Showing 1861–1872 of 15245 results
Filter by price
Filter by manufacturer
Series
Discrete Semiconductors
Infineon IRG7IA19UPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Maximum Operating Temperature (°C) |
150 |
Transistor Element Material |
SILICON |
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant |
Lead Shape |
Through Hole |
Maximum Collector-Emitter Voltage (V) |
360 |
Maximum Continuous Collector Current (A) |
30 |
Maximum Gate Emitter Leakage Current (uA) |
0.1 |
Standard Package Name |
TO-220 |
Maximum Gate Emitter Voltage (V) |
±30 |
Maximum Power Dissipation (mW) |
35 |
Minimum Operating Temperature (°C) |
-40 |
Mounting |
Through Hole |
Package Height |
16.13(Max) |
Package Length |
10.75(Max) |
Package Shape |
RECTANGULAR |
Package Width |
4.83(Max) |
PCB changed |
3 |
PPAP |
No |
Number of Terminals |
3 |
Surface Mount |
NO |
Number of Elements |
1 |
Tab |
Tab |
Additional Feature |
HIGH RELIABILITY |
Subcategory |
Insulated Gate BIP Transistors |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
Reach Compliance Code |
unknown |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Configuration |
Single |
Case Connection |
ISOLATED |
Supplier Package |
TO-220AB Full-Pak |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-220AB |
Channel Type |
N |
Power Dissipation-Max (Abs) |
35 W |
Collector Current-Max (IC) |
30 A |
Collector-Emitter Voltage-Max |
360 V |
Gate-Emitter Voltage-Max |
30 V |
Part Status |
Obsolete |
Gate-Emitter Thr Voltage-Max |
4.7 V |
Infineon IRG7PA19UPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Maximum Power Dissipation (mW) |
104 |
Transistor Element Material |
SILICON |
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant |
Lead Shape |
Through Hole |
Maximum Collector-Emitter Voltage (V) |
360 |
Maximum Continuous Collector Current (A) |
50 |
Maximum Gate Emitter Leakage Current (uA) |
0.1 |
Maximum Gate Emitter Voltage (V) |
±30 |
Tab |
Tab |
Maximum Operating Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-40 |
Mounting |
Through Hole |
Package Height |
20.7(Max) |
Package Length |
15.87(Max) |
Package Shape |
RECTANGULAR |
Package Width |
5.31(Max) |
PCB changed |
3 |
PPAP |
No |
Standard Package Name |
TO-247 |
Supplier Package |
TO-247AC |
Number of Terminals |
3 |
Surface Mount |
NO |
Qualification Status |
Not Qualified |
Pbfree Code |
Yes |
ECCN Code |
EAR99 |
Additional Feature |
HIGH RELIABILITY |
Subcategory |
Insulated Gate BIP Transistors |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
Peak Reflow Temperature (Cel) |
250 |
Reach Compliance Code |
compliant |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Number of Elements |
1 |
Configuration |
Single |
JESD-609 Code |
e3 |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-247AC |
Channel Type |
N |
Power Dissipation-Max (Abs) |
104 W |
Collector Current-Max (IC) |
50 A |
Collector-Emitter Voltage-Max |
360 V |
Gate-Emitter Voltage-Max |
30 V |
Part Status |
Obsolete |
Gate-Emitter Thr Voltage-Max |
4.7 V |
Infineon IRG7R313UPBF
In stock
Manufacturer |
International Rectifier |
---|---|
Supplier Package |
DPAK |
Transistor Element Material |
SILICON |
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant with Exemption |
Lead Shape |
Gull-wing |
Maximum Collector-Emitter Voltage (V) |
330 |
Maximum Continuous Collector Current (A) |
40 |
Maximum Gate Emitter Leakage Current (uA) |
0.1 |
Maximum Operating Temperature (°C) |
150 |
Maximum Power Dissipation (mW) |
78 |
Maximum Gate Emitter Voltage (V) |
±30 |
Minimum Operating Temperature (°C) |
-40 |
Mounting |
Surface Mount |
Package Height |
2.39(Max) |
Package Length |
6.73(Max) |
Package Shape |
