Showing 2149–2160 of 15245 results
Infineon Technologies AUIRFZ44N
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
47 ns |
| Mount |
Surface Mount, Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
49A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation (Max) |
94W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Fall Time (Typ) |
60 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
17.5m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1470pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Rise Time |
69ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
49A |
| Threshold Voltage |
2V |
| Power Dissipation |
45W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
55V |
| Height |
16.51mm |
| Length |
10.66mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Turn On Delay Time |
7.3 ns |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRFZ44VZS
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
57A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
92W Tc |
| Turn Off Delay Time |
35 ns |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Contact Plating |
Tin |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
38 ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
62ns |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| Continuous Drain Current (ID) |
57A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Power Dissipation |
92W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRG4BC30SSTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
34A |
| Number of Elements |
1 |
| Test Conditions |
480V, 18A, 23 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
9 Weeks |
| Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 18A |
| Turn Off Time-Nom (toff) |
1550 ns |
| Input Type |
Standard |
| Power - Max |
100W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation-Max (Abs) |
100W |
| Turn On Time |
40 ns |
| Configuration |
SINGLE |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
68A |
| Td (on/off) @ 25°C |
22ns/540ns |
| Switching Energy |
260μJ (on), 3.45mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
590ns |
| Case Connection |
COLLECTOR |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRG4PH50S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 33A, 5 Ω, 15V |
| Case Connection |
COLLECTOR |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2007 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
200W |
| Element Configuration |
Single |
| Power Dissipation |
200W |
| Mount |
Through Hole |
| Factory Lead Time |
9 Weeks |
| Current - Collector Pulsed (Icm) |
114A |
| Polarity/Channel Type |
N-CHANNEL |
| Max Collector Current |
57A |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
| Turn Off Time-Nom (toff) |
2170 ns |
| Gate Charge |
167nC |
| Td (on/off) @ 25°C |
32ns/845ns |
| Switching Energy |
1.8mJ (on), 19.6mJ (off) |
| Input Type |
Standard |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Collector Emitter Voltage (VCEO) |
1.7V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRGB4062D1-INF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Input Type |
Standard |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| Base Product Number |
AUIRGB4 |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
Automotive, AEC-Q101 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Power - Max |
246 W |
| Current - Collector (Ic) (Max) |
59 A |
| Test Condition |
400V, 24A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
1.77V @ 15V, 24A |
| IGBT Type |
Trench |
| Gate Charge |
51 nC |
| Current - Collector Pulsed (Icm) |
72 A |
| Td (on/off) @ 25°C |
19ns/90ns |
| Switching Energy |
532μJ (on), 311μJ (off) |
| Reverse Recovery Time (trr) |
102 ns |
Infineon Technologies AUIRGDC0250
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
25 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
SUPER-220™ (TO-273AA) |
| Weight |
6.000006g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Current-Collector (Ic) (Max) |
141A |
| Test Conditions |
600V, 33A, 5Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
543W |
| Input Type |
Standard |
| Power - Max |
543W |
| Collector Emitter Voltage (VCEO) |
1.57V |
| Max Collector Current |
141A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
1.57V @ 15V, 33A |
| Gate Charge |
227nC |
| Current - Collector Pulsed (Icm) |
99A |
| Td (on/off) @ 25°C |
-/485ns |
| Switching Energy |
15mJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRGF66524D0
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
60A |
| Test Conditions |
400V, 24A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
15 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
214W |
| Reverse Recovery Time |
176ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 24A |
| Gate Charge |
80nC |
| Current - Collector Pulsed (Icm) |
72A |
| Td (on/off) @ 25°C |
30ns/75ns |
| Switching Energy |
915μJ (on), 280μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRGP35B60PD-E
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Input Type |
Standard |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 22A, 3.3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2011 |
| Part Status |
Obsolete |
| Packaging |
Tube |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
HIGH RELIABILITY |
| Max Power Dissipation |
308W |
| Rise Time-Max |
11ns |
| Element Configuration |
Single |
| Power Dissipation |
308W |
| Case Connection |
COLLECTOR |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Td (on/off) @ 25°C |
26ns/110ns |
| Switching Energy |
220μJ (on), 215μJ (off) |
| Max Collector Current |
60A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
34 ns |
| Vce(on) (Max) @ Vge, Ic |
2.55V @ 15V, 35A |
| Turn Off Time-Nom (toff) |
142 ns |
| IGBT Type |
NPT |
| Gate Charge |
55nC |
| Current - Collector Pulsed (Icm) |
120A |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
16ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Collector Emitter Voltage (VCEO) |
2.55V |
| Lead Free |
Lead Free |
Infineon Technologies AUIRGP4062D-E
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 24A, 10 Ω, 15V |
| Turn Off Delay Time |
104 ns |
| Turn On Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
250W |
| Element Configuration |
Single |
| Power Dissipation |
250W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Td (on/off) @ 25°C |
41ns/104ns |
| Polarity/Channel Type |
N-CHANNEL |
| Max Collector Current |
48A |
| Reverse Recovery Time |
89ns |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
64 ns |
| Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 24A |
| Turn Off Time-Nom (toff) |
164 ns |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
72A |
| Switching Energy |
115μJ (on), 600μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Transistor Application |
POWER CONTROL |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
41ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Collector Emitter Voltage (VCEO) |
600V |
| Lead Free |
Lead Free |
Infineon Technologies AUIRGP4062D1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-247AC |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
55A |
| Test Conditions |
400V, 24A, 10Ohm, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
217W |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
217W |
| Collector Emitter Voltage (VCEO) |
1.77V |
| Max Collector Current |
55A |
| Reverse Recovery Time |
102 ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.77V @ 15V, 24A |
| IGBT Type |
Trench |
| Gate Charge |
77nC |
| Current - Collector Pulsed (Icm) |
72A |
| Td (on/off) @ 25°C |
19ns/90ns |
| Switching Energy |
532μJ (on), 311μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRGP4063D-E
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Rise Time-Max |
56ns |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
100A |
| Number of Elements |
1 |
| Test Conditions |
400V, 48A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2011 |
| Part Status |
Active |
| Packaging |
Tube |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Mounting Type |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 48A |
| Turn Off Time-Nom (toff) |
210 ns |
| Power - Max |
330W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
115ns |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation-Max (Abs) |
330W |
| Turn On Time |
100 ns |
| Case Connection |
COLLECTOR |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| IGBT Type |
Trench |
| Gate Charge |
140nC |
| Current - Collector Pulsed (Icm) |
144A |
| Td (on/off) @ 25°C |
60ns/145ns |
| Switching Energy |
625μJ (on), 1.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
46ns |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |