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Discrete Semiconductors
Infineon Technologies BSZ0501NSIATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
25A Ta 40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Power Dissipation (Max) |
2.1W Ta 50W Tc |
Published |
2013 |
Series |
OptiMOS™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Mount |
Surface Mount |
Factory Lead Time |
18 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Halogen Free |
Halogen Free |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
40A |
Max Dual Supply Voltage |
30V |
Drain Current-Max (Abs) (ID) |
25A |
Drain-source On Resistance-Max |
0.0025Ohm |
Pulsed Drain Current-Max (IDM) |
160A |
Avalanche Energy Rating (Eas) |
40 mJ |
RoHS Status |
ROHS3 Compliant |
JESD-30 Code |
S-PDSO-N3 |
Lead Free |
Contains Lead |
Infineon Technologies BSZ0502NSIATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
22A Ta 40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Power Dissipation (Max) |
2.1W Ta 43W Tc |
Published |
2013 |
Series |
OptiMOS™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Mount |
Surface Mount |
Factory Lead Time |
18 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Halogen Free |
Halogen Free |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
40A |
Max Dual Supply Voltage |
30V |
Drain Current-Max (Abs) (ID) |
22A |
Drain-source On Resistance-Max |
0.0033Ohm |
Pulsed Drain Current-Max (IDM) |
160A |
Avalanche Energy Rating (Eas) |
30 mJ |
RoHS Status |
ROHS3 Compliant |
JESD-30 Code |
S-PDSO-N3 |
Lead Free |
Contains Lead |
Infineon Technologies BSZ058N03LSGATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2011 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Number of Elements |
1 |
Part Status |
Active |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
8 |
JESD-30 Code |
R-PDSO-N5 |
Qualification Status |
Not Qualified |
Mount |
Surface Mount |
Factory Lead Time |
18 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
Power Dissipation-Max |
2.1W Ta 45W Tc |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
Turn On Delay Time |
4.6 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
5.8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
15A Ta 40A Tc |
Rise Time |
3.6ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Vgs (Max) |
±20V |
Fall Time (Typ) |
3.2 ns |
Turn-Off Delay Time |
19 ns |
Continuous Drain Current (ID) |
15A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
30V |
Drain Current-Max (Abs) (ID) |
40A |
Avalanche Energy Rating (Eas) |
55 mJ |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Operating Mode |
ENHANCEMENT MODE |
Lead Free |
Contains Lead |
Infineon Technologies BSZ058N03MSGATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
14A Ta 40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.1W Ta 45W Tc |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
10 Weeks |
Published |
2011 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Operating Temperature |
-55°C~150°C TJ |
Reach Compliance Code |
not_compliant |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 15V |
JESD-30 Code |
R-PDSO-N5 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
5m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
8 |
Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
Rise Time |
3.8ns |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
14A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
30V |
Drain Current-Max (Abs) (ID) |
40A |
Drain-source On Resistance-Max |
0.0064Ohm |
Avalanche Energy Rating (Eas) |
55 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
Infineon Technologies BSZ060NE2LSATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
12A Ta 40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.1W Ta 26W Tc |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Turn Off Delay Time |
11 ns |
Published |
2013 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Contact Plating |
Tin |
Factory Lead Time |
18 Weeks |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 12V |
JESD-30 Code |
S-PDSO-N3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
Turn On Delay Time |
2.5 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Gate Charge (Qg) (Max) @ Vgs |
9.1nC @ 10V |
Rise Time |
2.2ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
1.8 ns |
Continuous Drain Current (ID) |
12A |
Threshold Voltage |
2V |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
25V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Pin Count |
8 |
Lead Free |
Contains Lead |
Infineon Technologies BSZ065N06LS5ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
18 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Turn Off Delay Time |
14 ns |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Reach Compliance Code |
not_compliant |
Number of Channels |
1 |
Power Dissipation |
2.1W |
Turn On Delay Time |
5 ns |
Drain to Source Voltage (Vdss) |
60V |
Continuous Drain Current (ID) |
14A |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Max Junction Temperature (Tj) |
150°C |
Drain to Source Resistance |
5.4mOhm |
Height |
1.1mm |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ067N06LS3GATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
18 Weeks |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Series |
OptiMOS™ |
Pin Count |
8 |
Vgs(th) (Max) @ Id |
2.2V @ 35μA |
Halogen Free |
Halogen Free |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max |
2.1W Ta 69W Tc |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
