Showing 1549–1560 of 15245 results
Filter by price
Filter by manufacturer
Series
Discrete Semiconductors
HARRIS HGTG40N60B3
In stock
Manufacturer |
HARRIS |
---|---|
Input Type |
Standard |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247 |
Mfr |
Harris Corporation |
Package |
Tube |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Power - Max |
290 W |
Current - Collector (Ic) (Max) |
70 A |
Test Condition |
480V, 40A, 3Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
Gate Charge |
250 nC |
Current - Collector Pulsed (Icm) |
330 A |
Td (on/off) @ 25°C |
47ns/170ns |
Switching Energy |
1.05mJ (on), 800µJ (off) |
HARRIS HGTG7N60A4D
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247 |
Mfr |
Harris Corporation |
Package |
Tube |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Input Type |
Standard |
Power - Max |
125 W |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
34 A |
Test Condition |
390V, 7A, 25Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 7A |
Gate Charge |
37 nC |
Current - Collector Pulsed (Icm) |
56 A |
Td (on/off) @ 25°C |
11ns/100ns |
Switching Energy |
55µJ (on), 60µJ (off) |
Reverse Recovery Time (trr) |
34 ns |
HARRIS HGTP10N40E1
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220-3 |
Mfr |
Harris Corporation |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Input Type |
Standard |
Power - Max |
60 W |
Voltage - Collector Emitter Breakdown (Max) |
400 V |
Current - Collector (Ic) (Max) |
10 A |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 20V, 17.5A |
Gate Charge |
19 nC |
Current - Collector Pulsed (Icm) |
17.5 A |
HARRIS HGTP7N60B3D
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Mfr |
Harris Corporation |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Input Type |
Standard |
Power - Max |
60 W |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
14 A |
Test Condition |
480V, 7A, 50Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 7A |
Gate Charge |
37 nC |
Current - Collector Pulsed (Icm) |
56 A |
Td (on/off) @ 25°C |
26ns/130ns |
Switching Energy |
160µJ (on), 120µJ (off) |
Reverse Recovery Time (trr) |
37 ns |
HARRIS HGTP7N60C3
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Mfr |
Harris Corporation |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Input Type |
Standard |
Power - Max |
60 W |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
14 A |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 7A |
Gate Charge |
30 nC |
Current - Collector Pulsed (Icm) |
56 A |
HARRIS HUF75333S3
In stock
Manufacturer |
HARRIS |
---|---|
Series |
UltraFET™ |
Supplier Device Package |
D2PAK (TO-263) |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
150W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
16mOhm @ 66A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1300 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
66A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
85 nC @ 20 V |
Drain to Source Voltage (Vdss) |
55 V |
Vgs (Max) |
±20V |
HARRIS HUF75639S3
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK (TO-262) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Tube |
Power Dissipation (Max) |
200W (Tc) |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Series |
UltraFET™ |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
25mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2000 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
56A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
130 nC @ 20 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±20V |