Showing 1837–1848 of 15245 results
Infineon IPDQ60R017S7XTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
30 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
500 W |
| Qg - Gate Charge |
196 nC |
| Rds On - Drain-Source Resistance |
17 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPDQ60R040S7AXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
14 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
272 W |
| Qg - Gate Charge |
83 nC |
| Rds On - Drain-Source Resistance |
40 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPI80N06S2L-11
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Shape |
RECTANGULAR |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
80 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPI80N06S2L-11 |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
175 °C |
| Package Body Material |
PLASTIC/EPOXY |
| ECCN Code |
EAR99 |
| Package Description |
GREEN, PLASTIC, TO-262, 3 PIN |
| Package Style |
IN-LINE |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
TO-262AA |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.26 |
| Rohs Code |
Yes |
| JESD-609 Code |
e3 |
| Pbfree Code |
Yes |
| Number of Terminals |
3 |
| Surface Mount |
NO |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Subcategory |
FET General Purpose Power |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Terminal Finish |
Tin (Sn) |
| JEDEC-95 Code |
TO-262AA |
| Drain Current-Max (Abs) (ID) |
80 A |
| Drain-source On Resistance-Max |
0.0147 Ω |
| Pulsed Drain Current-Max (IDM) |
320 A |
| DS Breakdown Voltage-Min |
55 V |
| Avalanche Energy Rating (Eas) |
280 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Terminal Position |
SINGLE |
| Power Dissipation-Max (Abs) |
158 W |
Infineon IPP100N04S3-03
In stock
| Manufacturer |
Infineon |
|---|---|
| Package Body Material |
PLASTIC/EPOXY |
| Surface Mount |
NO |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Drain Current-Max (ID) |
100 A |
| Package Description |
GREEN, PLASTIC, TO-220, 3 PIN |
| Id - Continuous Drain Current |
100 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPP100N04S3-03 |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
175 °C |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Package / Case |
TO-220-3 |
| Rds On - Drain-Source Resistance |
3.3 mOhms |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Not Recommended |
| Part Package Code |
TO-220AB |
| Pd - Power Dissipation |
214 W |
| Qg - Gate Charge |
110 nC |
| Qualification |
AEC-Q101 |
| Package Shape |
RECTANGULAR |
| Risk Rank |
8.45 |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rohs Code |
Yes |
| Tradename |
OptiMOS |
| Transistor Polarity |
N-Channel |
| Typical Turn-Off Delay Time |
46 ns |
| Typical Turn-On Delay Time |
30 ns |
| Unit Weight |
0.068784 oz |
| Factory Pack Quantity:Factory Pack Quantity |
500 |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Terminal Position |
SINGLE |
| Configuration |
Single |
| Series |
OptiMOS-T |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| HTS Code |
8541.29.00.95 |
| Subcategory |
MOSFETs |
| Technology |
Si |
| Number of Channels |
1 Channel |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Vgs th - Gate-Source Threshold Voltage |
4 V |
| Packaging |
Tube |
| Drain-source On Resistance-Max |
0.0028 Ω |
| Rise Time |
16 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
MOSFET |
| Transistor Type |
1 N-Channel |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
100 A |
| Operating Mode |
ENHANCEMENT MODE |
| DS Breakdown Voltage-Min |
40 V |
| Pulsed Drain Current-Max (IDM) |
400 A |
| Avalanche Energy Rating (Eas) |
898 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
214 W |
| Product Category |
MOSFET |
| Height |
15.65 mm |
| Length |
10 mm |
| Width |
4.4 mm |
Infineon IPP80N04S2L-03
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Shape |
RECTANGULAR |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
80 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPP80N04S2L-03 |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
175 °C |
| Package Body Material |
PLASTIC/EPOXY |
| ECCN Code |
EAR99 |
| Package Description |
GREEN, PLASTIC, TO-220, 3 PIN |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
TO-220AB |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.66 |
| Rohs Code |
Yes |
| JESD-609 Code |
e3 |
| Pbfree Code |
Yes |
| Number of Terminals |
3 |
| Surface Mount |
NO |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Subcategory |
FET General Purpose Power |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Terminal Finish |
Tin (Sn) |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
80 A |
| Drain-source On Resistance-Max |
0.0034 Ω |
| Pulsed Drain Current-Max (IDM) |
320 A |
| DS Breakdown Voltage-Min |
40 V |
| Avalanche Energy Rating (Eas) |
810 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Terminal Position |
SINGLE |
| Power Dissipation-Max (Abs) |
300 W |
Infineon IPP90N06S4-04
In stock
| Manufacturer |
Infineon |
|---|---|
| Package Body Material |
PLASTIC/EPOXY |
| Surface Mount |
NO |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Drain Current-Max (ID) |
90 A |
| Package Description |
GREEN, PLASTIC, TO-220, 3 PIN |
| Id - Continuous Drain Current |
90 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPP90N06S4-04 |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
175 °C |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Package / Case |
TO-220-3 |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part # Aliases |
SP000379634 IPP90N06S404AKSA1 |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
TO-220AB |
| Pd - Power Dissipation |
150 W |
| Qg - Gate Charge |
99 nC |
| Rds On - Drain-Source Resistance |
3.7 mOhms |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
8.62 |
| Rohs Code |
Yes |
| Tradename |
OptiMOS |
| Transistor Polarity |
N-Channel |
| Unit Weight |
0.068784 oz |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Factory Pack Quantity:Factory Pack Quantity |
500 |
| Vgs th - Gate-Source Threshold Voltage |
4 V |
| Terminal Form |
THROUGH-HOLE |
| Number of Channels |
1 Channel |
| JESD-609 Code |
e3 |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN |
| Subcategory |
MOSFETs |
| Technology |
Si |
| Terminal Position |
SINGLE |
| Operating Mode |
ENHANCEMENT MODE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
Single |
| Packaging |
Tube |
| Series |
OptiMOS-T2 |
| Case Connection |
DRAIN |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
MOSFET |
| Transistor Type |
1 N-Channel |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
90 A |
| Drain-source On Resistance-Max |
0.004 Ω |
| Pulsed Drain Current-Max (IDM) |
360 A |
| DS Breakdown Voltage-Min |
60 V |
| Avalanche Energy Rating (Eas) |
331 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
150 W |
| Product Category |
MOSFET |
| Height |
15.65 mm |
| Length |
10 mm |
| Width |
4.4 mm |
Infineon IPQC60R010S7AXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
50 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
694 W |
| Qg - Gate Charge |
318 nC |
| Rds On - Drain-Source Resistance |
10 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPQC60R017S7XTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-HDSOP-22 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
30 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 40 C |
| Pd - Power Dissipation |
500 W |
| Qg - Gate Charge |
196 nC |
| Rds On - Drain-Source Resistance |
17 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
600 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
4.5 V |
| Series |
S7 |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IPS040N03L G
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Shape |
RECTANGULAR |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Drain Current-Max (ID) |
89 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPS040N03LG |
| Moisture Sensitivity Level |
1 |
| Operating Temperature-Max |
175 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Terminal Finish |
MATTE TIN |
| Surface Mount |
NO |
| Package Style |
IN-LINE |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
TO-251 |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.81 |
| Rohs Code |
Yes |
| JESD-609 Code |
e3 |
| Pbfree Code |
Yes |
| ECCN Code |
EAR99 |
| Package Description |
IN-LINE, R-PSIP-T3 |
| HTS Code |
8541.29.00.95 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Subcategory |
FET General Purpose Power |
| Technology |
Ethernet |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-251 |
| Drain Current-Max (Abs) (ID) |
90 A |
| Drain-source On Resistance-Max |
0.0059 Ω |
| Pulsed Drain Current-Max (IDM) |
400 A |
| DS Breakdown Voltage-Min |
30 V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
79 W |
Infineon IPW65R099C6
In stock
| Manufacturer |
Infineon |
|---|---|
| Vds - Drain-Source Breakdown Voltage |
650 V |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Factory Pack Quantity:Factory Pack Quantity |
240 |
| Id - Continuous Drain Current |
38 A |
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG |
| Manufacturer Part Number |
IPW65R099C6 |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Part Life Cycle Code |
Not Recommended |
| Part Package Code |
TO-247 |
| Pd - Power Dissipation |
278 W |
| Qg - Gate Charge |
127 nC |
| Rds On - Drain-Source Resistance |
89 mOhms |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
8.5 |
| Rohs Code |
Yes |
| Tradename |
CoolMOS |
| Transistor Polarity |
N-Channel |
| Typical Turn-Off Delay Time |
77 ns |
| Typical Turn-On Delay Time |
10.6 ns |
| Unit Weight |
0.211644 oz |
| Surface Mount |
NO |
| Package / Case |
TO-247-3 |
| Operating Mode |
ENHANCEMENT MODE |
| Transistor Application |
SWITCHING |
| Series |
CoolMOS C6 |
| Pbfree Code |
Yes |
| Subcategory |
MOSFETs |
| Technology |
Si |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Number of Elements |
1 |
| Configuration |
Single |
| Number of Channels |
1 Channel |
| Vgs th - Gate-Source Threshold Voltage |
2.5 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Rise Time |
9 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
MOSFET |
| Transistor Type |
1 N-Channel |
| JEDEC-95 Code |
TO-247 |
| Drain-source On Resistance-Max |
0.099 Ω |
| Pulsed Drain Current-Max (IDM) |
115 A |
| DS Breakdown Voltage-Min |
650 V |
| Avalanche Energy Rating (Eas) |
845 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Product Category |
MOSFET |
| Height |
21.1 mm |
| Length |
16.13 mm |
| Packaging |
Tube |
| Width |
5.21 mm |