Showing 1729–1740 of 15245 results

Discrete Semiconductors

Infineon FZ2400R17KE3

In stock

SKU: FZ2400R17KE3-9
Manufacturer

Infineon

Surface Mount

NO

Number of Terminals

7

Transistor Element Material

SILICON

Ihs Manufacturer

EUPEC GMBH & CO KG

Manufacturer Part Number

FZ2400R17KE3

Package Body Material

UNSPECIFIED

Package Description

MODULE-7

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Part Life Cycle Code

Transferred

Risk Rank

8.2

Turn-off Time-Nom (toff)

1890 ns

Turn-on Time-Nom (ton)

850 ns

Type

Single

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Reach Compliance Code

unknown

JESD-30 Code

R-XUFM-X7

Qualification Status

Not Qualified

Number of Elements

2

Configuration

COMPLEX

Case Connection

ISOLATED

Polarity/Channel Type

N-CHANNEL

Collector Current-Max (IC)

3200 A

Collector-Emitter Voltage-Max

1700 V

Height (mm)

38 mm

Infineon FZ3600R12KE3

In stock

SKU: FZ3600R12KE3-9
Manufacturer

Infineon

Pbfree Code

No

Transistor Element Material

SILICON

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Manufacturer Part Number

FZ3600R12KE3

Moisture Sensitivity Level

1

Operating Temperature-Max

150 °C

Package Body Material

UNSPECIFIED

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Package Description

MODULE-9

Part Life Cycle Code

Obsolete

Part Package Code

MODULE

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

5.61

Rohs Code

No

Turn-off Time-Nom (toff)

1140 ns

Turn-on Time-Nom (ton)

880 ns

Number of Terminals

9

Surface Mount

NO

Number of Elements

3

Configuration

COMPLEX

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

9

JESD-30 Code

R-XUFM-X9

Qualification Status

Not Qualified

Type

Single

ECCN Code

EAR99

Case Connection

ISOLATED

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

14800 W

Collector Current-Max (IC)

4700 A

Collector-Emitter Voltage-Max

1200 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.15 V

Subcategory

Insulated Gate BIP Transistors

Height (mm)

38 mm

Infineon FZ3600R17HP4B2BOSA1

In stock

SKU: FZ3600R17HP4B2BOSA1-9
Manufacturer

Infineon

Automotive

No

ECCN (US)

EAR99

EU RoHS

Compliant with Exemption

Maximum Collector-Emitter Voltage (V)

1700

Maximum Continuous Collector Current (A)

3600

Maximum Gate Emitter Leakage Current (uA)

0.4

Maximum Gate Emitter Voltage (V)

±20

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

21000

Minimum Operating Temperature (°C)

-40

Mounting

Screw

Package Length

190

Package Width

140

PCB changed

9

PPAP

No

Supplier Package

AG-IHMB190-2

Typical Collector Emitter Saturation Voltage (V)

1.9

Packaging

Tray

Part Status

Unconfirmed

Pin Count

9

Configuration

Triple

Channel Type

N

Infineon FZ3600R17KE3_B2

In stock

SKU: FZ3600R17KE3_B2-9
Manufacturer

Infineon

Pbfree Code

No

Transistor Element Material

SILICON

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Manufacturer Part Number

FZ3600R17KE3_B2

Moisture Sensitivity Level

1

Operating Temperature-Max

150 °C

Package Body Material

UNSPECIFIED

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Package Description

FLANGE MOUNT, R-XUFM-X9

Part Life Cycle Code

Obsolete

Part Package Code

MODULE

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

5.55

Rohs Code

Yes

Turn-off Time-Nom (toff)

2100 ns

Turn-on Time-Nom (ton)

1050 ns

Number of Terminals

9

Surface Mount

NO

Number of Elements

3

Case Connection

ISOLATED

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

9

JESD-30 Code

R-XUFM-X9

Qualification Status

Not Qualified

Type

Single

ECCN Code

EAR99

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

20000 W

Collector Current-Max (IC)

4800 A

Collector-Emitter Voltage-Max

1700 V

Gate-Emitter Voltage-Max

20 V

VCEsat-Max

2.45 V

Subcategory

Insulated Gate BIP Transistors

Height (mm)

38 mm

Infineon FZ600R12KE3B1HOSA1

In stock

SKU: FZ600R12KE3B1HOSA1-9
Manufacturer

Infineon Technologies AG

Surface Mount

NO

Number of Terminals

5

Transistor Element Material

SILICON

Automotive

No

ECCN (US)

EAR99

EU RoHS

Compliant

Maximum Collector-Emitter Voltage (V)

1200

Maximum Continuous Collector Current (A)

900

Maximum Gate Emitter Leakage Current (uA)

0.4

Maximum Gate Emitter Voltage (V)

±20

Maximum Operating Temperature (°C)

125

Maximum Power Dissipation (mW)

2800

Minimum Operating Temperature (°C)

-40

Package Shape

RECTANGULAR

PPAP

No

Typical Collector Emitter Saturation Voltage (V)

