Showing 1849–1860 of 15245 results
Infineon IQE022N06LM5CGATMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Mounting Style |
SMD/SMT |
| 1st Connector Mounting Type |
Free Hanging (In-Line) |
| Cable Material |
Polyurethane (PUR) |
| Base Product Number |
IQE022 |
| Brand |
Infineon Technologies |
| Channel Mode |
Enhancement |
| Factory Pack Quantity:Factory Pack Quantity |
5000 |
| Transistor Polarity |
N-Channel |
| Package / Case |
PG-TTFN-9 |
| Mfr |
ifm efector, inc. |
| Minimum Operating Temperature |
– 55 C |
| Package |
Box |
| Pd - Power Dissipation |
100 W |
| Product Status |
Active |
| Qg - Gate Charge |
53 nC |
| Rds On - Drain-Source Resistance |
2.2 mOhms |
| Id - Continuous Drain Current |
151 A |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| 1st Connector Gender |
Female Sockets |
| 1st Connector Number of Positions Loaded |
All |
| Packaging |
Reel |
| Color |
Black |
| Technology |
Si |
| Shielding |
Unshielded |
| Number of Channels |
1 Channel |
| Cable Type |
Round |
| Usage |
Industrial Environments |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
2.3 V |
| 1st Connector Type |
Plug |
| 1st Connector Number of Positions |
5 |
| Assembly Configuration |
Standard |
| 2nd Connector Type |
Wire Leads |
| 1st Connector Orientation |
A |
| 1st Connector Shell Size - Insert |
M12 |
| Product Category |
Infineon |
| Length |
49.2 (15.00m) |
Infineon IRF60DM206ATMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Continuous Drain Current Id |
130A |
| Id - Continuous Drain Current |
130 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Qg - Gate Charge |
133 nC |
| Rds On - Drain-Source Resistance |
2.9 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
3.7 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
| Power Dissipation |
96W |
| Channel Type |
N Channel |
Infineon IRF7821TRPBFXTMA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
SO-8 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
13.6 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
2.5 W |
| Qg - Gate Charge |
9.3 nC |
| Rds On - Drain-Source Resistance |
9.1 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
30 V |
| Vgs - Gate-Source Voltage |
– 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage |
1 V |
| Technology |
Si |
| Number of Channels |
1 Channel |
Infineon IRF8714TRPBF-1
In stock
| Manufacturer |
Infineon |
|---|---|
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Supplier Device Package |
8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Infineon Technologies |
| Package |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.5W (Ta) |
| Product Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Technology |
MOSFET (Metal Oxide) |
| Series |
HEXFET® |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.7mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id |
2.35V @ 25µA |
| Input Capacitance (Ciss) (Max) @ Vds |
1020 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C |
14A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Vgs (Max) |
±20V |
Infineon IRFC4568EB
In stock
| Manufacturer |
Infineon |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Product Status |
Obsolete |
| Series |
HEXFET® |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Current - Continuous Drain (Id) @ 25°C |
171A (Ta) |
| Drain to Source Voltage (Vdss) |
150 V |
Infineon IRG4BH20K-STRR
In stock
| Manufacturer |
Infineon |
|---|---|
| Automotive |
No |
| ECCN (US) |
EAR99 |
| EU RoHS |
Not Compliant |
| Lead Shape |
Gull-wing |
| Maximum Collector-Emitter Voltage (V) |
1200 |
| Maximum Continuous Collector Current (A) |
11 |
| Maximum Gate Emitter Leakage Current (uA) |
0.1 |
| Maximum Gate Emitter Voltage (V) |
±20 |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
60 |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Surface Mount |
| Package Height |
4.83(Max) |
| Package Length |
10.67(Max) |
| Package Width |
9.65(Max) |
| PCB changed |
2 |
| PPAP |
No |
| Standard Package Name |
TO-263 |
| Supplier Package |
D2PAK |
| Tab |
Tab |
| Typical Collector Emitter Saturation Voltage (V) |
4.04 |
| Packaging |
Tape and Reel |
| Part Status |
Obsolete |
| Pin Count |
3 |
| Configuration |
Single |
| Channel Type |
N |
Infineon IRG4PC30W
In stock
| Manufacturer |
International Rectifier |
|---|---|
| Terminal Position |
SINGLE |
| Number of Pins |
3 |
| Weight |
38.000013 g |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP |
| Manufacturer Part Number |
IRG4PC30W |
| Operating Temperature-Max |
150 °C |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
FLANGE MOUNT, R-PSFM-T3 |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Transferred |
| Reflow Temperature-Max (s) |
30 |
| Risk Rank |
5 |
| Part Package Code |
TO-247AC |
| Rohs Code |
No |
| Turn-off Time-Nom (toff) |
300 ns |
| Turn-on Time-Nom (ton) |
41 ns |
| Voltage Rating (DC) |
600 V |
| Packaging |
Bulk |
| JESD-609 Code |
e0 |
| Termination |
Through Hole |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Max Operating Temperature |
150 °C |
| Min Operating Temperature |
-55 °C |
| Additional Feature |
LOW CONDUCTION LOSS |
| Subcategory |
Insulated Gate BIP Transistors |
| Max Power Dissipation |
100 W |
| Surface Mount |
NO |
| Mount |
Through Hole |
| Max Collector Current |
23 A |
| JEDEC-95 Code |
TO-247AC |
| Current Rating |
23 A |
| Pin Count |
2 |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
SINGLE |
| Element Configuration |
Dual |
| Power Dissipation |
100 W |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Rise Time |
16 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7 V |
| Peak Reflow Temperature (Cel) |
225 |
| Terminal Form |
THROUGH-HOLE |
| Collector Emitter Breakdown Voltage |
600 V |
| Collector Emitter Saturation Voltage |
2.7 V |
| Power Dissipation-Max (Abs) |
100 W |
| Collector Current-Max (IC) |
23 A |
| Collector-Emitter Voltage-Max |
600 V |
| Gate-Emitter Voltage-Max |
20 V |
| Gate-Emitter Thr Voltage-Max |
6 V |
| Fall Time-Max (tf) |
100 ns |
| Height |
20.2946 mm |
| Length |
15.875 mm |
| Width |
5.3 mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Reach Compliance Code |
compliant |
| Lead Free |
Lead Free |