Showing 2617–2628 of 15245 results

Discrete Semiconductors

Infineon Technologies FF600R12IS4FBOSA1

In stock

SKU: FF600R12IS4FBOSA1-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Package / Case

Module

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

600A

Number of Elements

2

Operating Temperature

-40°C~125°C

Published

2002

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Chassis Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

ECCN Code

EAR99

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Pbfree Code

no

Pin Count

11

Voltage - Collector Emitter Breakdown (Max)

1200V

Power Dissipation-Max (Abs)

3700W

Configuration

2 Independent

Case Connection

ISOLATED

Power - Max

3700W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Current - Collector Cutoff (Max)

5mA

JESD-30 Code

R-XUFM-X7

Qualification Status

Not Qualified

Turn On Time

270 ns

Vce(on) (Max) @ Vge, Ic

3.75V @ 15V, 600A

Turn Off Time-Nom (toff)

630 ns

NTC Thermistor

Yes

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

39nF @ 25V

VCEsat-Max

3.75 V

RoHS Status

RoHS Compliant

Infineon Technologies FF600R12KE4EBOSA1

In stock

SKU: FF600R12KE4EBOSA1-9
Manufacturer

Infineon Technologies

Factory Lead Time

14 Weeks

Mounting Type

Chassis Mount

Package / Case

Module

Surface Mount

NO

Current-Collector (Ic) (Max)

600A

Number of Elements

2

Operating Temperature

-40°C~150°C

Published

2016

Series

C

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

7

ECCN Code

EAR99

Additional Feature

UL APPROVED

Terminal Position

UPPER

JESD-30 Code

R-XUFM-X7

Configuration

Half Bridge

Case Connection

ISOLATED

Input

Standard

Current - Collector Cutoff (Max)

5mA

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

232 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 600A

Turn Off Time-Nom (toff)

630 ns

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

38nF @ 25V

RoHS Status

ROHS3 Compliant

Infineon Technologies FF600R12KE4PBOSA1

In stock

SKU: FF600R12KE4PBOSA1-9
Manufacturer

Infineon Technologies

Risk Rank

Details

Mounting Type

Module

Number of Pins

AG-62MM-1

Base Product Number

Infineon Technologies

Brand

1200 V

Collector-Emitter Breakdown Voltage

600 A

Current-Collector (Ic) (Max)

8

Ihs Manufacturer

Infineon

Maximum Gate Emitter Voltage

+ 150 C

Maximum Operating Temperature

Infineon Technologies

Mfr

– 40 C

Operating Temperature-Max

Tray

Package Type

FF600R12KE4P SP001603612

Pd - Power Dissipation

Active

Mount

Chassis Mount

Unit Weight

-40°C ~ 150°C (TJ)

Rohs Code

TRENCHSTOP

Operating Temperature

Tray

Packaging

C

Additional Feature

IGBTs

Qualification Status

2 Independent

Polarity/Channel Type

Standard

Input

IGBT Modules

Operating Temperature Range

5 mA

Current - Collector Cutoff (Max)

1200 V

Power Dissipation-Max (Abs)

2.2V @ 15V, 600A

Collector Current-Max (IC)

600

Continuous Collector Current

Trench Field Stop

Collector-Emitter Voltage-Max

No

Gate-Emitter Voltage-Max

38 nF @ 25 V

VCEsat-Max

IGBT Silicon Modules

Infineon Technologies FF600R12KT4HOSA1

In stock

SKU: FF600R12KT4HOSA1-9
Manufacturer

Infineon

Series

C

Package / Case

Module

Supplier Device Package

AG-62MM

Mounting Style

Chassis

Base Product Number

FF600R12

Brand

Infineon Technologies

Maximum Operating Temperature

+ 150 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Package

Tray

Package Type

AG-62MM

Product Status

Active

Operating Temperature

-40°C ~ 150°C (TJ)

Packaging

Tray

Mounting Type

Chassis Mount

Technology

Si

Subcategory

IGBTs

Configuration

2 Independent

Input

Standard

Product Type

IGBT Modules

Current - Collector Cutoff (Max)

5 mA

Voltage - Collector Emitter Breakdown (Max)

1200 V

Current - Collector (Ic) (Max)

600 A

Collector Emitter Saturation Voltage

1.75

Channel Type

N

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 600A

Continuous Collector Current

600

IGBT Type

Trench Field Stop

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

38 nF @ 25 V

Product Category

IGBT Modules

Infineon Technologies FF600R12ME4B11BPSA1

In stock

SKU: FF600R12ME4B11BPSA1-9
Manufacturer

Infineon Technologies

Number of Elements

2

Surface Mount

NO

Transistor Element Material

SILICON

Operating Temperature

'-40°C~150°C

Published

2002

Part Status

Not For New Designs

Number of Terminations

11

ECCN Code

EAR99

Additional Feature

UL RECOGNIZED

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JESD-30 Code

R-XUFM-X11

Package / Case

Module

Mounting Type

Chassis Mount

Turn On Time

310 ns

Power - Max

4050W

Transistor Application

POWER CONTROL

Halogen Free

Not Halogen Free

Polarity/Channel Type

N-CHANNEL

Input

Standard

Current - Collector Cutoff (Max)

3mA

Element Configuration

Dual

Configuration

2 Independent

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 600A

Turn Off Time-Nom (toff)

770 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

37nF @ 25V

RoHS Status

RoHS Compliant

Case Connection

ISOLATED

Lead Free

Contains Lead

Infineon Technologies FF600R12ME4B11BPSA2

In stock

SKU: FF600R12ME4B11BPSA2-9
Manufacturer

Infineon Technologies

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

AG-ECONOD

Base Product Number

FF600R12

Mfr

Infineon Technologies

Package

Tray

Product Status

Not For New Designs

Operating Temperature

-40°C ~ 150°C (TJ)

Series

EconoDUAL? 3

Configuration

2 Independent

Power Dissipation

4.05kW

Power - Max

4050 W

Input

Standard

Current - Collector Cutoff (Max)

3 mA

Voltage - Collector Emitter Breakdown (Max)

1200 V

Current - Collector (Ic) (Max)

995 A

Collector Emitter Saturation Voltage

1.75V

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 600A

Continuous Collector Current

995A

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

37 nF @ 25 V

Infineon Technologies FF600R12ME4B73BPSA1

In stock

SKU: FF600R12ME4B73BPSA1-9
Manufacturer

Infineon Technologies

Published

2002

Terminal Form

UNSPECIFIED

Terminal Position

UPPER

ECCN Code

EAR99

Number of Terminations

7

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Series

EconoDUAL™ 3

Operating Temperature

-40°C~150°C

Current-Collector (Ic) (Max)

1200A

Transistor Element Material

SILICON

Surface Mount

NO

Package / Case

Module

Mounting Type

Chassis Mount

Factory Lead Time

16 Weeks

JESD-30 Code

R-XUFM-X7

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance (Cies) @ Vce

37nF @ 25V

NTC Thermistor

Yes

IGBT Type

Trench Field Stop

Turn Off Time-Nom (toff)

770 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 600A

Turn On Time

310 ns

Current - Collector Cutoff (Max)

3mA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input

Standard

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Power - Max

20mW

Case Connection

ISOLATED

Configuration

Half Bridge

RoHS Status

ROHS3 Compliant

Infineon Technologies FF600R12ME4B73BPSA2

In stock

SKU: FF600R12ME4B73BPSA2-9
Manufacturer

Infineon

Subcategory

IGBTs

Package / Case

Module

Supplier Device Package

AG-ECONOD

Base Product Number

FF600R12

Brand

Infineon Technologies

Mfr

Infineon Technologies

Package

Tray

Product Status

Active

Operating Temperature

-40°C ~ 150°C (TJ)

Packaging

Tray

Series

EconoDUAL? 3

Mounting Type

Chassis Mount

Power - Max

20 mW

Configuration

2 Independent

Input

Standard

Product Type

IGBT Modules

Current - Collector Cutoff (Max)

3 mA

Voltage - Collector Emitter Breakdown (Max)

1200 V

Current - Collector (Ic) (Max)

600 A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 600A

Continuous Collector Current

600

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Input Capacitance (Cies) @ Vce

37 nF @ 25 V

Product Category

IGBT Modules

Infineon Technologies FF600R12ME4BOSA1

In stock

SKU: FF600R12ME4BOSA1-9
Manufacturer

Infineon Technologies

Mount

Screw

Mounting Type

Chassis Mount

Package / Case

Module

Number of Pins

11

Transistor Element Material

SILICON

Operating Temperature

'-40°C~150°C

Published

2002

Pbfree Code

no

Qualification Status

Not Qualified

Factory Lead Time

52 Weeks

Number of Terminations

7

ECCN Code

EAR99

Terminal Position

UPPER

Terminal Form

UNSPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Pin Count

11

JESD-30 Code

R-XUFM-X7

Part Status

Not For New Designs

Number of Elements

2

Current - Collector Cutoff (Max)

3mA

Power Dissipation

4.05kW

Case Connection

ISOLATED

Power - Max

4050W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Input

Standard

Max Collector Current

600A

Configuration

2 Independent

Element Configuration

Dual

Turn On Time

310 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 600A

Turn Off Time-Nom (toff)

770 ns

IGBT Type

Trench Field Stop

NTC Thermistor

Yes

Infineon Technologies FF600R12ME4CPB11BPSA1

In stock

SKU: FF600R12ME4CPB11BPSA1-9
Manufacturer

Infineon Technologies

Factory Lead Time

26 Weeks

Published

2013

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Infineon Technologies FF600R12ME4EB11BOSA1

In stock

SKU: FF600R12ME4EB11BOSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~150°C

Terminal Form

UNSPECIFIED

Terminal Position

UPPER

Additional Feature

UL RECOGNIZED

ECCN Code

EAR99

Number of Terminations

12

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Part Status

Active

Number of Elements

2

Current-Collector (Ic) (Max)

995A

Transistor Element Material

SILICON

Surface Mount

NO

Package / Case

Module

Mounting Type

Chassis Mount

Factory Lead Time

16 Weeks

JESD-30 Code

R-XUFM-X12

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance (Cies) @ Vce

37nF @ 25V

NTC Thermistor

Yes

IGBT Type

Trench Field Stop

Turn Off Time-Nom (toff)

700 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 600A

Turn On Time

340 ns

Current - Collector Cutoff (Max)

3mA

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input

Standard

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Power - Max

4050W

Case Connection

ISOLATED

Configuration

Half Bridge

RoHS Status

ROHS3 Compliant

Infineon Technologies FF600R12ME4EB11BPSA1

In stock

SKU: FF600R12ME4EB11BPSA1-9
Manufacturer

Infineon Technologies

Risk Rank

Details

Mounting Type

Module

Number of Pins

AG-ECONOD-3

Base Product Number

Infineon Technologies

Brand

1200 V

Collector-Emitter Breakdown Voltage

600 A

Current-Collector (Ic) (Max)

10

Ihs Manufacturer

Infineon

Maximum Gate Emitter Voltage

+ 150 C

Maximum Operating Temperature

Infineon Technologies

Mfr

– 40 C

Operating Temperature-Max

Tray

Package Type

FF600R12ME4E_B11 SP005422530

Pd - Power Dissipation

Not For New Designs

Mount

Chassis Mount

Operating Temperature

Tray

Unit Weight

-40°C ~ 150°C (TJ)

Packaging

EconoDUAL? 3

Additional Feature

IGBTs

Qualification Status

2 Independent

Case Connection

20 mW

Polarity/Channel Type

Standard

Input

IGBT Modules

Operating Temperature Range

3 mA

Current - Collector Cutoff (Max)

1200 V

Power Dissipation-Max (Abs)

2.1V @ 15V, 600A

Collector Current-Max (IC)

600

Continuous Collector Current

Trench Field Stop

Collector-Emitter Voltage-Max

Yes

Gate-Emitter Voltage-Max

37 nF @ 25 V

VCEsat-Max

IGBT Silicon Modules