Showing 2401–2412 of 15245 results
Infineon Technologies BSZ096N10LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Min.) |
-55°C |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
DUAL |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
S-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain Current-Max (Abs) (ID) |
11A |
| Drain-source On Resistance-Max |
0.0096Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
82 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ12DN20NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Turn Off Delay Time |
10 ns |
| Reach Compliance Code |
not_compliant |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 100V |
| JESD-30 Code |
S-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 25μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Gate Charge (Qg) (Max) @ Vgs |
8.7nC @ 10V |
| Rise Time |
4ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
11.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
200V |
| Drain-source On Resistance-Max |
0.125Ohm |
| Pulsed Drain Current-Max (IDM) |
45A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ130N03MSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta 35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 25W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Factory Lead Time |
18 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
NO LEAD |
| Rds On (Max) @ Id, Vgs |
11.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
S-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.015Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
9 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ146N10LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ180P03NS3EGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta 39.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 40W Tc |
| Turn Off Delay Time |
20 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
ESD PROTECTED |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Contact Plating |
Tin |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2220pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.1V @ 48μA |
| Halogen Free |
Halogen Free |
| Pin Count |
8 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
39.5A |
| Threshold Voltage |
-2.5V |
| Gate to Source Voltage (Vgs) |
25V |
| Max Dual Supply Voltage |
-30V |
| Drain Current-Max (Abs) (ID) |
9A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-PDSO-F5 |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ520N15NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
no |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Power Dissipation-Max |
57W Tc |
| Factory Lead Time |
18 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Pin Count |
8 |
| JESD-30 Code |
S-PDSO-N5 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-609 Code |
e3 |
| Operating Mode |
ENHANCEMENT MODE |
| Rise Time |
5ns |
| Drive Voltage (Max Rds On,Min Rds On) |
8V 10V |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
52m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 35μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C |
21A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Power Dissipation |
57W |
| Case Connection |
DRAIN |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Turn-Off Delay Time |
10 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
150V |
| Drain-source On Resistance-Max |
0.052Ohm |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BTS121ANKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn Off Delay Time |
210 ns |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V |
| Number of Elements |
1 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Mount |
Through Hole |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Series |
TEMPFET® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Power Dissipation (Max) |
95W Tc |
| Terminal Position |
SINGLE |
| Rise Time |
110ns |
| Drain to Source Voltage (Vdss) |
100V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 9.5A, 4.5V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 25V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
95W |
| Vgs (Max) |
±10V |
| Fall Time (Typ) |
100 ns |
| Continuous Drain Current (ID) |
22A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
10V |
| Pulsed Drain Current-Max (IDM) |
88A |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BTS244Z E3062A
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
compliant |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
170W Tc |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
1999 |
| Series |
TEMPFET® |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2660pF @ 25V |
| Reference Standard |
AEC-Q101 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
35A |
| Drain-source On Resistance-Max |
0.018Ohm |
| Pulsed Drain Current-Max (IDM) |
188A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
1650 mJ |
| FET Feature |
Temperature Sensing Diode |
| JESD-30 Code |
R-PSSO-G4 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BTS244ZE3062AATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
5 |
| Supplier Device Package |
PG-TO263-5-2 |
| Weight |
1.59999g |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
170W Tc |
| Number of Channels |
1 |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
TEMPFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-40°C |
| Voltage - Rated DC |
55V |
| Current Rating |
35A |
| Turn Off Delay Time |
40 ns |
| Element Configuration |
Single |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
35A |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 130μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2660pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Rise Time |
70ns |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Power Dissipation |
170W |
| Turn On Delay Time |
15 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain to Source Breakdown Voltage |
55V |
| Input Capacitance |
2.66nF |
| FET Feature |
Temperature Sensing Diode |
| Drain to Source Resistance |
13mOhm |
| Rds On Max |
13 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BTS282Z E3180A
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2001 |
| Series |
TEMPFET® |
| Mounting Type |
Surface Mount |
| Reach Compliance Code |
compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 36A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 240μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
232nC @ 10V |
| Drain to Source Voltage (Vdss) |
49V |
| Vgs (Max) |
±20V |
| FET Feature |
Temperature Sensing Diode |
Infineon Technologies BTS282ZAKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2001 |
| Package / Case |
TO-220-7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
70 ns |
| Operating Temperature |
-40°C~175°C TJ |
| JESD-30 Code |
R-PSFM-T7 |
| Packaging |
Tube |
| Series |
TEMPFET® |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
7 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
SINGLE |
| Pin Count |
7 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain to Source Voltage (Vdss) |
49V |
| Power Dissipation |
300W |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.5m Ω @ 36A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 240μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
232nC @ 10V |
| Rise Time |
37ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
36 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0095Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
49V |
| Avalanche Energy Rating (Eas) |
2000 mJ |
| FET Feature |
Temperature Sensing Diode |
| Radiation Hardening |
No |
| Case Connection |
DRAIN |
| RoHS Status |
RoHS Compliant |
Infineon Technologies BTS282ZE3230AKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
300W Tc |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-7 |
| Number of Pins |
7 |
| Supplier Device Package |
PG-TO220-7-12 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Voltage - Rated DC |
49V |
| Factory Lead Time |
18 Weeks |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| Series |
TEMPFET® |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-40°C |
| Number of Elements |
1 |
| Current Rating |
1.7A |
| Drain to Source Voltage (Vdss) |
49V |
| Vgs (Max) |
±20V |
| Power Dissipation |
300W |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.5mOhm @ 36A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 240μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
232nC @ 10V |
| Rise Time |
37ns |
| Output Voltage |
40V |
| Number of Channels |
1 |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
49V |
| Input Capacitance |
4.8nF |
| FET Feature |
Temperature Sensing Diode |
| Drain to Source Resistance |
5.8mOhm |
| Rds On Max |
6.5 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |