Manufacturer	Infineon Technologies
Max Operating Temperature	175°C
Mount	Through Hole
Mounting Type	Through Hole
Supplier Device Package	TO-262
Current - Continuous Drain (Id) @ 25℃	195A Tc
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Power Dissipation (Max)	380W Tc
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Factory Lead Time	10 Weeks
Power Dissipation	380W
Min Operating Temperature	-55°C
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.4mOhm @ 165A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11210pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	140nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±16V
Continuous Drain Current (ID)	195A
Drain to Source Breakdown Voltage	60V
Input Capacitance	11.21nF
Drain to Source Resistance	1.9mOhm
Rds On Max	2.4 mΩ
RoHS Status	RoHS Compliant

Manufacturer	Infineon Technologies
Packaging	Tube
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	42A Tc
Number of Elements	1
Power Dissipation (Max)	140W Tc
Turn Off Delay Time	33 ns
Element Configuration	Single
Factory Lead Time	11 Weeks
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA-LOW RESISTANCE
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Operating Temperature	-55°C~175°C TJ
Operating Mode	ENHANCEMENT MODE
Continuous Drain Current (ID)	63A
Threshold Voltage	1V
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	48nC @ 4.5V
Rise Time	110ns
Fall Time (Typ)	48 ns
Power Dissipation	140W
Case Connection	DRAIN
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	42A

Manufacturer	Infineon Technologies
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Current - Continuous Drain (Id) @ 25℃	18A Tc
Drive Voltage (Max Rds On, Min Rds On)	4V 10V
Power Dissipation (Max)	3.8W Ta 45W Tc
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	60m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 5V
Drain to Source Voltage (Vdss)	55V
Vgs (Max)	±16V
Continuous Drain Current (ID)	18A
RoHS Status	ROHS3 Compliant

Manufacturer	Infineon Technologies
Operating Temperature	-55°C~175°C TJ
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Max Power Dissipation	80W
Factory Lead Time	13 Weeks
Packaging	Tube
Published	2003
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Turn Off Delay Time	25 ns
Element Configuration	Single
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	55V
Rise Time	160ns
Drain to Source Voltage (Vdss)	55V
Vgs (Max)	±16V
Fall Time (Typ)	42 ns
Continuous Drain Current (ID)	51A
Threshold Voltage	1V
Power Dissipation	80W
Turn On Delay Time	14 ns
Input Capacitance	1.62nF
Drain to Source Resistance	13.5mOhm
Height	9.65mm
Length	10.67mm
Width	4.83mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

Discrete Semiconductors