Manufacturer	Infineon Technologies
Published	2002
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	600V, 15A, 82 Ω, 15V
Operating Temperature	-55°C~150°C TJ
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Mount	Through Hole
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	HIGH SPEED
Max Power Dissipation	200W
Packaging	Tube
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JEDEC-95 Code	TO-220AB
Voltage - Collector Emitter Breakdown (Max)	1200V
Element Configuration	Single
Input Type	Standard
Power - Max	200W
Transistor Application	MOTOR CONTROL
Rise Time	70ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	32A
Pin Count	3
Qualification Status	Not Qualified
Turn On Time	70 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 15A
Turn Off Time-Nom (toff)	400 ns
Current - Collector Pulsed (Icm)	64A
Td (on/off) @ 25°C	70ns/400ns
Gate-Emitter Voltage-Max	20V

Manufacturer	Infineon Technologies
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25℃	14.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	95W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	SIPMOS®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1120pF @ 25V
Drain to Source Voltage (Vdss)	200V
Vgs (Max)	±20V
RoHS Status	Non-RoHS Compliant

Manufacturer	Infineon Technologies
Packaging	Tube
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	5.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	40W Tc
Terminal Position	SINGLE
Mounting Type	Through Hole
Published	2005
Series	SIPMOS®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Operating Temperature	-55°C~150°C TJ
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	600m Ω @ 4.5A, 10V
Reach Compliance Code	compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Drain to Source Voltage (Vdss)	200V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	5.5A
Drain-source On Resistance-Max	0.6Ohm
Pulsed Drain Current-Max (IDM)	22A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	120 mJ

Manufacturer	Infineon Technologies
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	PG-TO220-3
Current - Continuous Drain (Id) @ 25℃	5.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	40W Tc
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	SIPMOS®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Drain to Source Voltage (Vdss)	200V
Vgs (Max)	±20V
Continuous Drain Current (ID)	5.5A
Input Capacitance	530pF
Rds On Max	600 mΩ
RoHS Status	ROHS3 Compliant

Discrete Semiconductors