Manufacturer	Infineon Technologies
Published	2011
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	97A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	230W Tc
Turn Off Delay Time	43 ns
Operating Temperature	-55°C~175°C TJ
JESD-30 Code	R-PSSO-G2
Contact Plating	Tin
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Base Part Number	IRFS4410
Packaging	Tube
Configuration	SINGLE WITH BUILT-IN DIODE
Fall Time (Typ)	57 ns
Continuous Drain Current (ID)	97A
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 58A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	4820pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	52ns
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE

Manufacturer	Infineon Technologies
Operating Temperature	-55°C~175°C TJ
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Supplier Device Package	D2PAK
Current - Continuous Drain (Id) @ 25℃	123A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	99W Tc
Power Dissipation	99W
Turn Off Delay Time	26 ns
Packaging	Tube
Published	2013
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Number of Channels	1
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	10 Weeks
Gate to Source Voltage (Vgs)	20V
FET Type	N-Channel
Vgs(th) (Max) @ Id	3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3183pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Rise Time	77ns
Drain to Source Voltage (Vdss)	40V
Vgs (Max)	±20V
Fall Time (Typ)	43 ns
Continuous Drain Current (ID)	123A
Input Capacitance	3.183nF
Drain to Source Resistance	2.6mOhm
Turn On Delay Time	10 ns
Rds On Max	3.3 mΩ
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm

Manufacturer	Infineon Technologies
Packaging	Tube
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Current - Continuous Drain (Id) @ 25℃	195A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	230W Tc
Turn Off Delay Time	78 ns
Power Dissipation	230W
Operating Temperature	-55°C~175°C TJ
Published	2011
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Base Part Number	IRFS8407
Number of Channels	1
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	16 Weeks
Threshold Voltage	3V
FET Type	N-Channel
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	7330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	225nC @ 10V
Rise Time	70ns
Vgs (Max)	±20V
Fall Time (Typ)	53 ns
Continuous Drain Current (ID)	195A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Turn On Delay Time	19 ns
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

Manufacturer	Infineon Technologies
Turn On Delay Time	23 ns
Mounting Type	Surface Mount
Number of Pins	7
Supplier Device Package	D2PAK
Current - Continuous Drain (Id) @ 25℃	240A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	294W Tc
Turn Off Delay Time	107 ns
Packaging	Tube
Published	2010
Operating Temperature	-55°C~175°C TJ
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Base Part Number	IRFS8408
Number of Channels	1
Element Configuration	Single
Power Dissipation	294W
Mount	Surface Mount
Factory Lead Time	10 Weeks
Drain to Source Breakdown Voltage	40V
Input Capacitance	10.25nF
Input Capacitance (Ciss) (Max) @ Vds	10250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	315nC @ 10V
Rise Time	125ns
Drain to Source Voltage (Vdss)	40V
Vgs (Max)	±20V
Fall Time (Typ)	85 ns
Continuous Drain Current (ID)	240A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	1mOhm @ 100A, 10V
FET Type	N-Channel
Drain to Source Resistance	1mOhm
Rds On Max	1 mΩ
Nominal Vgs	3 V

Discrete Semiconductors