6.7m Ω @ 20A, 10V |
JESD-30 Code |
S-PDSO-N5 |
Qualification Status |
Not Qualified |
Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 30V |
Current - Continuous Drain (Id) @ 25°C |
14A Ta 20A Tc |
Gate Charge (Qg) (Max) @ Vgs |
67nC @ 10V |
Rise Time |
26ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
14A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
60V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
Infineon Technologies BSZ075N08NS5ATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
OptiMOS™ |
Power Dissipation-Max |
69W Tc |
Factory Lead Time |
18 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
S-PDSO-N3 |
Number of Elements |
1 |
Pbfree Code |
yes |
Element Configuration |
Single |
Gate Charge (Qg) (Max) @ Vgs |
29.5nC @ 10V |
Rise Time |
4ns |
Case Connection |
DRAIN |
Turn On Delay Time |
10 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.5m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3.8V @ 36μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
2080pF @ 40V |
Current - Continuous Drain (Id) @ 25°C |
40A Tc |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
69W |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
4 ns |
Turn-Off Delay Time |
19 ns |
Continuous Drain Current (ID) |
40A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
80V |
Drain-source On Resistance-Max |
0.0075Ohm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
Infineon Technologies BSZ076N06NS3GATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2009 |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.1W Ta 69W Tc |
Turn Off Delay Time |
20 ns |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Packaging |
Tape & Reel (TR) |
Reach Compliance Code |
not_compliant |
Vgs(th) (Max) @ Id |
4V @ 35μA |
Halogen Free |
Halogen Free |
JESD-30 Code |
S-PDSO-N5 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
Turn On Delay Time |
15 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.6m Ω @ 20A, 10V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
8 |
Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
Rise Time |
40ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
5 ns |
Continuous Drain Current (ID) |
20A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
60V |
Drain-source On Resistance-Max |
0.0076Ohm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
Infineon Technologies BSZ0901NSIATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
25A Ta 40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.1W Ta 69W Tc |
Terminal Form |
NO LEAD |
Factory Lead Time |
18 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Turn Off Delay Time |
27 ns |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Halogen Free |
Halogen Free |
Pin Count |
8 |
JESD-30 Code |
R-PDSO-N3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
Turn On Delay Time |
5 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
2.1m Ω @ 20A, 10V |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
Rise Time |
7.2ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
4.6 ns |
Continuous Drain Current (ID) |
25A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
30V |
FET Feature |
Schottky Diode (Body) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |
Infineon Technologies BSZ0902NSATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Current - Continuous Drain (Id) @ 25℃ |
19A Ta 40A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.1W Ta 48W Tc |
Terminal Finish |
Tin (Sn) |
Turn Off Delay Time |
21 ns |
Packaging |
Tape & Reel (TR) |
Published |
2013 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Mount |
Surface Mount |
Factory Lead Time |
18 Weeks |
Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
Reach Compliance Code |
not_compliant |
Power Dissipation |
2.1W |
Turn On Delay Time |
4.2 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
2.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 15V |
Rise Time |
5.2ns |
Vgs (Max) |
±20V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Fall Time (Typ) |
3.6 ns |
Continuous Drain Current (ID) |
19A |
Threshold Voltage |
2V |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
30V |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Lead Free |
Contains Lead |
Infineon Technologies BSZ0909NSATMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Number of Pins |
8 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
9A Ta 36A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Number of Elements |
1 |
Power Dissipation (Max) |
2.1W Ta 25W Tc |
Turn Off Delay Time |
16 ns |
Reach Compliance Code |
not_compliant |
Factory Lead Time |
18 Weeks |
Published |
2013 |
Series |
OptiMOS™ |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
8 |
Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
Rise Time |
2.2ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
ENHANCEMENT MODE |
Case Connection |
DRAIN |
Turn On Delay Time |
4.5 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
12m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
1310pF @ 15V |
JESD-30 Code |
S-PDSO-N5 |
Qualification Status |
Not Qualified |
Drain to Source Voltage (Vdss) |
34V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
2 ns |
Continuous Drain Current (ID) |
36A |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
30V |
Drain-source On Resistance-Max |
0.012Ohm |
Pulsed Drain Current-Max (IDM) |
144A |
DS Breakdown Voltage-Min |
34V |
Avalanche Energy Rating (Eas) |
9 mJ |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |