Showing 1825–1836 of 15245 results
Infineon IPA100N08N3 G
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Terminal Finish |
Matte Tin (Sn) |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
40 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPA100N08N3G |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
175 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
TO-220AB |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.8 |
| Rohs Code |
Yes |
| JESD-609 Code |
e3 |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Number of Terminals |
3 |
| Surface Mount |
NO |
| Case Connection |
ISOLATED |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Terminal Position |
SINGLE |
| Subcategory |
FET General Purpose Power |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
40 A |
| Drain-source On Resistance-Max |
0.01 Ω |
| Pulsed Drain Current-Max (IDM) |
160 A |
| DS Breakdown Voltage-Min |
80 V |
| Avalanche Energy Rating (Eas) |
110 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Terminal Form |
THROUGH-HOLE |
| Power Dissipation-Max (Abs) |
35 W |
Infineon IPB035N08N3GXT
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Body Material |
PLASTIC/EPOXY |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Continuous Drain Current Id |
100 |
| Drain Current-Max (ID) |
100 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPB035N08N3GXT |
| Pbfree Code |
Yes |
| Operating Temperature-Max |
175 °C |
| Package Description |
SMALL OUTLINE, R-PSSO-G2 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.76 |
| Rohs Code |
Yes |
| Surface Mount |
YES |
| Factory Lead Time |
18 Weeks |
| Case Connection |
DRAIN |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| ECCN Code |
EAR99 |
| JEDEC-95 Code |
TO-263AB |
| Drain-source On Resistance-Max |
0.0035 Ω |
| Pulsed Drain Current-Max (IDM) |
400 A |
| DS Breakdown Voltage-Min |
80 V |
| Channel Type |
N |
| Avalanche Energy Rating (Eas) |
510 mJ |
| Terminal Form |
GULL WING |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Infineon IPC218N04N3
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Rohs Code |
Yes |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPC218N04N3 |
| Package Body Material |
UNSPECIFIED |
| Package Description |
UNCASED CHIP, R-XXUC-N |
| Package Shape |
RECTANGULAR |
| Package Style |
UNCASED CHIP |
| Part Life Cycle Code |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.71 |
| Surface Mount |
YES |
| Terminal Position |
UNSPECIFIED |
| ECCN Code |
EAR99 |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-XXUC-N |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Drain-source On Resistance-Max |
0.05 Ω |
| DS Breakdown Voltage-Min |
40 V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Infineon IPC218N06L3
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPC218N06L3 |
| Package Body Material |
UNSPECIFIED |
| Package Description |
UNCASED CHIP, R-XXUC-N |
| Package Shape |
RECTANGULAR |
| Package Style |
UNCASED CHIP |
| Part Life Cycle Code |
Obsolete |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.71 |
| Rohs Code |
Yes |
| Terminal Position |
UNSPECIFIED |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-XXUC-N |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Drain-source On Resistance-Max |
0.1 Ω |
| DS Breakdown Voltage-Min |
60 V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Infineon IPC302N10N3
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPC302N10N3 |
| Package Body Material |
UNSPECIFIED |
| Package Description |
UNCASED CHIP, R-XXUC-N |
| Package Shape |
RECTANGULAR |
| Package Style |
UNCASED CHIP |
| Part Life Cycle Code |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.71 |
| Rohs Code |
Yes |
| Terminal Position |
UNSPECIFIED |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-XXUC-N |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Drain-source On Resistance-Max |
0.1 Ω |
| DS Breakdown Voltage-Min |
100 V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Infineon IPC302N15N3
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPC302N15N3 |
| Package Body Material |
UNSPECIFIED |
| Package Description |
UNCASED CHIP, R-XXUC-N |
| Package Shape |
RECTANGULAR |
| Package Style |
UNCASED CHIP |
| Part Life Cycle Code |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.7 |
| Rohs Code |
Yes |
| Terminal Position |
UNSPECIFIED |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| JESD-30 Code |
R-XXUC-N |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Drain-source On Resistance-Max |
0.1 Ω |
| DS Breakdown Voltage-Min |
150 V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Infineon IPDQ60R017S7AXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
30 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
500 W |
| Qg - Gate Charge |
196 nC |
| Rds On - Drain-Source Resistance |
17 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |