Showing 2173–2184 of 15245 results
Infineon Technologies AUIRL7736M2TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
56 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
DirectFET™ Isometric M4 |
| Number of Pins |
9 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
179A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Factory Lead Time |
16 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
HEXFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| Terminal Position |
BOTTOM |
| JESD-30 Code |
R-XBCC-N5 |
| Power Dissipation (Max) |
2.5W Ta 63W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
76 ns |
| Turn On Delay Time |
48 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 67A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5055pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
78nC @ 4.5V |
| Rise Time |
210ns |
| Power Dissipation |
63W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
179A |
| Threshold Voltage |
1.8V |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.003Ohm |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
450A |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLR024NTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2015 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
480pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 5V |
| Drain to Source Voltage (Vdss) |
55V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vgs (Max) |
±16V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.08Ohm |
| Pulsed Drain Current-Max (IDM) |
72A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
68 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLR024ZTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
35W Tc |
| Turn Off Delay Time |
19 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Published |
2012 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
43ns |
| Vgs (Max) |
±16V |
| Power Dissipation |
35W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
58m Ω @ 9.6A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
9.9nC @ 5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
16A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.058Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
64A |
| Avalanche Energy Rating (Eas) |
25 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies AUIRLR2703TRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Turn Off Delay Time |
12 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Factory Lead Time |
16 Weeks |
| Rise Time |
140ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
23A |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain-source On Resistance-Max |
0.045Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
96A |
| Avalanche Energy Rating (Eas) |
200 mJ |
| Radiation Hardening |
No |
| Power Dissipation |
45W |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLR2908
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
120W Tc |
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Packaging |
Tube |
| Published |
2005 |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
36 ns |
| Power Dissipation |
120W |
| Fall Time (Typ) |
55 ns |
| Continuous Drain Current (ID) |
30A |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 23A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 4.5V |
| Rise Time |
95ns |
| Vgs (Max) |
±16V |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
80V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies AUIRLR3410TR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4V 10V |
| Power Dissipation (Max) |
79W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Factory Lead Time |
16 Weeks |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
105MOhm |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
26 ns |
| Power Dissipation |
79W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
7.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 5V |
| Rise Time |
53ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
17A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
100V |
| Pulsed Drain Current-Max (IDM) |
60A |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.223mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies AUIRLR3705Z
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
42A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
130W Tc |
| Turn Off Delay Time |
33 ns |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
8Ohm |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Factory Lead Time |
13 Weeks |
| Fall Time (Typ) |
70 ns |
| Continuous Drain Current (ID) |
42A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8m Ω @ 42A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
66nC @ 5V |
| Rise Time |
150ns |
| Vgs (Max) |
±16V |
| Operating Mode |
ENHANCEMENT MODE |
| Element Configuration |
Single |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
89A |
| Drain to Source Breakdown Voltage |
55V |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
130W |
| Lead Free |
Lead Free |
Infineon Technologies AUIRLS3034
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
195A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
375W Tc |
| Turn Off Delay Time |
97 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Factory Lead Time |
39 Weeks |
| Rise Time |
827ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
375W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
65 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.7m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
10315pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
162nC @ 4.5V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
355 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
195A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
40V |
| Avalanche Energy Rating (Eas) |
255 mJ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLS3034-7P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
10 Weeks |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
10990pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 4.5V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.4m Ω @ 200A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G6 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-263CB |
| Drain Current-Max (Abs) (ID) |
240A |
| Drain-source On Resistance-Max |
0.0014Ohm |
| Pulsed Drain Current-Max (IDM) |
1540A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
250 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLS3036-7P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
380W Tc |
| Turn Off Delay Time |
89 ns |
| JESD-30 Code |
R-PSSO-G6 |
| Factory Lead Time |
12 Weeks |
| Published |
2011 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Fall Time (Typ) |
170 ns |
| Continuous Drain Current (ID) |
240A |
| Case Connection |
DRAIN |
| Turn On Delay Time |
81 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.9m Ω @ 180A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11270pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
160nC @ 4.5V |
| Rise Time |
540ns |
| Vgs (Max) |
±16V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
380W |
| Threshold Voltage |
1V |
| JEDEC-95 Code |
TO-263CB |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
60V |
| Avalanche Energy Rating (Eas) |
300 mJ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLS4030
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
370W Tc |
| Turn Off Delay Time |
110 ns |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Contact Plating |
Tin |
| Published |
2011 |
| Series |
Automotive, AEC-Q101, HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
330ns |
| Vgs (Max) |
±16V |
| Power Dissipation |
370W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
74 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.3m Ω @ 110A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11360pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 4.5V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
170 ns |
| Continuous Drain Current (ID) |
180A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
100V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies AUIRLS4030-7P
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
190A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
370W Tc |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, HEXFET® |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G6 |
| Mount |
Surface Mount |
| Contact Plating |
Tin |
| Continuous Drain Current (ID) |
190A |
| Threshold Voltage |
1V |
| Turn On Delay Time |
53 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.9m Ω @ 110A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
11490pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 4.5V |
| Rise Time |
160ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
87 ns |
| Power Dissipation |
370W |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0039Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Avalanche Energy Rating (Eas) |
320 mJ |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
DRAIN |
| Lead Free |
Lead Free |