Showing 1585–1596 of 15245 results
Infineon AUIRF3808STRR
In stock
SKU:
AUIRF3808STRR-11
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Body Material |
PLASTIC/EPOXY |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
106 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
AUIRF3808STRR |
| Moisture Sensitivity Level |
1 |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Surface Mount |
YES |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Obsolete |
| Reflow Temperature-Max (s) |
30 |
| Risk Rank |
5.14 |
| Rohs Code |
Yes |
| JESD-609 Code |
e3 |
| Operating Temperature-Max |
175 °C |
| Subcategory |
FET General Purpose Power |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| JEDEC-95 Code |
TO-263AB |
| Drain Current-Max (Abs) (ID) |
106 A |
| Drain-source On Resistance-Max |
0.007 Ω |
| Pulsed Drain Current-Max (IDM) |
550 A |
| DS Breakdown Voltage-Min |
75 V |
| Avalanche Energy Rating (Eas) |
430 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
200 W |
Infineon AUIRF6218STRR
In stock
SKU:
AUIRF6218STRR-11
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Surface Mount |
YES |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
AUIRF6218STRR |
| Operating Temperature-Max |
175 °C |
| Part Life Cycle Code |
Obsolete |
| Risk Rank |
5.12 |
| Rohs Code |
Yes |
| Subcategory |
Other Transistors |
| Reach Compliance Code |
compliant |
| Configuration |
Single |
| Polarity/Channel Type |
P-CHANNEL |
| Drain Current-Max (Abs) (ID) |
27 A |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
250 W |