Manufacturer	Infineon
Channel Mode	Enhancement
Package / Case	TDSON-8
Surface Mount	YES
Number of Terminals	5
Transistor Element Material	SILICON
Mounting Style	SMD/SMT
Brand	Infineon Technologies
Moisture Sensitivity Level	1
Operating Temperature-Max	150 °C
Continuous Drain Current Id	100
Factory Pack Quantity:Factory Pack Quantity	5000
Forward Transconductance - Min	70 S
Id - Continuous Drain Current	100 A
Ihs Manufacturer	INFINEON TECHNOLOGIES AG
Manufacturer Part Number	BSC014NE2LSI
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	– 55 C
Unit Weight	0.004174 oz
Factory Lead Time	26 Weeks
Qualification	AEC-Q101
Package Description	GREEN, PLASTIC, TDSON-8
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Part Life Cycle Code	Active
Pd - Power Dissipation	74 W
Qg - Gate Charge	52 nC
Package Body Material	PLASTIC/EPOXY
Reflow Temperature-Max (s)	NOT SPECIFIED
Rds On - Drain-Source Resistance	1.2 mOhms
Risk Rank	1.61
Rohs Code	Yes
Tradename	OptiMOS
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	5 ns
Drain Current-Max (ID)	33 A
Vds - Drain-Source Breakdown Voltage	25 V
Reach Compliance Code	compliant
Terminal Form	FLAT

Manufacturer	Infineon
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Supplier Device Package	PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Mfr	Infineon Technologies
Package	Bulk
Power Dissipation (Max)	2.5W (Ta), 30W (Tc)
Product Status	Obsolete
Mounting Type	Surface Mount
Technology	MOSFET (Metal Oxide)
Series	OptiMOS™
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 63A (Tc)
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V

Manufacturer	Infineon Technologies AG
Operating Temperature-Min	-55 °C
Number of Terminals	5
Transistor Element Material	SILICON
Continuous Drain Current Id	21
Drain Current-Max (ID)	21 A
Ihs Manufacturer	INFINEON TECHNOLOGIES AG
Manufacturer Part Number	BSC520N15NS3GXT
ECCN Code	EAR99
Operating Temperature-Max	150 °C
Package Body Material	PLASTIC/EPOXY
Package Description	SMALL OUTLINE, R-PDSO-F5
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Part Life Cycle Code	Active
Risk Rank	5.74
Rohs Code	Yes
Surface Mount	YES
Factory Lead Time	26 Weeks
Transistor Application	SWITCHING
Terminal Position	DUAL
Reach Compliance Code	compliant
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Polarity/Channel Type	N-CHANNEL
Drain-source On Resistance-Max	0.052 Ω
Type	Terminator
Pulsed Drain Current-Max (IDM)	84 A
DS Breakdown Voltage-Min	150 V
Channel Type	N
Avalanche Energy Rating (Eas)	60 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	57 W
Terminal Form	FLAT
Product Length	22.5 mm

Manufacturer	Infineon
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-SMD, No Lead
Height - Seated (Max)	0.026 (0.65mm)
Mfr	Suntsu Electronics, Inc.
Package	Bulk
Product Status	Active
Operating Temperature	-20°C ~ 70°C
Packaging	Tape & Reel (TR)
Series	SXT224
Type	MHz Crystal
Max Operating Temperature	150 °C
Min Operating Temperature	-55 °C
Max Power Dissipation	500 mW
Frequency	22.1184 MHz
Frequency Stability	±25ppm
ESR (Equivalent Series Resistance)	80 Ohms
Load Capacitance	18pF
Operating Mode	Fundamental
Frequency Tolerance	±15ppm
Drain to Source Voltage (Vdss)	30 V
Continuous Drain Current (ID)	2.3 A
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	275 pF
Rds On Max	80 mΩ
Radiation Hardening	No

Discrete Semiconductors