Showing 2389–2400 of 15245 results

Discrete Semiconductors

Infineon Technologies BSZ0501NSIATMA1

In stock

SKU: BSZ0501NSIATMA1-11
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

25A Ta 40A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Power Dissipation (Max)

2.1W Ta 50W Tc

Published

2013

Series

OptiMOS™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Position

DUAL

Terminal Form

NO LEAD

Mount

Surface Mount

Factory Lead Time

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Halogen Free

Halogen Free

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Vgs (Max)

±20V

Continuous Drain Current (ID)

40A

Max Dual Supply Voltage

30V

Drain Current-Max (Abs) (ID)

25A

Drain-source On Resistance-Max

0.0025Ohm

Pulsed Drain Current-Max (IDM)

160A

Avalanche Energy Rating (Eas)

40 mJ

RoHS Status

ROHS3 Compliant

JESD-30 Code

S-PDSO-N3

Lead Free

Contains Lead

Infineon Technologies BSZ0502NSIATMA1

In stock

SKU: BSZ0502NSIATMA1-11
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

22A Ta 40A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Power Dissipation (Max)

2.1W Ta 43W Tc

Published

2013

Series

OptiMOS™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Position

DUAL

Terminal Form

NO LEAD

Mount

Surface Mount

Factory Lead Time

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Halogen Free

Halogen Free

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Vgs (Max)

±20V

Continuous Drain Current (ID)

40A

Max Dual Supply Voltage

30V

Drain Current-Max (Abs) (ID)

22A

Drain-source On Resistance-Max

0.0033Ohm

Pulsed Drain Current-Max (IDM)

160A

Avalanche Energy Rating (Eas)

30 mJ

RoHS Status

ROHS3 Compliant

JESD-30 Code

S-PDSO-N3

Lead Free

Contains Lead

Infineon Technologies BSZ058N03LSGATMA1

In stock

SKU: BSZ058N03LSGATMA1-11
Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2011

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Number of Elements

1

Part Status

Active

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

DUAL

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

8

JESD-30 Code

R-PDSO-N5

Qualification Status

Not Qualified

Mount

Surface Mount

Factory Lead Time

18 Weeks

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Power Dissipation-Max

2.1W Ta 45W Tc

Power Dissipation

2.1W

Case Connection

DRAIN

Turn On Delay Time

4.6 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

5.8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 15V

Current - Continuous Drain (Id) @ 25°C

15A Ta 40A Tc

Rise Time

3.6ns

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs (Max)

±20V

Fall Time (Typ)

3.2 ns

Turn-Off Delay Time

19 ns

Continuous Drain Current (ID)

15A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

Drain Current-Max (Abs) (ID)

40A

Avalanche Energy Rating (Eas)

55 mJ

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Contains Lead

Infineon Technologies BSZ058N03MSGATMA1

In stock

SKU: BSZ058N03MSGATMA1-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

14A Ta 40A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.1W Ta 45W Tc

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

10 Weeks

Published

2011

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

NO LEAD

Operating Temperature

-55°C~150°C TJ

Reach Compliance Code

not_compliant

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 15V

JESD-30 Code

R-PDSO-N5

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.1W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

5m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

8

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Rise Time

3.8ns

Vgs (Max)

±20V

Continuous Drain Current (ID)

14A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

Drain Current-Max (Abs) (ID)

40A

Drain-source On Resistance-Max

0.0064Ohm

Avalanche Energy Rating (Eas)

55 mJ

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

Infineon Technologies BSZ060NE2LSATMA1

In stock

SKU: BSZ060NE2LSATMA1-11
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

12A Ta 40A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.1W Ta 26W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

11 ns

Published

2013

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

NO LEAD

Contact Plating

Tin

Factory Lead Time

18 Weeks

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 12V

JESD-30 Code

S-PDSO-N3

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.1W

Case Connection

DRAIN

Turn On Delay Time

2.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

6m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Gate Charge (Qg) (Max) @ Vgs

9.1nC @ 10V

Rise Time

2.2ns

Vgs (Max)

±20V

Fall Time (Typ)

1.8 ns

Continuous Drain Current (ID)

12A

Threshold Voltage

2V

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

25V

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Pin Count

8

Lead Free

Contains Lead

Infineon Technologies BSZ065N06LS5ATMA1

In stock

SKU: BSZ065N06LS5ATMA1-11
Manufacturer

Infineon Technologies

Factory Lead Time

18 Weeks

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Turn Off Delay Time

14 ns

Packaging

Tape & Reel (TR)

Published

2013

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Reach Compliance Code

not_compliant

Number of Channels

1

Power Dissipation

2.1W

Turn On Delay Time

5 ns

Drain to Source Voltage (Vdss)

60V

Continuous Drain Current (ID)

14A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Max Junction Temperature (Tj)

150°C

Drain to Source Resistance

5.4mOhm

Height

1.1mm

RoHS Status

ROHS3 Compliant

Infineon Technologies BSZ067N06LS3GATMA1

In stock

SKU: BSZ067N06LS3GATMA1-11
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Number of Pins

