790mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
6.25W Ta |
| Turn Off Delay Time |
20 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
51 Weeks |
| Published |
2000 |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
225 |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
2 |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
790mA |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 25V |
| Rise Time |
30ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.79A |
| Drain-source On Resistance-Max |
5Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Feedback Cap-Max (Crss) |
25 pF |
| Height |
6.6mm |
| Length |
9.4mm |
| Width |
8.15mm |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Contains Lead |
Vishay Siliconix VQ1004P
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Number of Channels |
4 |
| Package / Case |
CDIP |
| Number of Pins |
14 |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Published |
2005 |
| JESD-609 Code |
e0 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
2W |
| Pin Count |
14 |
| Mount |
Through Hole |
| Power Dissipation |
2W |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Polarity/Channel Type |
N-CHANNEL |
| Continuous Drain Current (ID) |
460mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance |
3.5Ohm |
| Height |
3.05mm |
| Length |
19.56mm |
| Width |
7.87mm |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
Vishay Siliconix VQ1004P-E3
In stock
| Manufacturer |
Vishay Siliconix |
|---|---|
| Factory Lead Time |
15 Weeks |
| Mount |
Through Hole |
| Number of Pins |
14 |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
4 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
2W |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
460mA |
| Gate to Source Voltage (Vgs) |
20V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Vishay SIR5623DP-T1-RE3
In stock
| Manufacturer |
Vishay |
|---|---|
| Package / Case |
PowerPAK SO-8 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
37.1 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
59.5 W |
| Qg - Gate Charge |
21.8 nC |
| Rds On - Drain-Source Resistance |
24 mOhms |
| Transistor Polarity |
P-Channel |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Vgs - Gate-Source Voltage |
20 V |
| Vgs th - Gate-Source Threshold Voltage |
2.6 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Vishay SISS5112DN-T1-GE3
In stock
| Manufacturer |
Vishay |
|---|---|
| Package / Case |
PowerPak-8 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
40.7 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
52 W |
| Qg - Gate Charge |
10.6 nC |
| Rds On - Drain-Source Resistance |
14.9 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
100 V |
| Vgs - Gate-Source Voltage |
20 V |
| Vgs th - Gate-Source Threshold Voltage |
4 V |
| Technology |
Si |
| Number of Channels |
1 Channel |