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Discrete Semiconductors
Infineon IGC99T120T8RMX1SA1
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Maximum Gate Emitter Voltage (V) |
±20 |
Number of Terminals |
5 |
Transistor Element Material |
SILICON |
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant |
Maximum Collector-Emitter Voltage (V) |
1200 |
PPAP |
No |
Maximum Gate Emitter Leakage Current (uA) |
0.12 |
Maximum Operating Temperature (°C) |
175 |
Minimum Operating Temperature (°C) |
-40 |
Package Height |
0.12 |
Package Length |
10.39 |
Package Shape |
RECTANGULAR |
Package Width |
9.5 |
PCB changed |
3 |
Surface Mount |
YES |
Factory Lead Time |
13 Weeks |
Pin Count |
3 |
Typical Collector Emitter Saturation Voltage (V) |
1.75 |
Part Status |
Active |
ECCN Code |
EAR99 |
Terminal Position |
UPPER |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
JESD-30 Code |
R-XUUC-N5 |
Number of Elements |
1 |
Supplier Package |
Die |
Configuration |
Single |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Saturation Voltage |
2.05 |
Channel Type |
N |
Continuous Collector Current |
100 |
Packaging |
Wafer |
Collector-Emitter Voltage-Max |
1200 V |
Infineon IGCM06B60GA
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Surface Mount |
NO |
Number of Terminals |
24 |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Manufacturer Part Number |
IGCM06B60GA |
Operating Temperature-Max |
100 °C |
Operating Temperature-Min |
-40 °C |
Package Body Material |
PLASTIC/EPOXY |
Package Description |
DIP-24 |
Package Shape |
RECTANGULAR |
Package Style |
MICROELECTRONIC ASSEMBLY |
Part Life Cycle Code |
Obsolete |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
Supply Voltage-Nom (Vsup) |
16 V |
HTS Code |
8542.39.00.01 |
Terminal Position |
DUAL |
Terminal Form |
THROUGH-HOLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Number of Functions |
1 |
Reach Compliance Code |
compliant |
JESD-30 Code |
R-PDMA-T24 |
Supply Voltage-Max (Vsup) |
18.5 V |
Temperature Grade |
INDUSTRIAL |
Supply Voltage-Min (Vsup) |
14 V |
Analog IC - Other Type |
AC MOTOR CONTROLLER |
Output Current-Max |
12 A |
Seated Height-Max |
5.6 mm |
Length |
36 mm |
Width |
21 mm |
Infineon IGD06N60TXT
In stock
Manufacturer |
Infineon |
---|---|
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant |
Maximum Collector-Emitter Voltage (V) |
600 |
Maximum Continuous Collector Current (A) |
12 |
Maximum Gate Emitter Leakage Current (uA) |
0.1 |
Maximum Gate Emitter Voltage (V) |
±20 |
Maximum Operating Temperature (°C) |
175 |
Maximum Power Dissipation (mW) |
88 |
Minimum Operating Temperature (°C) |
-40 |
Mounting |
Surface Mount |
Package Height |
2.3 |
Package Length |
6.5 |
Package Width |
6.22 |
PCB changed |
2 |
PPAP |
No |
Standard Package Name |
TO-252 |
Supplier Package |
DPAK |
Tab |
Tab |
Typical Collector Emitter Saturation Voltage (V) |
1.5 |
Part Status |
Unconfirmed |
Pin Count |
3 |
Configuration |
Single |
Channel Type |
N |
Infineon IGO60R070D1AUMA2
In stock
Manufacturer |
Infineon |
---|---|
Package / Case |
PG-DSO-20 |
Mounting Style |
SMD/SMT |
Channel Mode |
Enhancement |
Continuous Drain Current Id |
31A |
Id - Continuous Drain Current |
31 A |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
125 W |
Qg - Gate Charge |
5.8 nC |
Rds On - Drain-Source Resistance |
70 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
800 V |
Vgs - Gate-Source Voltage |
– 10 V, + 10 V |
Vgs th - Gate-Source Threshold Voltage |
900 mV |
Series |
CoolGaN 600V |
Technology |
GaN |
Number of Channels |
1 Channel |
Channel Type |
N |
Infineon IGP10N60TATMA1
In stock
Manufacturer |
Infineon |
---|---|
Function |
Amplitude Control |
Package / Case |
4-SMD, No Lead |
Supplier Device Package |
PG-TO220-3-1 |
Height - Seated (Max) |
0.102 (2.60mm) |
Package |
Strip |
Product Status |
Active |
Operating Temperature |
-40°C ~ 85°C |
Series |
QuikXO |
Type |
VCTCXO |
Voltage - Supply |
3.3V |
Frequency |
16.392658 MHz |
Frequency Stability |
±1ppm |
Output |
CMOS |
Mounting Type |
Surface Mount |
Current - Supply (Max) |
24mA (Typ) |
Base Resonator |
Crystal |
Current - Supply (Disable) (Max) |
18mA (Typ) |
Input Type |
Standard |
Power - Max |
110 W |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
24 A |
Absolute Pull Range (APR) |
±8ppm |
Test Condition |
400V, 10A, 23Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 10A |
IGBT Type |
NPT, Trench Field Stop |
Gate Charge |
62 nC |
Current - Collector Pulsed (Icm) |
30 A |
Td (on/off) @ 25°C |
12ns/215ns |
Switching Energy |
160µJ (on), 270µJ (off) |
Infineon IGQ120N120S7XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Package / Case |
TO-247-3 |
Mounting Style |
Through Hole |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
1.2 kV |
Factory Pack Quantity:Factory Pack Quantity |
240 |
Maximum Gate Emitter Voltage |
– 20 V, 20 V |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Package |
Tube |
Pd - Power Dissipation |
1004 W |
Product Status |
Active |
Packaging |
Tube |
Technology |
Si |
Configuration |
Single |
Product Category |
Infineon |
Infineon IGQ75N120S7XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Mfr |
Glenair |
Mounting Style |
Through Hole |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
1.2 kV |
Factory Pack Quantity:Factory Pack Quantity |
240 |
Maximum Gate Emitter Voltage |
– 20 V, 20 V |
Maximum Operating Temperature |
+ 175 C |
Package / Case |
TO-247-3 |
Package |
Retail Package |
Minimum Operating Temperature |
– 40 C |
Pd - Power Dissipation |
630 W |
Product Status |
Active |
Packaging |
Tube |
Series |
* |
Technology |
Si |
Configuration |
Single |
Product Category |
Infineon |
Infineon IGW08T120XK
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Factory Lead Time |
20 Weeks |
Surface Mount |
NO |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Manufacturer Part Number |
IGW08T120XK |
Operating Temperature-Max |
150 °C |
Package Body Material |
PLASTIC/EPOXY |
Package Description |
FLANGE MOUNT, R-PSFM-T3 |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Active |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.73 |
Rohs Code |
Yes |
Turn-off Time-Nom (toff) |
710 ns |
Turn-on Time-Nom (ton) |
66 ns |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
JESD-30 Code |
R-PSFM-T3 |
Number of Elements |
1 |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-247AD |
Collector Current-Max (IC) |
16 A |
Continuous Collector Current |
16 |
Collector-Emitter Voltage-Max |
1200 V |
Infineon IGW15T120XK
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Tolerance |
±5% |
Package / Case |
Rectangular Box |
Surface Mount |
NO |
Dielectric Material |
Polypropylene (PP), Metallized |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Lead Free Status / RoHS Status |
— |
Manufacturer Part Number |
IGW15T120XK |
Operating Temperature-Max |
150 °C |
Package Description |
FLANGE MOUNT, R-PSFM-T3 |
Package Shape |
RECTANGULAR |
Package Body Material |
PLASTIC/EPOXY |
Package Style |
FLANGE MOUNT |
Part Life Cycle Code |
Active |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.73 |
Rohs Code |
Yes |
Turn-off Time-Nom (toff) |
720 ns |
Turn-on Time-Nom (ton) |
85 ns |
Operating Temperature |
-55°C ~ 105°C |
Packaging |
Bulk |
Series |
MKP386M |
Mounting Type |
Chassis Mount |
Factory Lead Time |
20 Weeks |
Lead Spacing |
0.886 (22.50mm) |
Configuration |
SINGLE |
ECCN Code |
EAR99 |
Applications |
Snubber |
Capacitance |
0.068µF |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
JESD-30 Code |
R-PSFM-T3 |
Number of Elements |
1 |
ESR (Equivalent Series Resistance) |
14 mOhms |
Moisture Sensitivity Level (MSL) |
— |
Part Status |
Active |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-247AD |
Collector Current-Max (IC) |
30 A |
Continuous Collector Current |
30 |
Collector-Emitter Voltage-Max |
1200 V |
Voltage Rating - DC |
2500V (2.5kV) |
Features |
Low ESR |
Voltage Rating - AC |
800V |
Termination |
Screw Terminals |
Ratings |
— |
Infineon IGW30N100T
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Surface Mount |
NO |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Mounting Style |
Through Hole |
Brand |
Infineon Technologies |
Collector Current (DC) |
60(A) |
Collector- Emitter Voltage VCEO Max |
1 kV |
Collector-Emitter Voltage |
1000(V) |
Continuous Collector Current Ic Max |
30 A |
Factory Pack Quantity:Factory Pack Quantity |
240 |
Gate to Emitter Voltage (Max) |
±20(V) |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Manufacturer Part Number |
IGW30N100T |
Risk Rank |
8.57 |
Package / Case |
TO-247-3 |
Minimum Operating Temperature |
– 55 C |
Mounting |
Through Hole |
Operating Temperature Classification |
Military |
Operating Temperature (Max) |
175C |
Package Body Material |
PLASTIC/EPOXY |
Package Description |
FLANGE MOUNT, R-PSFM-T3 |
Package Shape |
RECTANGULAR |
Package Style |
FLANGE MOUNT |
Package Type |
TO-247 |
Part Life Cycle Code |
Obsolete |
Part Package Code |
TO-247AD |
Pd - Power Dissipation |
412 W |
Rad Hardened |
No |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Rohs Code |
Yes |
Pin Count |
3 +Tab |
JESD-30 Code |
R-PSFM-T3 |
Turn-off Time-Nom (toff) |
569 ns |
Turn-on Time-Nom (ton) |
54 ns |
Unit Weight |
0.211644 oz |
Packaging |
Rail/Tube |
Series |
TRENCHSTOP IGBT |
Pbfree Code |
Yes |
ECCN Code |
EAR99 |
Subcategory |
IGBTs |
Technology |
Si |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Samacsys Description |
IGBT 1000V, 60A,TO-247-3 |
Tradename |
TRENCHSTOP |
Qualification Status |
Not Qualified |
Operating Temperature (Min) |
-55C |
Number of Elements |
1 |
Configuration |
Single |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Product Type |
IGBT Transistors |
JEDEC-95 Code |
TO-247AD |
Channel Type |
N |
Power Dissipation-Max (Abs) |
412 W |
Collector Current-Max (IC) |
60 A |
Collector-Emitter Voltage-Max |
1000 V |
Gate-Emitter Voltage-Max |
20 V |
Gate-Emitter Thr Voltage-Max |
6.4 V |
Product Category |
IGBT Transistors |
Infineon IGW30N60TXK
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Package Body Material |
PLASTIC/EPOXY |
Rohs Code |
Yes |
Risk Rank |
5.73 |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Part Life Cycle Code |
Active |
Package Style |
FLANGE MOUNT |
Package Shape |
RECTANGULAR |
Turn-off Time-Nom (toff) |
382 ns |
Package Description |
FLANGE MOUNT, R-PSFM-T3 |
Operating Temperature-Max |
175 °C |
Manufacturer Part Number |
IGW30N60TXK |
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
Transistor Element Material |
SILICON |
Number of Terminals |
3 |
Surface Mount |
NO |
Factory Lead Time |
20 Weeks |
ECCN Code |
EAR99 |
Configuration |
SINGLE |
Continuous Collector Current |
60 |
Collector Current-Max (IC) |
60 A |
JEDEC-95 Code |
TO-247AC |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
Case Connection |
COLLECTOR |
Number of Elements |
1 |
Turn-on Time-Nom (ton) |
50 ns |
JESD-30 Code |
R-PSFM-T3 |
Reach Compliance Code |
compliant |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Terminal Form |
THROUGH-HOLE |
Terminal Position |
SINGLE |
Additional Feature |
FAST SWITCHING |
Collector-Emitter Voltage-Max |
600 V |