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Discrete Semiconductors

Infineon Technologies AUIRGP4066D1

In stock

SKU: AUIRGP4066D1-9
Manufacturer

Infineon Technologies

Rise Time-Max

100ns

Package / Case

TO-247-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

140A

Number of Elements

1

Test Conditions

400V, 75A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Published

2011

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSFM-T3

Mounting Type

Through Hole

Factory Lead Time

13 Weeks

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

320 ns

Power - Max

454W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

240ns

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

600V

Power Dissipation-Max (Abs)

454W

Turn On Time

115 ns

Case Connection

COLLECTOR

Configuration

SINGLE WITH BUILT-IN DIODE

IGBT Type

Trench

Gate Charge

225nC

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

4.24mJ (on), 2.17mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

80ns

Input Type

Standard

RoHS Status

RoHS Compliant

Infineon Technologies AUIRGP4066D1-E

In stock

SKU: AUIRGP4066D1-E-9
Manufacturer

Infineon Technologies

Published

2012

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 75A, 10 Ω, 15V

Turn Off Delay Time

200 ns

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Packaging

Tube

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

454W

Rise Time-Max

100ns

Element Configuration

Single

Power Dissipation

454W

Case Connection

COLLECTOR

Mount

Through Hole

Factory Lead Time

25 Weeks

Current - Collector Pulsed (Icm)

225A

Transistor Application

POWER CONTROL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

140A

Reverse Recovery Time

240ns

JEDEC-95 Code

TO-247AD

Turn On Time

115 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

320 ns

IGBT Type

Trench

Gate Charge

225nC

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

4.24mJ (on), 2.17mJ (off)

Turn On Delay Time

50 ns

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

80ns

Height

20.7mm

Length

15.87mm

Width

5.13mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

Infineon Technologies AUIRGP50B60PD1

In stock

SKU: AUIRGP50B60PD1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 33A, 3.3 Ω, 15V

Turn Off Delay Time

150 ns

Input Type

Standard

Factory Lead Time

14 Weeks

Published

2010

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

390W

Rise Time-Max

15ns

Element Configuration

Single

Power Dissipation

390W

Operating Temperature

-55°C~150°C TJ

Turn On Delay Time

40 ns

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

30ns/130ns

Collector Emitter Voltage (VCEO)

2.85V

Max Collector Current

75A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

39 ns

Vce(on) (Max) @ Vge, Ic

2.85V @ 15V, 50A

Turn Off Time-Nom (toff)

161 ns

IGBT Type

NPT

Gate Charge

205nC

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Switching Energy

255μJ (on), 375μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

15ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies AUIRGP65G40D0

In stock

SKU: AUIRGP65G40D0-9
Manufacturer

Infineon Technologies

ECCN Code

EAR99

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

62A

Test Conditions

400V, 20A, 4.7 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2015

Series

CooliRIGBT™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Factory Lead Time

11 Weeks

Reach Compliance Code

compliant

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Type

Standard

Power - Max

625W

Reverse Recovery Time

41ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Gate Charge

270nC

Current - Collector Pulsed (Icm)

84A

Td (on/off) @ 25°C

35ns/142ns

Switching Energy

298μJ (on), 147μJ (off)

RoHS Status

RoHS Compliant

Infineon Technologies AUIRGP66524D0

In stock

SKU: AUIRGP66524D0-9
Manufacturer

Infineon Technologies

Factory Lead Time

15 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

60A

Test Conditions

400V, 24A, 10Ohm, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2014

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

214W

Input Type

Standard

Power - Max

214W

Collector Emitter Voltage (VCEO)

1.9V

Max Collector Current

60A

Reverse Recovery Time

176 ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 24A

Gate Charge

80nC

Current - Collector Pulsed (Icm)

72A

Td (on/off) @ 25°C

30ns/75ns

Switching Energy

915μJ (on), 280μJ (off)

RoHS Status

ROHS3 Compliant

Infineon Technologies AUIRGP76524D0

In stock

SKU: AUIRGP76524D0-9
Manufacturer

Infineon Technologies

Factory Lead Time

25 Weeks

Published

2015

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

ROHS3 Compliant

Infineon Technologies AUIRGPS4067D1

In stock

SKU: AUIRGPS4067D1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 120A, 4.7 Ω, 15V

Turn Off Delay Time

198 ns

Case Connection

COLLECTOR

Factory Lead Time

25 Weeks

Published

2011

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

750W

JESD-30 Code

R-PSIP-T3

Rise Time-Max

82ns

Element Configuration

Single

Power Dissipation

750W

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Gate Charge

360nC

Current - Collector Pulsed (Icm)

