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Discrete Semiconductors
Infineon Technologies AUIRGP4066D1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Rise Time-Max |
100ns |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
140A |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Published |
2011 |
Part Status |
Obsolete |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSFM-T3 |
Mounting Type |
Through Hole |
Factory Lead Time |
13 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) |
320 ns |
Power - Max |
454W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
240ns |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
454W |
Turn On Time |
115 ns |
Case Connection |
COLLECTOR |
Configuration |
SINGLE WITH BUILT-IN DIODE |
IGBT Type |
Trench |
Gate Charge |
225nC |
Current - Collector Pulsed (Icm) |
225A |
Td (on/off) @ 25°C |
50ns/200ns |
Switching Energy |
4.24mJ (on), 2.17mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
80ns |
Input Type |
Standard |
RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRGP4066D1-E
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2012 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 10 Ω, 15V |
Turn Off Delay Time |
200 ns |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
454W |
Rise Time-Max |
100ns |
Element Configuration |
Single |
Power Dissipation |
454W |
Case Connection |
COLLECTOR |
Mount |
Through Hole |
Factory Lead Time |
25 Weeks |
Current - Collector Pulsed (Icm) |
225A |
Transistor Application |
POWER CONTROL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
140A |
Reverse Recovery Time |
240ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
115 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) |
320 ns |
IGBT Type |
Trench |
Gate Charge |
225nC |
Td (on/off) @ 25°C |
50ns/200ns |
Switching Energy |
4.24mJ (on), 2.17mJ (off) |
Turn On Delay Time |
50 ns |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
80ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.13mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |
Infineon Technologies AUIRGP50B60PD1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
150 ns |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Published |
2010 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
390W |
Rise Time-Max |
15ns |
Element Configuration |
Single |
Power Dissipation |
390W |
Operating Temperature |
-55°C~150°C TJ |
Turn On Delay Time |
40 ns |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
30ns/130ns |
Collector Emitter Voltage (VCEO) |
2.85V |
Max Collector Current |
75A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
39 ns |
Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 50A |
Turn Off Time-Nom (toff) |
161 ns |
IGBT Type |
NPT |
Gate Charge |
205nC |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Switching Energy |
255μJ (on), 375μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
15ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.31mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies AUIRGP65G40D0
In stock
Manufacturer |
Infineon Technologies |
---|---|
ECCN Code |
EAR99 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current-Collector (Ic) (Max) |
62A |
Test Conditions |
400V, 20A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2015 |
Series |
CooliRIGBT™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Factory Lead Time |
11 Weeks |
Reach Compliance Code |
compliant |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Type |
Standard |
Power - Max |
625W |
Reverse Recovery Time |
41ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
Gate Charge |
270nC |
Current - Collector Pulsed (Icm) |
84A |
Td (on/off) @ 25°C |
35ns/142ns |
Switching Energy |
298μJ (on), 147μJ (off) |
RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRGP66524D0
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
15 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AC |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
60A |
Test Conditions |
400V, 24A, 10Ohm, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2014 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
214W |
Input Type |
Standard |
Power - Max |
214W |
Collector Emitter Voltage (VCEO) |
1.9V |
Max Collector Current |
60A |
Reverse Recovery Time |
176 ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 24A |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
72A |
Td (on/off) @ 25°C |
30ns/75ns |
Switching Energy |
915μJ (on), 280μJ (off) |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRGPS4067D1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
247 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 120A, 4.7 Ω, 15V |
Turn Off Delay Time |
198 ns |
Case Connection |
COLLECTOR |
Factory Lead Time |
25 Weeks |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
750W |
JESD-30 Code |
R-PSIP-T3 |
Rise Time-Max |
82ns |
Element Configuration |
Single |
Power Dissipation |
750W |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Gate Charge |
360nC |
Current - Collector Pulsed (Icm) |
360A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.05V |
Max Collector Current |
240A |
Reverse Recovery Time |
360 ns |
JEDEC-95 Code |
TO-274AA |
Turn On Time |
127 ns |
Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 120A |
Turn Off Time-Nom (toff) |
281 ns |
IGBT Type |
Trench |
Turn On Delay Time |
69 ns |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
69ns/198ns |
Switching Energy |
8.2mJ (on), 2.9mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
48ns |
Height |
20.8mm |
Length |
16.1mm |
Width |
5.5mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies AUIRGPS4070D0
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
240A |
Number of Elements |
1 |
Test Conditions |
400V, 120A, 4.7 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
16 Weeks |
Published |
2016 |
Series |
Automotive, AEC-Q101 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Operating Temperature |
-55°C~175°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
150 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
750W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
210ns |
JEDEC-95 Code |
TO-247AA |
JESD-30 Code |
R-PSFM-T3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 120A |
Turn Off Time-Nom (toff) |
285 ns |
IGBT Type |
Trench |
Gate Charge |
250nC |
Current - Collector Pulsed (Icm) |
360A |
Td (on/off) @ 25°C |
40ns/140ns |
Switching Energy |
5.7mJ (on), 4.2mJ (off) |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRGR4045DTRL
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Mounting Type |
Surface Mount |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
12A |
Number of Elements |
1 |
Test Conditions |
400V, 6A, 47 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2011 |
JESD-30 Code |
R-PSSO-G2 |
Factory Lead Time |
13 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Reach Compliance Code |
compliant |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRGR4045 |
JESD-609 Code |
e3 |
Qualification Status |
Not Qualified |
Turn On Time |
38 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 6A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
77W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
74ns |
JEDEC-95 Code |
TO-252AA |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
77W |
Rise Time-Max |
15ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Turn Off Time-Nom (toff) |
127 ns |
IGBT Type |
Trench |
Gate Charge |
19.5nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
27ns/75ns |
Switching Energy |
56μJ (on), 122μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
22ns |
RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRGS30B60KTRL
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
78A |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-30 Code |
R-PSSO-G2 |
Factory Lead Time |
9 Weeks |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Published |
2004 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 30A |
Turn Off Time-Nom (toff) |
237 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
370W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
370W |
Turn On Time |
74 ns |
Rise Time-Max |
39ns |
Configuration |
SINGLE |
IGBT Type |
NPT |
Gate Charge |
102nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
46ns/185ns |
Switching Energy |
350μJ (on), 825μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
42ns |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRGSL30B60K
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2007 |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Transistor Application |
MOTOR CONTROL |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
370W |
Element Configuration |
Single |
Power Dissipation |
370W |
Input Type |
Standard |
Mount |
Through Hole |
Factory Lead Time |
9 Weeks |
Switching Energy |
350μJ (on), 825μJ (off) |
Collector Emitter Voltage (VCEO) |
2.35V |
Turn On Time |
74 ns |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 30A |
Turn Off Time-Nom (toff) |
237 ns |
IGBT Type |
NPT |
Gate Charge |
102nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
46ns/185ns |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Polarity/Channel Type |
N-CHANNEL |
Fall Time-Max (tf) |
42ns |
Height |
11.3mm |
Length |
10.67mm |
Width |
4.83mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Max Collector Current |
78A |
Lead Free |
Lead Free |
Infineon Technologies AUIRL1404ZL
In stock
Manufacturer |
Infineon Technologies |
---|---|
Power Dissipation |
200W |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
200W Tc |
Turn Off Delay Time |
30 ns |
Packaging |
Tube |
Published |
2005 |
Operating Temperature |
-55°C~175°C TJ |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
5.9MOhm |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Threshold Voltage |
1.4V |
Gate to Source Voltage (Vgs) |
16V |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
3.1m Ω @ 75A, 10V |
Vgs(th) (Max) @ Id |
2.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5080pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 5V |
Rise Time |
180ns |
Vgs (Max) |
±16V |
Fall Time (Typ) |
49 ns |
Continuous Drain Current (ID) |
160A |
Turn On Delay Time |
19 ns |
Case Connection |
DRAIN |
Drain to Source Breakdown Voltage |
40V |
Pulsed Drain Current-Max (IDM) |
790A |
Avalanche Energy Rating (Eas) |
490 mJ |
Height |
9.65mm |
Length |
10.67mm |
Width |
4.83mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |