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Series
Discrete Semiconductors
Infineon FZ2400R17KE3
In stock
Manufacturer |
Infineon |
---|---|
Surface Mount |
NO |
Number of Terminals |
7 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
EUPEC GMBH & CO KG |
Manufacturer Part Number |
FZ2400R17KE3 |
Package Body Material |
UNSPECIFIED |
Package Description |
MODULE-7 |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Transferred |
Risk Rank |
8.2 |
Turn-off Time-Nom (toff) |
1890 ns |
Turn-on Time-Nom (ton) |
850 ns |
Type |
Single |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Reach Compliance Code |
unknown |
JESD-30 Code |
R-XUFM-X7 |
Qualification Status |
Not Qualified |
Number of Elements |
2 |
Configuration |
COMPLEX |
Case Connection |
ISOLATED |
Polarity/Channel Type |
N-CHANNEL |
Collector Current-Max (IC) |
3200 A |
Collector-Emitter Voltage-Max |
1700 V |
Height (mm) |
38 mm |
Infineon FZ3600R12KE3
In stock
Manufacturer |
Infineon |
---|---|
Pbfree Code |
No |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Manufacturer Part Number |
FZ3600R12KE3 |
Moisture Sensitivity Level |
1 |
Operating Temperature-Max |
150 °C |
Package Body Material |
UNSPECIFIED |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Package Description |
MODULE-9 |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MODULE |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.61 |
Rohs Code |
No |
Turn-off Time-Nom (toff) |
1140 ns |
Turn-on Time-Nom (ton) |
880 ns |
Number of Terminals |
9 |
Surface Mount |
NO |
Number of Elements |
3 |
Configuration |
COMPLEX |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Pin Count |
9 |
JESD-30 Code |
R-XUFM-X9 |
Qualification Status |
Not Qualified |
Type |
Single |
ECCN Code |
EAR99 |
Case Connection |
ISOLATED |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
14800 W |
Collector Current-Max (IC) |
4700 A |
Collector-Emitter Voltage-Max |
1200 V |
Gate-Emitter Voltage-Max |
20 V |
VCEsat-Max |
2.15 V |
Subcategory |
Insulated Gate BIP Transistors |
Height (mm) |
38 mm |
Infineon FZ3600R17HP4B2BOSA1
In stock
Manufacturer |
Infineon |
---|---|
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant with Exemption |
Maximum Collector-Emitter Voltage (V) |
1700 |
Maximum Continuous Collector Current (A) |
3600 |
Maximum Gate Emitter Leakage Current (uA) |
0.4 |
Maximum Gate Emitter Voltage (V) |
±20 |
Maximum Operating Temperature (°C) |
150 |
Maximum Power Dissipation (mW) |
21000 |
Minimum Operating Temperature (°C) |
-40 |
Mounting |
Screw |
Package Length |
190 |
Package Width |
140 |
PCB changed |
9 |
PPAP |
No |
Supplier Package |
AG-IHMB190-2 |
Typical Collector Emitter Saturation Voltage (V) |
1.9 |
Packaging |
Tray |
Part Status |
Unconfirmed |
Pin Count |
9 |
Configuration |
Triple |
Channel Type |
N |
Infineon FZ3600R17KE3_B2
In stock
Manufacturer |
Infineon |
---|---|
Pbfree Code |
No |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Manufacturer Part Number |
FZ3600R17KE3_B2 |
Moisture Sensitivity Level |
1 |
Operating Temperature-Max |
150 °C |
Package Body Material |
UNSPECIFIED |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Package Description |
FLANGE MOUNT, R-XUFM-X9 |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MODULE |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.55 |
Rohs Code |
Yes |
Turn-off Time-Nom (toff) |
2100 ns |
Turn-on Time-Nom (ton) |
1050 ns |
Number of Terminals |
9 |
Surface Mount |
NO |
Number of Elements |
3 |
Case Connection |
ISOLATED |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
9 |
JESD-30 Code |
R-XUFM-X9 |
Qualification Status |
Not Qualified |
Type |
Single |
ECCN Code |
EAR99 |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Power Dissipation-Max (Abs) |
20000 W |
Collector Current-Max (IC) |
4800 A |
Collector-Emitter Voltage-Max |
1700 V |
Gate-Emitter Voltage-Max |
20 V |
VCEsat-Max |
2.45 V |
Subcategory |
Insulated Gate BIP Transistors |
Height (mm) |
38 mm |
Infineon FZ600R12KE3B1HOSA1
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Surface Mount |
NO |
Number of Terminals |
5 |
Transistor Element Material |
SILICON |
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant |
Maximum Collector-Emitter Voltage (V) |
1200 |
Maximum Continuous Collector Current (A) |
900 |
Maximum Gate Emitter Leakage Current (uA) |
0.4 |
Maximum Gate Emitter Voltage (V) |
±20 |
Maximum Operating Temperature (°C) |
125 |
Maximum Power Dissipation (mW) |
2800 |
Minimum Operating Temperature (°C) |
-40 |
Package Shape |
RECTANGULAR |
PPAP |
No |
Typical Collector Emitter Saturation Voltage (V) |
1.7 |
Pbfree Code |
Yes |
Part Status |
Obsolete |
Terminal Position |
UPPER |
Terminal Form |
UNSPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
5 |
JESD-30 Code |
R-XUFM-X5 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Configuration |
Single |
Case Connection |
ISOLATED |
Polarity/Channel Type |
N-CHANNEL |
Channel Type |
N |
Collector Current-Max (IC) |
900 A |
Collector-Emitter Voltage-Max |
1200 V |
Infineon G450HHBK06P2H
In stock
Manufacturer |
Infineon |
---|---|
ECCN (US) |
EAR99 |
Maximum Collector-Emitter Voltage (V) |
600 |
Maximum Continuous Collector Current (A) |
600 |
Maximum Gate Emitter Leakage Current (uA) |
10 |
Maximum Gate Emitter Voltage (V) |
±20 |
Maximum Operating Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Mounting |
Screw |
Package Length |
101.6 |
Package Width |
63.5 |
PCB changed |
8 |
Supplier Package |
INT-A-PAK 2 |
Typical Collector Emitter Saturation Voltage (V) |
1.8 |
Pin Count |
8 |
Configuration |
Dual |
Channel Type |
N |
Infineon IAUC120N06S5L022ATMA1
In stock
Manufacturer |
Infineon |
---|---|
Operating Temperature |
-55°C ~ 175°C (TJ) |
Package / Case |
8-PowerTDFN |
Supplier Device Package |
PG-TDSON-8-34 |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Mfr |
Infineon Technologies |
Package |
Tape & Reel (TR) |
Power Dissipation (Max) |
136W (Tc) |
Product Status |
Active |
Mounting Type |
Surface Mount |
Technology |
MOSFET (Metal Oxide) |
Series |
OptiMOS™-5 |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
2.2mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 65µA |
Input Capacitance (Ciss) (Max) @ Vds |
5651 pF @ 30 V |
Current - Continuous Drain (Id) @ 25°C |
170A (Tj) |
Gate Charge (Qg) (Max) @ Vgs |
77 nC @ 10 V |
Drain to Source Voltage (Vdss) |
60 V |
Vgs (Max) |
±20V |
Infineon IGA30N60H3
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Package Description |
FLANGE MOUNT, R-PSFM-T3 |
Rohs Code |
Yes |
Risk Rank |
5.82 |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Part Package Code |
TO-220AB |
Part Life Cycle Code |
Obsolete |
Package Style |
FLANGE MOUNT |
Turn-off Time-Nom (toff) |
262 ns |
Package Shape |
RECTANGULAR |
Package Body Material |
PLASTIC/EPOXY |
Operating Temperature-Max |
175 °C |
Manufacturer Part Number |
IGA30N60H3 |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Transistor Element Material |
SILICON |
Number of Terminals |
3 |
Surface Mount |
NO |
Pbfree Code |
Yes |
Number of Elements |
1 |
Collector Current-Max (IC) |
18 A |
JEDEC-95 Code |
TO-220AB |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
Case Connection |
ISOLATED |
Configuration |
SINGLE |
Qualification Status |
Not Qualified |
Turn-on Time-Nom (ton) |
40 ns |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
3 |
Reach Compliance Code |
compliant |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Terminal Form |
THROUGH-HOLE |
Terminal Position |
SINGLE |
Collector-Emitter Voltage-Max |
600 V |
Infineon IGB10N60TXT
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Operating Temperature-Max |
175 °C |
Risk Rank |
5.72 |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Part Life Cycle Code |
Active |
Package Style |
SMALL OUTLINE |
Package Shape |
RECTANGULAR |
Package Description |
SMALL OUTLINE, R-PSSO-G2 |
Rohs Code |
Yes |
Package Body Material |
PLASTIC/EPOXY |
Manufacturer Part Number |
IGB10N60TXT |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Transistor Element Material |
SILICON |
Number of Terminals |
2 |
Number of Pins |
3 |
Surface Mount |
YES |
Factory Lead Time |
20 Weeks |
Turn-on Time-Nom (ton) |
21 ns |
Configuration |
SINGLE |
Continuous Collector Current |
20 |
Collector Current-Max (IC) |
20 A |
JEDEC-95 Code |
TO-263AB |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
Case Connection |
COLLECTOR |
Number of Elements |
1 |
Turn-off Time-Nom (toff) |
296 ns |
JESD-30 Code |
R-PSSO-G2 |
Reach Compliance Code |
compliant |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Terminal Form |
GULL WING |
Terminal Position |
SINGLE |
ECCN Code |
EAR99 |
Collector-Emitter Voltage-Max |
600 V |