360A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.05V

Max Collector Current

240A

Reverse Recovery Time

360 ns

JEDEC-95 Code

TO-274AA

Turn On Time

127 ns

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 120A

Turn Off Time-Nom (toff)

281 ns

IGBT Type

Trench

Turn On Delay Time

69 ns

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

69ns/198ns

Switching Energy

8.2mJ (on), 2.9mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

48ns

Height

20.8mm

Length

16.1mm

Width

5.5mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies AUIRGPS4070D0

In stock

SKU: AUIRGPS4070D0-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-274AA

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

240A

Number of Elements

1

Test Conditions

400V, 120A, 4.7 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

16 Weeks

Published

2016

Series

Automotive, AEC-Q101

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

SINGLE

Operating Temperature

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

150 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

750W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

210ns

JEDEC-95 Code

TO-247AA

JESD-30 Code

R-PSFM-T3

Configuration

SINGLE WITH BUILT-IN DIODE

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 120A

Turn Off Time-Nom (toff)

285 ns

IGBT Type

Trench

Gate Charge

250nC

Current - Collector Pulsed (Icm)

360A

Td (on/off) @ 25°C

40ns/140ns

Switching Energy

5.7mJ (on), 4.2mJ (off)

RoHS Status

ROHS3 Compliant

Infineon Technologies AUIRGR4045DTRL

In stock

SKU: AUIRGR4045DTRL-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

12A

Number of Elements

1

Test Conditions

400V, 6A, 47 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2011

JESD-30 Code

R-PSSO-G2

Factory Lead Time

13 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

IRGR4045

JESD-609 Code

e3

Qualification Status

Not Qualified

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 6A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

77W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

74ns

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

600V

Power Dissipation-Max (Abs)

77W

Rise Time-Max

15ns

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Nom (toff)

127 ns

IGBT Type

Trench

Gate Charge

19.5nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

27ns/75ns

Switching Energy

56μJ (on), 122μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

22ns

RoHS Status

RoHS Compliant

Infineon Technologies AUIRGS30B60KTRL

In stock

SKU: AUIRGS30B60KTRL-9
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

78A

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Factory Lead Time

9 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Published

2004

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Turn Off Time-Nom (toff)

237 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

370W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Power Dissipation-Max (Abs)

370W

Turn On Time

74 ns

Rise Time-Max

39ns

Configuration

SINGLE

IGBT Type

NPT

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

RoHS Status

ROHS3 Compliant

Infineon Technologies AUIRGSL30B60K

In stock

SKU: AUIRGSL30B60K-9
Manufacturer

Infineon Technologies

Published

2007

Mounting Type

Through Hole

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Transistor Application

MOTOR CONTROL

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

370W

Element Configuration

Single

Power Dissipation

370W

Input Type

Standard

Mount

Through Hole

Factory Lead Time

9 Weeks

Switching Energy

350μJ (on), 825μJ (off)

Collector Emitter Voltage (VCEO)

2.35V

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

46ns/185ns

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Polarity/Channel Type

N-CHANNEL

Fall Time-Max (tf)

42ns

Height

11.3mm

Length

10.67mm

Width

4.83mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Max Collector Current

78A

Lead Free

Lead Free

Infineon Technologies AUIRL1404ZL

In stock

SKU: AUIRL1404ZL-11
Manufacturer

Infineon Technologies

Power Dissipation

200W

Mounting Type

Through Hole

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

160A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

200W Tc

Turn Off Delay Time

30 ns

Packaging

Tube

Published

2005

Operating Temperature

-55°C~175°C TJ

Series

HEXFET®

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

5.9MOhm

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Mount

Through Hole

Factory Lead Time

16 Weeks

Threshold Voltage

1.4V

Gate to Source Voltage (Vgs)

16V

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

3.1m Ω @ 75A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

5080pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

110nC @ 5V

Rise Time

180ns

Vgs (Max)

±16V

Fall Time (Typ)

49 ns

Continuous Drain Current (ID)

160A

Turn On Delay Time

19 ns

Case Connection

DRAIN

Drain to Source Breakdown Voltage

40V

Pulsed Drain Current-Max (IDM)

790A

Avalanche Energy Rating (Eas)

490 mJ

Height

9.65mm

Length

10.67mm

Width

4.83mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

FET Type

N-Channel

Lead Free

Lead Free