RECTANGULAR |
Package Width |
6.22(Max) |
PCB changed |
2 |
PPAP |
No |
Standard Package Name |
TO-252 |
Number of Terminals |
2 |
Surface Mount |
YES |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Part Status |
Obsolete |
Terminal Finish |
MATTE TIN OVER NICKEL |
Subcategory |
Insulated Gate BIP Transistors |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Reach Compliance Code |
compliant |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
JESD-609 Code |
e3 |
Tab |
Tab |
Configuration |
Single |
Case Connection |
COLLECTOR |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-252AA |
Channel Type |
N |
Power Dissipation-Max (Abs) |
78 W |
Collector Current-Max (IC) |
40 A |
Collector-Emitter Voltage-Max |
330 V |
Gate-Emitter Voltage-Max |
30 V |
Pbfree Code |
Yes |
Gate-Emitter Thr Voltage-Max |
4.7 V |
Infineon IRG7RC07SDPBF
In stock
Manufacturer |
Infineon |
---|---|
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Supplier Unconfirmed |
Maximum Collector-Emitter Voltage (V) |
600 |
Maximum Continuous Collector Current (A) |
16 |
Maximum Gate Emitter Leakage Current (uA) |
0.1 |
Maximum Gate Emitter Voltage (V) |
±30 |
Maximum Operating Temperature (°C) |
150 |
Maximum Power Dissipation (mW) |
39000 |
Minimum Operating Temperature (°C) |
-55 |
PPAP |
No |
Typical Collector Emitter Saturation Voltage (V) |
1.2 |
Part Status |
Obsolete |
Configuration |
Single |
Channel Type |
N |
Infineon IRG7SC28UPBF
In stock
Manufacturer |
International Rectifier |
---|---|
SVHC Exceeds Threshold |
Yes |
Transistor Element Material |
SILICON |
Automotive |
No |
ECCN (US) |
EAR99 |
EU RoHS |
Compliant with Exemption |
Lead Shape |
Gull-wing |
Maximum Collector-Emitter Voltage (V) |
600 |
Maximum Continuous Collector Current (A) |
60 |
Maximum Gate Emitter Leakage Current (uA) |
0.1 |
Maximum Gate Emitter Voltage (V) |
±30 |
Maximum Power Dissipation (mW) |
171 |
Minimum Operating Temperature (°C) |
-40 |
Maximum Operating Temperature (°C) |
150 |
Mounting |
Surface Mount |
Package Height |
4.83(Max) |
Package Length |
10.67(Max) |
Package Shape |
RECTANGULAR |
Package Width |
9.65(Max) |
PCB changed |
2 |
PPAP |
No |
Standard Package Name |
TO-263 |
Supplier Package |
D2PAK |
SVHC |
Yes |
Number of Terminals |
2 |
Surface Mount |
YES |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Part Status |
Obsolete |
Terminal Finish |
MATTE TIN OVER NICKEL |
Additional Feature |
HIGH RELIABILITY |
Subcategory |
Insulated Gate BIP Transistors |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Reach Compliance Code |
compliant |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
JESD-609 Code |
e3 |
Tab |
Tab |
Configuration |
Single |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-263AB |
Channel Type |
N |
Power Dissipation-Max (Abs) |
171 W |
Collector Current-Max (IC) |
60 A |
Collector-Emitter Voltage-Max |
600 V |
Gate-Emitter Voltage-Max |
30 V |
Pbfree Code |
Yes |
Gate-Emitter Thr Voltage-Max |
4.7 V |
Infineon IRGP4069D-EPBF
In stock
Manufacturer |
Infineon |
---|---|
Rise Time-Max |
42ns |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Power Dissipation (Max) |
268W |
JESD-609 Code |
e3 |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Peak Reflow Temperature (Cel) |
250 |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Power Dissipation |
268W |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.85V |
Max Collector Current |
76A |
Reverse Recovery Time |
120 ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
78 ns |
Turn Off Time-Nom (toff) |
188 ns |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
54ns |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |