Showing 1633–1644 of 15245 results
Infineon BSP125L6433
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Transistor Element Material |
SILICON |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Surface Mount |
YES |
| Number of Pins |
4 |
| Supplier Device Package |
PG-SOT223-4-21 |
| Number of Terminals |
4 |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
SMALL OUTLINE, R-PDSO-G4 |
| Continuous Drain Current (ID) |
120 mA |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BSP125L6433 |
| Mfr |
Infineon Technologies |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
150 °C |
| Package |
Bulk |
| Subcategory |
FET General Purpose Power |
| Mount |
Surface Mount, Through Hole |
| Voltage Rating (DC) |
600 V |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Obsolete |
| Power Dissipation (Max) |
1.8W (Ta) |
| Product Status |
Active |
| Risk Rank |
5.62 |
| Rohs Code |
Yes |
| Package Shape |
RECTANGULAR |
| Packaging |
Tape and Reel |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
SIPMOS® |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| HTS Code |
8541.29.00.75 |
| Drain Current-Max (ID) |
0.12 A |
| Max Power Dissipation |
42 W |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
compliant |
| Current Rating |
120 mA |
| Pin Count |
4 |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Gate Charge (Qg) (Max) @ Vgs |
6.6 nC @ 10 V |
| Rise Time |
14.4 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
1.8 W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45Ohm @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 94µA |
| Input Capacitance (Ciss) (Max) @ Vds |
150 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
120mA (Ta) |
| Technology |
MOSFET (Metal Oxide) |
| Terminal Position |
DUAL |
| Drain to Source Breakdown Voltage |
600 V |
| Vgs (Max) |
±20V |
| Polarity/Channel Type |
N-CHANNEL |
| Turn-Off Delay Time |
20 ns |
| Gate to Source Voltage (Vgs) |
20 V |
| Drain Current-Max (Abs) (ID) |
0.12 A |
| Drain-source On Resistance-Max |
45 Ω |
| Drain to Source Voltage (Vdss) |
60 V |
| Input Capacitance |
420 pF |
| Pulsed Drain Current-Max (IDM) |
0.48 A |
| DS Breakdown Voltage-Min |
600 V |
| Channel Type |
N |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
1.8 W |
| Drain to Source Resistance |
45 Ω |
| Rds On Max |
300 mΩ |
| Lead Free |
Lead Free |
Infineon BSP135L6433
In stock
| Manufacturer |
Infineon |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Supplier Device Package |
PG-SOT223-4-21 |
| Drive Voltage (Max Rds On, Min Rds On) |
0V, 10V |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Power Dissipation (Max) |
1.8W (Ta) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Series |
SIPMOS® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45Ohm @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94µA |
| Input Capacitance (Ciss) (Max) @ Vds |
146 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C |
120mA (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
4.9 nC @ 5 V |
| Drain to Source Voltage (Vdss) |
600 V |
| Vgs (Max) |
±20V |
| FET Feature |
Depletion Mode |
Infineon BSR302N L6327
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Pbfree Code |
Yes |
| Surface Mount |
YES |
| Mounting Feature |
Flange |
| Shell Material |
Aluminum |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
3.7 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BSR302NL6327 |
| Mfr |
Glenair |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
150 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
SMALL OUTLINE, R-PDSO-G3 |
| Package |
Retail Package |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
SC-59 |
| Primary Material |
Metal |
| Product Status |
Active |
| Reflow Temperature-Max (s) |
40 |
| Risk Rank |
5.77 |
| Rohs Code |
Yes |
| Operating Temperature |
-65°C ~ 175°C |
| Series |
806 |
| JESD-609 Code |
e3 |
| Mounting Type |
Panel Mount, Through Hole |
| Contact Material |
Copper Alloy |
| Pin Count |
3 |
| Shell Size - Insert |
14-20A |
| Terminal Finish |
Matte Tin (Sn) |
| Color |
Olive Drab |
| HTS Code |
8541.21.00.95 |
| Fastening Type |
Threaded |
| Subcategory |
FET General Purpose Power |
| Contact Finish - Mating |
Gold |
| Terminal Position |
DUAL |
| Orientation |
A |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
compliant |
| Shell Finish |
Olive Drab Cadmium |
| ECCN Code |
EAR99 |
| Termination |
Solder |
| JESD-30 Code |
R-PDSO-G3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Drain Current-Max (Abs) (ID) |
3.7 A |
| Drain-source On Resistance-Max |
0.023 Ω |
| DS Breakdown Voltage-Min |
30 V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
0.5 W |
| Feedback Cap-Max (Crss) |
43 pF |
| Connector Type |
Receptacle, Female Sockets |
| Features |
Ground |
Infineon BSS306NH6327XT
In stock
| Manufacturer |
Infineon |
|---|---|
| Mfr |
OSRAM Opto (ams OSRAM) |
| Supplier Device Package |
5630 |
| Mounting Style |
SMD/SMT |
| Thermal Resistance of Package |
33°C/W |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Factory Pack Quantity:Factory Pack Quantity |
9000 |
| Forward Transconductance - Min |
5 S |
| Height - Seated (Max) |
0.034 (0.87mm) |
| Id - Continuous Drain Current |
2.3 A |
| Typical Turn-On Delay Time |
4.4 ns |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tape & Reel (TR) |
| Part # Aliases |
SP000928940 BSS306NH6327XTSA1 |
| Pd - Power Dissipation |
500 mW |
| Product Status |
Obsolete |
| Qg - Gate Charge |
1.5 nC |
| Qualification |
AEC-Q101 |
| Rds On - Drain-Source Resistance |
57 mOhms |
| Transistor Polarity |
N-Channel |
| Typical Turn-Off Delay Time |
8.3 ns |
| Package / Case |
4-SMD, Flat Lead Exposed Pad |
| Mounting Type |
Surface Mount |
| Viewing Angle |
120° |
| Vds - Drain-Source Breakdown Voltage |
30 V |
| Vgs th - Gate-Source Threshold Voltage |
1.6 V |
| Packaging |
MouseReel |
| Series |
DURIS® E 5 |
| Color |
White |
| Subcategory |
MOSFETs |
| Technology |
Si |
| Configuration |
Single |
| Number of Channels |
1 Channel |
| Voltage - Forward (Vf) (Typ) |
3.15V |
| Current - Test |
120mA |
| Lumens/Watt @ Current - Test |
135 lm/W |
| Unit Weight |
0.000282 oz |
| CRI (Color Rendering Index) |
80 |
| Rise Time |
2.3 ns |
| Current - Max |
180mA |
| Product Type |
MOSFET |
| Transistor Type |
1 N-Channel |
| Flux @ 25°C, Current - Test |
51lm (44lm ~ 57lm) |
| Product Category |
MOSFET |
| Height |
1.1 mm |
| Length |
2.9 mm |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Width |
1.3 mm |
Infineon BUP212
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Maximum Operating Temperature (°C) |
150 |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Automotive |
No |
| ECCN (US) |
EAR99 |
| EU RoHS |
Compliant |
| Lead Shape |
Through Hole |
| Maximum Collector-Emitter Voltage (V) |
1200 |
| Maximum Continuous Collector Current (A) |
22 |
| Maximum Gate Emitter Leakage Current (uA) |
0.12 |
| Supplier Package |
TO-220AB |
| Surface Mount |
NO |
| Maximum Power Dissipation (mW) |
125000 |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Through Hole |
| Package Height |
9.25 |
| Package Length |
10 |
| Package Shape |
RECTANGULAR |
| Package Width |
4.4 |
| PCB changed |
3 |
| PPAP |
No |
| Standard Package Name |
TO-220 |
| Maximum Gate Emitter Voltage (V) |
±20 |
| Tab |
Tab |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Part Status |
Obsolete |
| Terminal Finish |
MATTE TIN |
| Subcategory |
Insulated Gate BIP Transistors |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Typical Collector Emitter Saturation Voltage (V) |
3.4 |
| JESD-609 Code |
e3 |
| Configuration |
Single |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-220AB |
| Channel Type |
N |
| Power Dissipation-Max (Abs) |
125 W |
| Collector Current-Max (IC) |
22 A |
| Collector-Emitter Voltage-Max |
1200 V |
| Gate-Emitter Voltage-Max |
20 V |
| Gate-Emitter Thr Voltage-Max |
6.5 V |
| Fall Time-Max (tf) |
120 ns |
Infineon BUP213E3045A
In stock
| Manufacturer |
Infineon |
|---|---|
| Automotive |
No |
| ECCN (US) |
EAR99 |
| EU RoHS |
Not Compliant |
| Maximum Collector-Emitter Voltage (V) |
1200 |
| Maximum Continuous Collector Current (A) |
32 |
| Maximum Gate Emitter Leakage Current (uA) |
0.1 |
| Maximum Gate Emitter Voltage (V) |
±20 |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
200 |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Surface Mount |
| PCB changed |
2 |
| PPAP |
No |
| Standard Package Name |
TO-263 |
| Supplier Package |
D2PAK |
| Tab |
Tab |
| Typical Collector Emitter Saturation Voltage (V) |
3.4 |
| Packaging |
Tape and Reel |
| Part Status |
Unconfirmed |
| Pin Count |
3 |
| Configuration |
Single |
| Channel Type |
N |
Infineon BUZ73ALH
In stock
| Manufacturer |
Eurotherm |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
5.5 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BUZ73ALH |
| Operating Temperature-Max |
150 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
GREEN, PLASTIC, TO-220, 3 PIN |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Package Code |
TO-220AB |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Part Life Cycle Code |
Obsolete |
| Risk Rank |
5.25 |
| Rohs Code |
Yes |
| Turn-On Delay Time |
15 ns |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
FET General Purpose Power |
| Max Power Dissipation |
40 W |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Number of Pins |
3 |
| Surface Mount |
NO |
| Continuous Drain Current (ID) |
5.5 A |
| JEDEC-95 Code |
TO-220AB |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40 W |
| Halogen Free |
Halogen Free |
| Rise Time |
60 ns |
| Drain to Source Voltage (Vdss) |
200 V |
| Polarity/Channel Type |
N-CHANNEL |
| Turn-Off Delay Time |
100 ns |
| Pin Count |
3 |
| Reach Compliance Code |
compliant |
| Gate to Source Voltage (Vgs) |
20 V |
| Drain-source On Resistance-Max |
0.6 Ω |
| Drain to Source Breakdown Voltage |
200 V |
| Pulsed Drain Current-Max (IDM) |
22 A |
| Input Capacitance |
840 pF |
| DS Breakdown Voltage-Min |
200 V |
| Avalanche Energy Rating (Eas) |
120 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
40 W |
| Drain to Source Resistance |
600 mΩ |
| Rds On Max |
600 mΩ |
| JESD-30 Code |
R-PSFM-T3 |
| Radiation Hardening |
No |
Infineon BYM300B170DN2
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package |
Bulk |
| Surface Mount |
NO |
| Mounting Feature |
Bulkhead – Front Side Nut |
| Contact Shape |
Circular |
| Shell Material |
Composite |
| Insert Material |
Thermoplastic |
| Diode Element Material |
SILICON |
| Number of Terminals |
3 |
| Base Product Number |
CTV07RF |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
BYM300B170DN2 |
| Mfr |
Amphenol Aerospace Operations |
| Pbfree Code |
Yes |
| Mounting Type |
Panel Mount |
| Package Body Material |
UNSPECIFIED |
| Package Description |
R-XUFM-X3 |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Not Recommended |
| Part Package Code |
MODULE |
| Product Status |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.62 |
| Rohs Code |
Yes |
| Operating Temperature |
-65°C ~ 175°C |
| Operating Temperature-Max |
150 °C |
| ECCN Code |
EAR99 |
| Shell Finish |
Electroless Nickel |
| Pin Count |
3 |
| Number of Positions |
151 |
| HTS Code |
8541.10.00.80 |
| Fastening Type |
Threaded |
| Contact Type |
Crimp |
| Terminal Position |
UPPER |
| Orientation |
B |
| Terminal Form |
UNSPECIFIED |
| Shielding |
Shielded |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Ingress Protection |
Environment Resistant |
| Reach Compliance Code |
compliant |
| Connector Type |
Receptacle Housing |
| Type |
For Female Sockets |
| Shell Size - Insert |
23-151 |
| JESD-30 Code |
R-XUFM-X3 |
| Qualification Status |
Not Qualified |
| Housing Color |
Silver |
| Number of Elements |
2 |
| Note |
Contacts Not Included |
| Contact Size |
23 |
| Diode Type |
RECTIFIER DIODE |
| Case Connection |
ISOLATED |
| Output Current-Max |
300 A |
| Application |
GENERAL PURPOSE |
| Number of Phases |
1 |
Infineon DDB6U30N08VR
In stock
| Manufacturer |
Infineon |
|---|---|
| Max Operating Temperature |
125°C |
| JESD-30 Code |
R-XUFM-X9 |
| Pin Count |
9 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
UNSPECIFIED |
| Terminal Position |
UPPER |
| Qualification Status |
Not Qualified |
| Min Operating Temperature |
-40°C |
| ECCN Code |
EAR99 |
| Number of Terminations |
9 |
| Pbfree Code |
no |
| Number of Elements |
1 |
| Number of Pins |
750 |
| Package / Case |
Module |
| Mount |
Screw |
| Case Connection |
ISOLATED |
| Turn Off Time-Nom (toff) |
145 ns |
| RoHS Status |
RoHS Compliant |
| Width |
25.4mm |
| Length |
35.6mm |
| Height |
12mm |
| VCEsat-Max |
2.55 V |
| Gate-Emitter Voltage-Max |
20V |
| Turn On Time |
38 ns |
| Element Configuration |
Single |
| Power Dissipation-Max (Abs) |
83.5W |
| Max Repetitive Reverse Voltage (Vrrm) |
800V |
| Max Collector Current |
26A |
| Collector Emitter Voltage (VCEO) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Halogen Free |
Not Halogen Free |
| Lead Free |
Contains Lead |
Infineon DDB6U84N16RR
In stock
| Manufacturer |
Infineon |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
Module |
| Number of Pins |
6 |
| Number of Elements |
1 |
| Packaging |
Bulk |
| Pbfree Code |
no |
| Number of Terminations |
17 |
| ECCN Code |
EAR99 |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Screw |
| JESD-30 Code |
R-XUFM-X17 |
| Pin Count |
17 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Current - Output |
85A |
| Case Connection |
ISOLATED |
| Halogen Free |
Not Halogen Free |
| Forward Voltage |
1.55V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
50A |
| Max Repetitive Reverse Voltage (Vrrm) |
1.6kV |
| Reverse Voltage (DC) |
1.6kV |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |