Showing 2041–2052 of 15245 results
Infineon Technologies AG FZ3600R17HP4NPSA1
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Automotive |
No |
| ECCN (US) |
EAR99 |
| Maximum Collector-Emitter Voltage (V) |
1700 |
| Maximum Continuous Collector Current (A) |
3600 |
| Maximum Gate Emitter Leakage Current (uA) |
0.4 |
| Maximum Gate Emitter Voltage (V) |
±20 |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
21000000 |
| Military |
No |
| Minimum Operating Temperature (°C) |
-40 |
| Mounting |
Screw |
| Package Length |
190 |
| Package Width |
140 |
| PCB changed |
9 |
| Supplier Package |
IHMB190-2 |
| Typical Collector Emitter Saturation Voltage (V) |
1.9 |
| Packaging |
Tray |
| Part Status |
Obsolete |
| Pin Count |
9 |
| Configuration |
Triple |
| Channel Type |
N |
| RoHS Status |
RoHS non-compliant |
Infineon Technologies AG FZ600R12KE3
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Pin Count |
5 |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
175°C |
| Pbfree Code |
icon-pbfree yes |
| ECCN Code |
EAR99 |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Surface Mount |
NO |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-XUFM-X3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
ISOLATED |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
2750W |
| Turn On Time |
400 ns |
| Collector Current-Max (IC) |
900A |
| Turn Off Time-Nom (toff) |
830 ns |
| Collector-Emitter Voltage-Max |
1200V |
| Gate-Emitter Voltage-Max |
20V |
| VCEsat-Max |
2.15 V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AG FZ800R12KE3
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Pin Count |
5 |
| Number of Terminals |
4 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
150°C |
| Pbfree Code |
icon-pbfree yes |
| ECCN Code |
EAR99 |
| Terminal Position |
UPPER |
| Terminal Form |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Surface Mount |
NO |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-XUFM-X4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
ISOLATED |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Power Dissipation-Max (Abs) |
3550W |
| Turn On Time |
440 ns |
| Collector Current-Max (IC) |
1200A |
| Turn Off Time-Nom (toff) |
1000 ns |
| Collector-Emitter Voltage-Max |
1200V |
| Gate-Emitter Voltage-Max |
20V |
| VCEsat-Max |
2.15 V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AG FZ800R12KF4NOSA1
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Automotive |
No |
| ECCN (US) |
EAR99 |
| Maximum Collector-Emitter Voltage (V) |
1200 |
| Maximum Continuous Collector Current (A) |
800 |
| Maximum Gate Emitter Leakage Current (uA) |
0.4 |
| Maximum Gate Emitter Voltage (V) |
±20 |
| Maximum Operating Temperature (°C) |
125 |
| Maximum Power Dissipation (mW) |
5400000 |
| Military |
No |
| Minimum Operating Temperature (°C) |
-40 |
| Mounting |
Screw |
| Package Height |
38 |
| Package Length |
140 |
| Package Width |
130 |
| PCB changed |
7 |
| Supplier Package |
IHM130-2 |
| Typical Collector Emitter Saturation Voltage (V) |
2.7 |
| Packaging |
Tray |
| Part Status |
Obsolete |
| Pin Count |
7 |
| Channel Type |
N |
| RoHS Status |
RoHS non-compliant |
Infineon Technologies AG HYBRIDKIT2ENHANCEDTOBO1
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| AEC Qualified Number |
AEC-Q101 |
| Automotive |
Yes |
| ECCN (US) |
EAR99 |
| Maximum Collector-Emitter Voltage (V) |
650 |
| Maximum Continuous Collector Current (A) |
700 |
| Maximum Gate Emitter Leakage Current (uA) |
0.4 |
| Maximum Gate Emitter Voltage (V) |
±20 |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
1500000 |
| Military |
No |
| Minimum Operating Temperature (°C) |
-40 |
| Mounting |
Screw |
| Package Height |
28.5(Max) |
| Package Length |
216 |
| Package Width |
100 |
| PCB changed |
33 |
| Supplier Package |
HYBRID2-1 |
| Typical Collector Emitter Saturation Voltage (V) |
1.3 |
| Packaging |
Tray |
| Part Status |
NRND |
| Pin Count |
33 |
| Configuration |
Hex |
| Channel Type |
N |
| RoHS Status |
Yes with exemptions |
Infineon Technologies AG IGB50N60T
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
175°C |
| JESD-609 Code |
e3 |
| Pbfree Code |
icon-pbfree yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Surface Mount |
YES |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-263AB |
| Power Dissipation-Max (Abs) |
333W |
| Turn On Time |
60 ns |
| Collector Current-Max (IC) |
100A |
| Turn Off Time-Nom (toff) |
396 ns |
| Collector-Emitter Voltage-Max |
600V |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.7V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AG IGT60R070D1
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Height |
2.3 |
| ECCN (US) |
EAR99 |
| Maximum Continuous Drain Current (mA) |
31000 |
| Maximum Drain Source Voltage (V) |
600 |
| Maximum Gate Source Voltage (V) |
-10(Min) |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
125000 |
| Military |
No |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Surface Mount |
| Material |
GaN |
| Package Width |
10.38 |
| Package Length |
9.9 |
| PCB changed |
8 |
| Supplier Package |
HSOF |
| Tab |
Tab |
| Packaging |
Tape and Reel |
| Part Status |
Active |
| Reach Compliance Code |
unknown |
| Pin Count |
9 |
| Configuration |
Single Hex Source |
| Channel Type |
N |
| RoHS Status |
Yes with exemptions |
Infineon Technologies AG IGT60R190D1S
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Package Height |
2.3 |
| ECCN (US) |
EAR99 |
| Maximum Continuous Drain Current (mA) |
12500 |
| Maximum Drain Source Voltage (V) |
600 |
| Maximum Gate Source Voltage (V) |
-10(Min) |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
55500 |
| Military |
No |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Surface Mount |
| Material |
GaN |
| Package Width |
10.38 |
| Package Length |
9.9 |
| PCB changed |
8 |
| Supplier Package |
HSOF |
| Tab |
Tab |
| Packaging |
Tape and Reel |
| Part Status |
Active |
| Reach Compliance Code |
compliant |
| Pin Count |
9 |
| Configuration |
Single Hex Source |
| Channel Type |
N |
| RoHS Status |
Yes with exemptions |
Infineon Technologies AG IGW75N60H3
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Surface Mount |
NO |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Pbfree Code |
icon-pbfree yes |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247 |
| Collector Current-Max (IC) |
140A |
| Collector-Emitter Voltage-Max |
600V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AG IKD15N60RF
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Reach Compliance Code |
compliant |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Max.) |
175°C |
| Operating Temperature (Min.) |
-40°C |
| JESD-609 Code |
e3 |
| Pbfree Code |
icon-pbfree no |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSSO-G2 |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-252 |
| Power Dissipation-Max (Abs) |
250W |
| Turn On Time |
30 ns |
| Collector Current-Max (IC) |
15A |
| Turn Off Time-Nom (toff) |
193 ns |
| Collector-Emitter Voltage-Max |
600V |
| Gate-Emitter Voltage-Max |
20V |
| VCEsat-Max |
2.5 V |
| Gate-Emitter Thr Voltage-Max |
5.7V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AG IRG5U300HF12B
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Mounting |
Screw |
| ECCN (US) |
EAR99 |
| Maximum Collector-Emitter Voltage (V) |
1200 |
| Maximum Continuous Collector Current (A) |
450 |
| Maximum Gate Emitter Leakage Current (uA) |
0.4 |
| Maximum Gate Emitter Voltage (V) |
±20 |
| Maximum Operating Temperature (°C) |
150 |
| Maximum Power Dissipation (mW) |
1890000 |
| Military |
No |
| Minimum Operating Temperature (°C) |
-40 |
| Automotive |
No |
| Package Width |
61.4 |
| Package Length |
106.4 |
| PCB changed |
7 |
| Standard Package Name |
POWIR 62 |
| Supplier Package |
POWIR 62 |
| Typical Collector Emitter Saturation Voltage (V) |
3.2 |
| Packaging |
Box |
| Part Status |
Obsolete |
| Pin Count |
7 |
| Configuration |
Dual |
| Channel Type |
N |
| RoHS Status |
RoHS Compliant |