1.7

Pbfree Code

Yes

Part Status

Obsolete

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pin Count

5

JESD-30 Code

R-XUFM-X5

Qualification Status

Not Qualified

Number of Elements

1

Configuration

Single

Case Connection

ISOLATED

Polarity/Channel Type

N-CHANNEL

Channel Type

N

Collector Current-Max (IC)

900 A

Collector-Emitter Voltage-Max

1200 V

Infineon FZ800R16KF4S1NOSA1

In stock

SKU: FZ800R16KF4S1NOSA1-9
Manufacturer

Infineon

Automotive

Unknown

EU RoHS

Not Compliant

PPAP

Unknown

Part Status

Obsolete

Infineon G450HHBK06P2H

In stock

SKU: G450HHBK06P2H-9
Manufacturer

Infineon

ECCN (US)

EAR99

Maximum Collector-Emitter Voltage (V)

600

Maximum Continuous Collector Current (A)

600

Maximum Gate Emitter Leakage Current (uA)

10

Maximum Gate Emitter Voltage (V)

±20

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Mounting

Screw

Package Length

101.6

Package Width

63.5

PCB changed

8

Supplier Package

INT-A-PAK 2

Typical Collector Emitter Saturation Voltage (V)

1.8

Pin Count

8

Configuration

Dual

Channel Type

N

Infineon IAUC120N06S5L022ATMA1

In stock

SKU: IAUC120N06S5L022ATMA1-11
Manufacturer

Infineon

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

8-PowerTDFN

Supplier Device Package

PG-TDSON-8-34

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mfr

Infineon Technologies

Package

Tape & Reel (TR)

Power Dissipation (Max)

136W (Tc)

Product Status

Active

Mounting Type

Surface Mount

Technology

MOSFET (Metal Oxide)

Series

OptiMOS™-5

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2.2mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2.2V @ 65µA

Input Capacitance (Ciss) (Max) @ Vds

5651 pF @ 30 V

Current - Continuous Drain (Id) @ 25°C

170A (Tj)

Gate Charge (Qg) (Max) @ Vgs

77 nC @ 10 V

Drain to Source Voltage (Vdss)

60 V

Vgs (Max)

±20V

Infineon IAUTN06S5N008ATMA1

In stock

SKU: IAUTN06S5N008ATMA1-11
Manufacturer

Infineon

Mfr

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

Active

Infineon IFS150B12N3T4B31BOSA1

In stock

SKU: IFS150B12N3T4B31BOSA1-9
Manufacturer

Infineon

Automotive

No

EU RoHS

Compliant with Exemption

Mounting

Screw

Package Height

17

Package Length

122

Package Width

62

PCB changed

41

PPAP

No

Supplier Package

ECONO3-4

Part Status

Obsolete

Pin Count

41

Infineon IGA30N60H3

In stock

SKU: IGA30N60H3-9
Manufacturer

Infineon Technologies AG

Package Description

FLANGE MOUNT, R-PSFM-T3

Rohs Code

Yes

Risk Rank

5.82

Reflow Temperature-Max (s)

NOT SPECIFIED

Part Package Code

TO-220AB

Part Life Cycle Code

Obsolete

Package Style

FLANGE MOUNT

Turn-off Time-Nom (toff)

262 ns

Package Shape

RECTANGULAR

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Max

175 °C

Manufacturer Part Number

IGA30N60H3

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Transistor Element Material

SILICON

Number of Terminals

3

Surface Mount

NO

Pbfree Code

Yes

Number of Elements

1

Collector Current-Max (IC)

18 A

JEDEC-95 Code

TO-220AB

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Case Connection

ISOLATED

Configuration

SINGLE

Qualification Status

Not Qualified

Turn-on Time-Nom (ton)

40 ns

JESD-30 Code

R-PSFM-T3

Pin Count

3

Reach Compliance Code

compliant

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Collector-Emitter Voltage-Max

600 V

Infineon IGB10N60TXT

In stock

SKU: IGB10N60TXT-9
Manufacturer

Infineon Technologies AG

Operating Temperature-Max

175 °C

Risk Rank

5.72

Reflow Temperature-Max (s)

NOT SPECIFIED

Part Life Cycle Code

Active

Package Style

SMALL OUTLINE

Package Shape

RECTANGULAR

Package Description

SMALL OUTLINE, R-PSSO-G2

Rohs Code

Yes

Package Body Material

PLASTIC/EPOXY

Manufacturer Part Number

IGB10N60TXT

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Transistor Element Material

SILICON

Number of Terminals

2

Number of Pins

3

Surface Mount

YES

Factory Lead Time

20 Weeks

Turn-on Time-Nom (ton)

21 ns

Configuration

SINGLE

Continuous Collector Current

20

Collector Current-Max (IC)

20 A

JEDEC-95 Code

TO-263AB

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Case Connection

COLLECTOR

Number of Elements

1

Turn-off Time-Nom (toff)

296 ns

JESD-30 Code

R-PSSO-G2

Reach Compliance Code

compliant

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Terminal Form

GULL WING

Terminal Position

SINGLE

ECCN Code

EAR99

Collector-Emitter Voltage-Max

600 V