8

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2001

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

18 Weeks

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Position

DUAL

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Series

OptiMOS™

Pin Count

8

Vgs(th) (Max) @ Id

2.2V @ 35μA

Halogen Free

Halogen Free

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max

2.1W Ta 69W Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.1W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

6.7m Ω @ 20A, 10V

JESD-30 Code

S-PDSO-N5

Qualification Status

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 30V

Current - Continuous Drain (Id) @ 25°C

14A Ta 20A Tc

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Rise Time

26ns

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Continuous Drain Current (ID)

14A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

60V

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

Infineon Technologies BSZ075N08NS5ATMA1

In stock

SKU: BSZ075N08NS5ATMA1-11
Manufacturer

Infineon Technologies

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2013

Series

OptiMOS™

Power Dissipation-Max

69W Tc

Factory Lead Time

18 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

S-PDSO-N3

Number of Elements

1

Pbfree Code

yes

Element Configuration

Single

Gate Charge (Qg) (Max) @ Vgs

29.5nC @ 10V

Rise Time

4ns

Case Connection

DRAIN

Turn On Delay Time

10 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

7.5m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

3.8V @ 36μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

2080pF @ 40V

Current - Continuous Drain (Id) @ 25°C

40A Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

69W

Drive Voltage (Max Rds On,Min Rds On)

6V 10V

Vgs (Max)

±20V

Fall Time (Typ)

4 ns

Turn-Off Delay Time

19 ns

Continuous Drain Current (ID)

40A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

80V

Drain-source On Resistance-Max

0.0075Ohm

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

Infineon Technologies BSZ076N06NS3GATMA1

In stock

SKU: BSZ076N06NS3GATMA1-11
Manufacturer

Infineon Technologies

Published

2009

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

20A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

2.1W Ta 69W Tc

Turn Off Delay Time

20 ns

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Surface Mount

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

DUAL

Terminal Form

NO LEAD

Packaging

Tape & Reel (TR)

Reach Compliance Code

not_compliant

Vgs(th) (Max) @ Id

4V @ 35μA

Halogen Free

Halogen Free

JESD-30 Code

S-PDSO-N5

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.1W

Case Connection

DRAIN

Turn On Delay Time

15 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

7.6m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

8

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Rise Time

40ns

Vgs (Max)

±20V

Fall Time (Typ)

5 ns

Continuous Drain Current (ID)

20A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

60V

Drain-source On Resistance-Max

0.0076Ohm

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

Infineon Technologies BSZ0901NSIATMA1

In stock

SKU: BSZ0901NSIATMA1-11
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

25A Ta 40A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.1W Ta 69W Tc

Terminal Form

NO LEAD

Factory Lead Time

18 Weeks

Packaging

Tape & Reel (TR)

Published

2013

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

Turn Off Delay Time

27 ns

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Vgs(th) (Max) @ Id

2.2V @ 250μA

Halogen Free

Halogen Free

Pin Count

8

JESD-30 Code

R-PDSO-N3

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.1W

Case Connection

DRAIN

Turn On Delay Time

5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

2.1m Ω @ 20A, 10V

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Rise Time

7.2ns

Vgs (Max)

±20V

Fall Time (Typ)

4.6 ns

Continuous Drain Current (ID)

25A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

FET Feature

Schottky Diode (Body)

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

Infineon Technologies BSZ0902NSATMA1

In stock

SKU: BSZ0902NSATMA1-11
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Current - Continuous Drain (Id) @ 25℃

19A Ta 40A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.1W Ta 48W Tc

Terminal Finish

Tin (Sn)

Turn Off Delay Time

21 ns

Packaging

Tape & Reel (TR)

Published

2013

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Mount

Surface Mount

Factory Lead Time

18 Weeks

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Reach Compliance Code

not_compliant

Power Dissipation

2.1W

Turn On Delay Time

4.2 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

2.6m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 15V

Rise Time

5.2ns

Vgs (Max)

±20V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Fall Time (Typ)

3.6 ns

Continuous Drain Current (ID)

19A

Threshold Voltage

2V

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Lead Free

Contains Lead

Infineon Technologies BSZ0909NSATMA1

In stock

SKU: BSZ0909NSATMA1-11
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

9A Ta 36A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

2.1W Ta 25W Tc

Turn Off Delay Time

16 ns

Reach Compliance Code

not_compliant

Factory Lead Time

18 Weeks

Published

2013

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

DUAL

Terminal Form

NO LEAD

Operating Temperature

-55°C~150°C TJ

Pin Count

8

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Rise Time

2.2ns

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

4.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

12m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

1310pF @ 15V

JESD-30 Code

S-PDSO-N5

Qualification Status

Not Qualified

Drain to Source Voltage (Vdss)

34V

Vgs (Max)

±20V

Fall Time (Typ)

2 ns

Continuous Drain Current (ID)

36A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

Drain-source On Resistance-Max

0.012Ohm

Pulsed Drain Current-Max (IDM)

144A

DS Breakdown Voltage-Min

34V

Avalanche Energy Rating (Eas)

9 mJ

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead