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Discrete Semiconductors
Infineon Technologies BSR606NH6327XTSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Power Dissipation (Max) |
500mW Ta |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
59 |
Current - Continuous Drain (Id) @ 25℃ |
2.3A Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
ECCN Code |
EAR99 |
Factory Lead Time |
12 Weeks |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
Automotive, AEC-Q101, OptiMOS™ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Elements |
1 |
Terminal Finish |
Tin (Sn) |
Input Capacitance (Ciss) (Max) @ Vds |
657pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
5.6nC @ 5V |
Element Configuration |
Single |
Power Dissipation |
500mW |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
60m Ω @ 2.3A, 10V |
Vgs(th) (Max) @ Id |
2.3V @ 15μA |
Halogen Free |
Halogen Free |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
2.3A |
Threshold Voltage |
1.8V |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
60V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies BSS123E6327
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
170mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
360mW Ta |
Voltage - Rated DC |
100V |
Mount |
Surface Mount |
Published |
1999 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Operating Temperature |
-55°C~150°C TJ |
Terminal Position |
DUAL |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
6 Ω @ 170mA, 10V |
Current Rating |
170mA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
360mW |
FET Type |
N-Channel |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Vgs(th) (Max) @ Id |
1.8V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds |
69pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
2.67nC @ 10V |
Rise Time |
5ns |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
170mA |
Gate to Source Voltage (Vgs) |
20V |
Feedback Cap-Max (Crss) |
6 pF |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead |
Infineon Technologies BSS123NH6327XTSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2012 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation-Max |
500mW Ta |
Factory Lead Time |
10 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Part Status |
Active |
Element Configuration |
Single |
Fall Time (Typ) |
22 ns |
Turn-Off Delay Time |
7.4 ns |
Turn On Delay Time |
2.3 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
6 Ω @ 190mA, 10V |
Vgs(th) (Max) @ Id |
1.8V @ 13μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
20.9pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
190mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
0.9nC @ 10V |
Rise Time |
3.2ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
500mW |
Continuous Drain Current (ID) |
190mA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
100V |
Drain-source On Resistance-Max |
6Ohm |
Drain to Source Breakdown Voltage |
100V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.1mm |
Length |
2.9mm |
Width |
1.3mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies BSS127 E6327
In stock
Manufacturer |
Infineon Technologies |
---|---|
Terminal Form |
GULL WING |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
21mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
500mW Ta |
Packaging |
Tape & Reel (TR) |
Published |
2007 |
Operating Temperature |
-55°C~150°C TJ |
Series |
SIPMOS® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Mounting Type |
Surface Mount |
Vgs(th) (Max) @ Id |
2.6V @ 8μA |
Input Capacitance (Ciss) (Max) @ Vds |
28pF @ 25V |
Pin Count |
3 |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
500 Ω @ 16mA, 10V |
Reach Compliance Code |
compliant |
Peak Reflow Temperature (Cel) |
260 |
Gate Charge (Qg) (Max) @ Vgs |
1nC @ 10V |
Drain to Source Voltage (Vdss) |
600V |
Vgs (Max) |
±20V |
Drain Current-Max (Abs) (ID) |
0.021A |
Drain-source On Resistance-Max |
600Ohm |
DS Breakdown Voltage-Min |
600V |
Feedback Cap-Max (Crss) |
1.5 pF |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
RoHS Status |
RoHS Compliant |
Infineon Technologies BSS127H6327XTSA2
In stock
Manufacturer |
Infineon Technologies |
---|---|
Number of Elements |
1 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2010 |
Series |
SIPMOS® |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Power Dissipation |
500mW |
Turn On Delay Time |
6.1 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
500 Ω @ 16mA, 10V |
Vgs(th) (Max) @ Id |
2.6V @ 8μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
28pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
21mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
1nC @ 10V |
Rise Time |
9.7ns |
Element Configuration |
Single |
Power Dissipation-Max |
500mW Ta |
Turn-Off Delay Time |
14 ns |
Continuous Drain Current (ID) |
21mA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
600V |
Drain-source On Resistance-Max |
600Ohm |
Height |
1mm |
Length |
2.9mm |
Width |
1.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Lead Free |
Infineon Technologies BSS131E6327
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
1999 |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
110mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
360mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Terminal Position |
DUAL |
Mount |
Surface Mount |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC |
240V |
Packaging |
Tape & Reel (TR) |
Terminal Form |
GULL WING |
Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
Vgs(th) (Max) @ Id |
1.8V @ 56μA |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Voltage |
240V |
Current |
1A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
360mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Reach Compliance Code |
unknown |
Current Rating |
100mA |
Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
Rise Time |
8ns |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
110mA |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
26Ohm |
Feedback Cap-Max (Crss) |
5 pF |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead |
Infineon Technologies BSS131H6327XTSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Part Status |
Active |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Pin Count |
3 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Voltage |
240V |
Power Dissipation-Max |
360mW Ta |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Threshold Voltage |
1.4V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
Vgs(th) (Max) @ Id |
1.8V @ 56μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
110mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
Rise Time |
3.1ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
13.7 ns |
Continuous Drain Current (ID) |
100mA |
Turn On Delay Time |
3.3 ns |
Power Dissipation |
360mW |
Max Dual Supply Voltage |
240V |
Drain to Source Breakdown Voltage |
240V |
Dual Supply Voltage |
240V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
1.4 V |
Feedback Cap-Max (Crss) |
4.2 pF |
Height |
1.1mm |
Width |
3.05mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
Infineon Technologies BSS138N E6908
In stock
Manufacturer |
Infineon Technologies |
---|---|
Series |
SIPMOS® |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
360mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2007 |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Obsolete |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.5 Ω @ 230mA, 10V |
Vgs(th) (Max) @ Id |
1.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
41pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
1.4nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies BSS138NH6433XTMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Turn Off Delay Time |
6.7 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
HTS Code |
8541.21.00.95 |
Power Dissipation (Max) |
360mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2009 |
Series |
SIPMOS™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
1.4nC @ 10V |
Terminal Form |
GULL WING |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Turn On Delay Time |
2.3 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.5 Ω @ 230mA, 10V |
Vgs(th) (Max) @ Id |
1.4V @ 26μA |
Input Capacitance (Ciss) (Max) @ Vds |
41pF @ 25V |
Rise Time |
3ns |
Drain to Source Voltage (Vdss) |
60V |
Terminal Position |
DUAL |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
230mA |
Gate to Source Voltage (Vgs) |
20V |
DS Breakdown Voltage-Min |
60V |
Height |
1mm |
Length |
2.9mm |
Width |
1.3mm |
RoHS Status |
ROHS3 Compliant |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Lead Free |
Lead Free |
Infineon Technologies BSS138NL6433HTMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Supplier Device Package |
SOT-23-3 |
Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
360mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2011 |
Series |
SIPMOS® |
Mount |
Surface Mount |
Max Operating Temperature |
150°C |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Min Operating Temperature |
-55°C |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
3.5Ohm @ 230mA, 10V |
Vgs(th) (Max) @ Id |
1.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
41pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
1.4nC @ 10V |
Drain to Source Voltage (Vdss) |
60V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
230mA |
Input Capacitance |
41pF |
Rds On Max |
3.5 Ω |
RoHS Status |
RoHS Compliant |
Infineon Technologies BSS139H6327XTSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Factory Lead Time |
10 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Pin Count |
3 |
Number of Elements |
1 |
Series |
SIPMOS® |
Number of Channels |
1 |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
40mA |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
14 Ω @ 100μA, 10V |
Vgs(th) (Max) @ Id |
1V @ 56μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
76pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
100mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 5V |
Rise Time |
5.4ns |
Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
Power Dissipation-Max |
360mW Ta |
Power Dissipation |
360mW |
Threshold Voltage |
-1.4V |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
250V |
Dual Supply Voltage |
250V |
FET Feature |
Depletion Mode |
Nominal Vgs |
-1.4 V |
Width |
3.05mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies BSS139L6906HTSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Supplier Device Package |
SOT-23-3 |
Current - Continuous Drain (Id) @ 25℃ |
100mA Ta |
Drive Voltage (Max Rds On, Min Rds On) |
0V 10V |
Power Dissipation (Max) |
360mW Ta |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
SIPMOS® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
14Ohm @ 0.1mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 56μA |
Input Capacitance (Ciss) (Max) @ Vds |
76pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 5V |
Drain to Source Voltage (Vdss) |
250V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
100mA |
Input Capacitance |
76pF |
FET Feature |
Depletion Mode |
Rds On Max |
14 Ω |
RoHS Status |
RoHS Compliant |