Showing 2077–2088 of 15245 results
Infineon Technologies AIKQ200N75CP2XKSA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Maximum Collector Emitter Voltage |
750 V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AIKQ200 |
| Brand |
Infineon Technologies |
| Collector- Emitter Voltage VCEO Max |
750 V |
| Current-Collector (Ic) (Max) |
200 A |
| Part # Aliases |
AIKQ200N75CP2 SP005416550 |
| Mounting Type |
Through Hole |
| Maximum Gate Emitter Voltage |
15V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Infineon Technologies |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO247PLUS |
| Factory Pack QuantityFactory Pack Quantity |
240 |
| Pd - Power Dissipation |
1071 W |
| Power - Max |
576 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
1.071kW |
| Input Type |
Standard |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) |
750 V |
| Continuous Collector Current |
200A |
| IGBT Type |
Trench |
| Gate Charge |
1256 nC |
| Current - Collector Pulsed (Icm) |
600 A |
| Td (on/off) @ 25°C |
89ns/266ns |
| Switching Energy |
15.3mJ (on), 7mJ (off) |
| Product Category |
IGBT Transistors |
Infineon Technologies AIKW20N60CTXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
40A |
| Test Conditions |
400V, 20A, 12 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
39 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
166W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 20A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
18ns/199ns |
| Switching Energy |
310μJ (on), 460μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AIKW30N60CTXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
60A |
| Test Conditions |
400V, 30A, 10.6 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
39 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
187W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
167nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
23ns/254ns |
| Switching Energy |
690μJ (on), 770μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AIKW40N65DH5XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
74A |
| Test Conditions |
400V, 20A, 15 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
39 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
250W |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| IGBT Type |
Trench |
| Gate Charge |
95nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
19ns/165ns |
| Switching Energy |
350μJ (on), 100μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AIKW50N65DH5XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
39 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Test Conditions |
400V, 25A, 12 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
270W |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| IGBT Type |
Trench |
| Gate Charge |
1018nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
21ns/156ns |
| Switching Energy |
490μJ (on), 140μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AIKW50N65RF5XKSA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Product Status |
Active |
| Supplier Device Package |
PG-TO247-3 |
| Base Product Number |
AIKW50 |
| Brand |
Infineon Technologies |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
80 A |
| Factory Pack QuantityFactory Pack Quantity |
240 |
| Maximum Gate Emitter Voltage |
±20.0V |
| Maximum Operating Temperature |
+ 175 C |
| Maximum Collector Emitter Voltage |
650 V |
| Mfr |
Infineon Technologies |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
PG-TO247-3 |
| Part # Aliases |
AIKW50N65RF5 SP001724852 |
| Pd - Power Dissipation |
250 W |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
250W |
| Input Type |
Standard |
| Power - Max |
250 W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Test Conditions |
400V, 25A, 12Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Continuous Collector Current |
80A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
109 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
20ns/156ns |
| Switching Energy |
310μJ (on), 120μJ (off) |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
Infineon Technologies AIKW75N60CTE8188XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 75A, 5 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
428W |
| Reverse Recovery Time |
121ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
470nC |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
33ns/330ns |
| Switching Energy |
2mJ (on), 2.5mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AIKW75N60CTXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 75A, 5 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
39 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
428W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
470nC |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
33ns/330ns |
| Switching Energy |
2mJ (on), 2.5mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1010EZS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
75A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
140W Tc |
| Turn Off Delay Time |
38 ns |
| Packaging |
Tube |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
54 ns |
| Power Dissipation |
140W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5m Ω @ 51A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2810pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
86nC @ 10V |
| Rise Time |
90ns |
| Element Configuration |
Single |
| JESD-30 Code |
R-PDSO-G2 |
| Continuous Drain Current (ID) |
75A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0085Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1324STRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
83 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Series |
HEXFET® |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Fall Time (Typ) |
120 ns |
| Continuous Drain Current (ID) |
195A |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.65m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7590pF @ 24V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Rise Time |
190ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.00165Ohm |
| Drain to Source Breakdown Voltage |
24V |
| Pulsed Drain Current-Max (IDM) |
1420A |
| Avalanche Energy Rating (Eas) |
270 mJ |
| Height |
4.572mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| Power Dissipation |
300W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1324STRL7P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
16 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
340A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
Automotive, AEC-Q101, HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.65m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7590pF @ 24V |
| Gate Charge (Qg) (Max) @ Vgs |
240nC @ 10V |
| Drain to Source Voltage (Vdss) |
24V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
340A |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRF1324WL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
75 ns |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-262-3 Wide Leads |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Power Dissipation (Max) |
300W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
240A |
| Threshold Voltage |
2V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.3m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7630pF @ 19V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
200ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
110 ns |
| Power Dissipation |
300W |
| Turn On Delay Time |
18 ns |
| JEDEC-95 Code |
TO-262AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
24V |
| Nominal Vgs |
2 V |
| Height |
11.3mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |