Showing 2245–2256 of 15245 results
Infineon Technologies BSC440N10NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
13 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PG-TDSON-8-1 |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Ta 18A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation |
29W |
| Factory Lead Time |
26 Weeks |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Power Dissipation (Max) |
29W Tc |
| Turn On Delay Time |
9 ns |
| Threshold Voltage |
2.7mV |
| Gate to Source Voltage (Vgs) |
20V |
| Vgs(th) (Max) @ Id |
3.5V @ 12μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
810pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
10.8nC @ 10V |
| Rise Time |
3ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
18A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
44mOhm @ 12A, 10V |
| Max Dual Supply Voltage |
100V |
| Drain to Source Breakdown Voltage |
100V |
| Input Capacitance |
810pF |
| Max Junction Temperature (Tj) |
150°C |
| Drain to Source Resistance |
44mOhm |
| Rds On Max |
44 mΩ |
| Height |
1.1mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC500N20NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2008 |
| JESD-30 Code |
R-PDSO-F5 |
| Factory Lead Time |
26 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Series |
OptiMOS™ |
| Number of Elements |
1 |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
5ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 60μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1580pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C |
24A Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
96W Tc |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
24A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
200V |
| Drain-source On Resistance-Max |
0.05Ohm |
| Pulsed Drain Current-Max (IDM) |
97A |
| Avalanche Energy Rating (Eas) |
120 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSC600N25NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Qualification Status |
Not Qualified |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Reach Compliance Code |
not_compliant |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-F5 |
| Contact Plating |
Tin |
| Factory Lead Time |
26 Weeks |
| Current - Continuous Drain (Id) @ 25°C |
25A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
125W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2350pF @ 100V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Elements |
1 |
| Rise Time |
10ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
250V |
| Drain-source On Resistance-Max |
0.06Ohm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation-Max |
125W Tc |
| Lead Free |
Contains Lead |
Infineon Technologies BSC886N03LSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Ta 65A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.5W Ta 39W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Delay Time |
18 ns |
| JESD-30 Code |
R-PDSO-N5 |
| Rise Time |
3.2ns |
| Drain to Source Voltage (Vdss) |
30V |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.2 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2100pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
65A |
| Threshold Voltage |
2.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0092Ohm |
| Pulsed Drain Current-Max (IDM) |
260A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
20 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSF024N03LT3GXUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Package / Case |
3-WDSON |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Ta 106A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.2W Ta 42W Tc |
| Terminal Position |
BOTTOM |
| Turn Off Delay Time |
29 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
5500pF @ 15V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation |
2.2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5.7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs |
71nC @ 10V |
| Rise Time |
5.6ns |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.8 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Radiation Hardening |
No |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BSL296SNH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
12 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
152.7pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PDSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
460m Ω @ 1.26A, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 100μA |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
4nC @ 5V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.4A |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
0.56Ohm |
| Pulsed Drain Current-Max (IDM) |
5.6A |
| Avalanche Energy Rating (Eas) |
15 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSL305SPEH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
939pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PDSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
45m Ω @ 5.3A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 20μA |
| Halogen Free |
Halogen Free |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
5.3A |
| Max Dual Supply Voltage |
-30V |
| Drain-source On Resistance-Max |
0.045Ohm |
| Pulsed Drain Current-Max (IDM) |
21.2A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Lead Free |
Infineon Technologies BSL373SNH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
12 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
265pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PDSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
230m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 218μA |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
9.3nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
2A |
| Max Dual Supply Voltage |
100V |
| Drain Current-Max (Abs) (ID) |
2A |
| Drain-source On Resistance-Max |
0.23Ohm |
| Feedback Cap-Max (Crss) |
21 pF |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSL606SNH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Factory Lead Time |
10 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
DUAL |
| Published |
2012 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
657pF @ 25V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
2W Ta |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 15μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Elements |
1 |
| Current - Continuous Drain (Id) @ 25°C |
4.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
5.6nC @ 5V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4.5A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSL716SNH6327XTSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Additional Feature |
AVALANCHE RATED |
| Factory Lead Time |
12 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
315pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PDSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 218μA |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
13.1nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
2.5A |
| Max Dual Supply Voltage |
75V |
| Drain-source On Resistance-Max |
0.15Ohm |
| Pulsed Drain Current-Max (IDM) |
10A |
| Avalanche Energy Rating (Eas) |
33 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies BSM100GB120DLCHOSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
UNSPECIFIED |
| Package / Case |
Module |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
100A |
| Number of Elements |
2 |
| Operating Temperature |
-40°C~125°C |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
7 |
| ECCN Code |
EAR99 |
| Terminal Position |
UPPER |
| Mounting Type |
Chassis Mount |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Pin Count |
7 |
| JESD-30 Code |
R-XUFM-X7 |
| Qualification Status |
Not Qualified |
| Configuration |
Half Bridge |
| Case Connection |
ISOLATED |
| Power - Max |
830W |
| Polarity/Channel Type |
N-CHANNEL |
| Input |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
190 ns |
| Turn Off Time-Nom (toff) |
650 ns |
| NTC Thermistor |
Yes |
| RoHS Status |
ROHS3 Compliant |