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Series
Discrete Semiconductors
HARRIS IRF520
In stock
Manufacturer |
HARRIS |
---|---|
Operating Temperature |
-55°C ~ 175°C (TJ) |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
60W (Tc) |
Product Status |
Active |
Mounting Type |
Through Hole |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
270mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
9.2A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
15 nC @ 10 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±20V |
HARRIS IRF610
In stock
Manufacturer |
HARRIS |
---|---|
Product Status |
Active |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Base Product Number |
IRF610 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
36W (Tc) |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
140 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
3.3A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
8.2 nC @ 10 V |
Drain to Source Voltage (Vdss) |
200 V |
Vgs (Max) |
±20V |
HARRIS IRF710
In stock
Manufacturer |
HARRIS |
---|---|
Product Status |
Active |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Base Product Number |
IRF710 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
36W (Tc) |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.6Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
135 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
Drain to Source Voltage (Vdss) |
400 V |
Vgs (Max) |
±20V |
HARRIS IRF9510
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Tube |
Power Dissipation (Max) |
43W (Tc) |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Technology |
MOSFET (Metal Oxide) |
FET Type |
P-Channel |
Rds On (Max) @ Id, Vgs |
1.2Ohm @ 2.4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
200 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
8.7 nC @ 10 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±20V |
HARRIS IRFD310
In stock
Manufacturer |
HARRIS |
---|---|
Product Status |
Active |
Package / Case |
4-DIP (0.300, 7.62mm) |
Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
Base Product Number |
IRFD310 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
1W (Ta) |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.6Ohm @ 210mA, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
170 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
350mA (Ta) |
Gate Charge (Qg) (Max) @ Vgs |
17 nC @ 10 V |
Drain to Source Voltage (Vdss) |
400 V |
Vgs (Max) |
±20V |
HARRIS IRFP150
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AC |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Tube |
Power Dissipation (Max) |
230W (Tc) |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
55mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
2800 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
41A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
140 nC @ 10 V |
Drain to Source Voltage (Vdss) |
100 V |
Vgs (Max) |
±20V |
HARRIS IRFR420
In stock
Manufacturer |
HARRIS |
---|---|
Mounting Type |
Surface Mount |
Supplier Device Package |
D-Pak |
Base Product Number |
IRFR420 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
2.5W (Ta), 42W (Tc) |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Technology |
MOSFET (Metal Oxide) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3Ohm @ 1.4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
360 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
2.4A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 10 V |
Drain to Source Voltage (Vdss) |
500 V |
Vgs (Max) |
±20V |
HARRIS RF1S42N03L
In stock
Manufacturer |
HARRIS |
---|---|
Operating Temperature |
-55°C ~ 175°C (TJ) |
Supplier Device Package |
I2PAK (TO-262) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
90W (Tc) |
Product Status |
Active |
Mounting Type |
Through Hole |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs |
25mOhm @ 42A, 5V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds |
1650 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
Gate Charge (Qg) (Max) @ Vgs |
60 nC @ 10 V |
Drain to Source Voltage (Vdss) |
30 V |
Vgs (Max) |
±10V |
HARRIS RFP4N40
In stock
Manufacturer |
HARRIS |
---|---|
Product Status |
Active |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220-3 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
60W (Tc) |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
2Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
750 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
Drain to Source Voltage (Vdss) |
400 V |
Vgs (Max) |
±20V |
HARRIS RFP6N45
In stock
Manufacturer |
HARRIS |
---|---|
Product Status |
Active |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Mfr |
Harris Corporation |
Package |
Bulk |
Power Dissipation (Max) |
75W (Tc) |
Mounting Type |
Through Hole |
Technology |
MOSFET (Metal Oxide) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
1.25Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds |
1500 pF @ 25 V |
Current - Continuous Drain (Id) @ 25°C |
6A (Tc) |
Drain to Source Voltage (Vdss) |
450 V |
Vgs (Max) |
±20V |
Honeywell Aerospace HTNFET-D
In stock
Manufacturer |
Honeywell Aerospace |
---|---|
Series |
HTMOS™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
8-CDIP Exposed Pad |
Supplier Device Package |
8-CDIP-EP |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Power Dissipation (Max) |
50W Tj |
Operating Temperature |
-55°C~225°C TJ |
Packaging |
Bulk |
Published |
2004 |
Factory Lead Time |
8 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id |
2.4V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
290pF @ 28V |
Gate Charge (Qg) (Max) @ Vgs |
4.3nC @ 5V |
Drain to Source Voltage (Vdss) |
55V |
Vgs (Max) |
10V |
Input Capacitance |
290pF |
Rds On Max |
400 mΩ |
RoHS Status |
Non-RoHS Compliant |
Honeywell Aerospace HTNFET-DC
In stock
Manufacturer |
Honeywell Aerospace |
---|---|
Series |
HTMOS™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
8-CDIP Exposed Pad |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Power Dissipation (Max) |
50W Tj |
Packaging |
Bulk |
Published |
2004 |
Factory Lead Time |
8 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
400m Ω @ 100mA, 5V |
Vgs(th) (Max) @ Id |
2.4V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
290pF @ 28V |
Gate Charge (Qg) (Max) @ Vgs |
4.3nC @ 5V |
Drain to Source Voltage (Vdss) |
55V |
Vgs (Max) |
10V |
RoHS Status |
RoHS Compliant |