Showing 2197–2208 of 15245 results
Infineon Technologies BAR6404E6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
4 Weeks |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
150V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
100mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
BAR64-04 |
| Element Configuration |
Dual |
| Diode Type |
PIN – 1 Pair Series Connection |
| Power Dissipation |
250mW |
| Forward Current |
100mA |
| Forward Voltage |
1.1V |
| Reverse Recovery Time |
1.55 μs |
| Capacitance @ Vr, F |
0.35pF @ 20V 1MHz |
| Reverse Voltage |
150V |
| Resistance @ If, F |
1.35Ohm @ 100mA 100MHz |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BAR66E6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Diode Element Material |
SILICON |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Pbfree Code |
yes |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Type |
Switch |
| Resistance |
1.8Ohm |
| Max Operating Temperature |
125°C |
| Min Operating Temperature |
-55°C |
| HTS Code |
8541.10.00.80 |
| Voltage - Rated DC |
150V |
| Contact Plating |
Tin |
| Factory Lead Time |
4 Weeks |
| Forward Voltage |
1.2V |
| Max Reverse Voltage (DC) |
150V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
BAR66 |
| Qualification Status |
Not Qualified |
| Number of Elements |
2 |
| Diode Type |
PIN – 1 Pair Series Connection |
| Power Dissipation |
250mW |
| Output Current |
200mA |
| Forward Current |
200mA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Max Repetitive Reverse Voltage (Vrrm) |
150V |
| Capacitance @ Vr, F |
0.6pF @ 35V 1MHz |
| Reverse Voltage |
150V |
| Resistance @ If, F |
1.8Ohm @ 5mA 100MHz |
| Diode Capacitance-Max |
0.6pF |
| Minority Carrier Lifetime-Nom |
0.7 µs |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Current Rating |
200mA |
| Lead Free |
Lead Free |
Infineon Technologies BAR8802VH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
yes |
| Mount |
Surface Mount |
| Package / Case |
SC-79, SOD-523 |
| Number of Pins |
2 |
| Diode Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Terminal Form |
FLAT |
| Contact Plating |
Tin |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Type |
Switch |
| HTS Code |
8541.10.00.80 |
| Terminal Position |
DUAL |
| JESD-609 Code |
e3 |
| Base Part Number |
BAR88 |
| Reverse Recovery Time |
500 ns |
| Capacitance @ Vr, F |
0.4pF @ 1V 1MHz |
| Max Current Rating |
100mA |
| Element Configuration |
Single |
| Diode Type |
PIN – Single |
| Power Dissipation |
250mW |
| Forward Current |
100mA |
| Halogen Free |
Halogen Free |
| Forward Voltage |
1.2V |
| Pin Count |
2 |
| Number of Elements |
1 |
| Reverse Voltage |
80V |
| Frequency Band |
ULTRA HIGH FREQUENCY |
| Resistance @ If, F |
600mOhm @ 10mA 100MHz |
| Diode Capacitance-Max |
0.4pF |
| Minority Carrier Lifetime-Nom |
0.5 μs |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BAT1503WE6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Package / Case |
SC-76, SOD-323 |
| Number of Pins |
2 |
| Diode Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Terminal Form |
GULL WING |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.10.00.60 |
| Voltage - Rated DC |
4V |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
5 Weeks |
| Halogen Free |
Not Halogen Free |
| Base Part Number |
BAT15 |
| Polarity |
Standard |
| Max Current Rating |
110mA |
| Power Dissipation-Max |
100mW |
| Element Configuration |
Single |
| Diode Type |
Schottky – Single |
| Forward Current |
110mA |
| Forward Voltage |
230mV |
| Max Repetitive Reverse Voltage (Vrrm) |
4V |
| Current Rating |
110mA |
| Capacitance @ Vr, F |
0.35pF @ 0V 1MHz |
| Frequency Band |
X B |
| Diode Capacitance-Max |
0.35pF |
| Type of Schottky Barrier |
LOW BARRIER |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Number of Elements |
1 |
| Lead Free |
Lead Free |
Infineon Technologies BAT6804E6327HTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Diode Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Voltage - Rated DC |
8V |
| Factory Lead Time |
4 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.10.00.60 |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Forward Current |
130mA |
| Forward Voltage |
318mV |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
BAT68-04 |
| Number of Elements |
2 |
| Max Current Rating |
130mA |
| Power Dissipation-Max |
150mW |
| Element Configuration |
Dual |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Current Rating |
130mA |
| Peak Reverse Current |
100nA |
| Max Repetitive Reverse Voltage (Vrrm) |
8V |
| Capacitance @ Vr, F |
1pF @ 0V 1MHz |
| Resistance @ If, F |
10Ohm @ 5mA 10kHz |
| Diode Capacitance-Max |
1pF |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSA223SP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-75, SOT-416 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
390mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250mW Ta |
| Voltage - Rated DC |
-20V |
| Mount |
Surface Mount |
| Published |
2002 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.2 Ω @ 390mA, 4.5V |
| Current Rating |
-390mA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
250mW |
| FET Type |
P-Channel |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
1.2V @ 1.5μA |
| Input Capacitance (Ciss) (Max) @ Vds |
56pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
0.62nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
390mA |
| Gate to Source Voltage (Vgs) |
12V |
| Feedback Cap-Max (Crss) |
22 pF |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSB012N03LX3 G
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Package / Case |
3-WDSON |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
39A Ta 180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
2.8W Ta 89W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| HTS Code |
8541.29.00.95 |
| Terminal Position |
BOTTOM |
| Published |
2009 |
| Peak Reflow Temperature (Cel) |
260 |
| Rds On (Max) @ Id, Vgs |
1.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-MBCC-N3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
16900pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
169nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
39A |
| Drain-source On Resistance-Max |
0.0012Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
290 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSB028N06NN3GXUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pin Count |
3 |
| Package / Case |
3-WDSON |
| Surface Mount |
YES |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta 90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 78W Tc |
| Turn Off Delay Time |
38 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2012 |
| Series |
OptiMOS™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Silver/Nickel (Ag/Ni) |
| Terminal Position |
BOTTOM |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
26 Weeks |
| Rise Time |
9ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
78W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.8m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 102μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
12000pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
143nC @ 10V |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-MBCC-N3 |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
90A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.0028Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
360A |
| Avalanche Energy Rating (Eas) |
590 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Infineon Technologies BSB053N03LP G
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2009 |
| Package / Case |
3-WDSON |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Ta 71A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.3W Ta 42W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
BOTTOM |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Rds On (Max) @ Id, Vgs |
5.3m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Pin Count |
3 |
| JESD-30 Code |
R-MBCC-N3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
17A |
| Drain-source On Resistance-Max |
0.0053Ohm |
| Pulsed Drain Current-Max (IDM) |
284A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
75 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSB165N15NZ3GXUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-WDSON |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta 45A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 78W Tc |
| Turn Off Delay Time |
17 ns |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
26 Weeks |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Silver/Nickel (Ag/Ni) |
| Terminal Position |
BOTTOM |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 110μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 75V |
| JESD-30 Code |
R-MBCC-N3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.8W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16.5m Ω @ 30A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
9A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
9A |
| Avalanche Energy Rating (Eas) |
440 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSB280N15NZ3GXUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
3-WDSON |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta 30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.8W Ta 57W Tc |
| Turn Off Delay Time |
16 ns |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
26 Weeks |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e4 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Silver/Nickel (Ag/Ni) |
| Terminal Position |
BOTTOM |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Rise Time |
6ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 60μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 75V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
150V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.028Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
120 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSC010NE2LSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
26 Weeks |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PG-TDSON-8-7 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta 96W Tc |
| Power Dissipation |
96W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C |
39A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Rise Time |
6ns |
| Drain to Source Voltage (Vdss) |
25V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
39A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Resistance |
800μOhm |
| RoHS Status |
ROHS3 Compliant |