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Discrete Semiconductors
Infineon Technologies FS75R12W2T4PBPSA1
In stock
Manufacturer |
Infineon |
---|---|
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
AG-EASY2B |
Base Product Number |
FS75R12 |
Brand |
Infineon Technologies |
Mfr |
Infineon Technologies |
Package |
Tray |
Product Status |
Active |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Packaging |
Tray |
Series |
EasyPACK? |
Subcategory |
IGBTs |
Configuration |
Full Bridge Inverter |
Power - Max |
375 W |
Input |
Standard |
Product Type |
IGBT Modules |
Current - Collector Cutoff (Max) |
1 mA |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Current - Collector (Ic) (Max) |
107 A |
Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 75A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
4.3 nF @ 25 V |
Product Category |
IGBT Modules |
Infineon Technologies FS75R12W2T7B11BOMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Configuration |
Full Bridge |
Package / Case |
Module |
Current-Collector (Ic) (Max) |
65A |
Operating Temperature |
-40°C~175°C |
Series |
EasyPACK™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Mounting Type |
Chassis Mount |
Input |
Standard |
Power - Max |
20mW |
Current - Collector Cutoff (Max) |
13μA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
1.55V @ 15V, 75A (Typ) |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
15.1nF @ 25V |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies FS75R12W2T7BPSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Pd - Power Dissipation |
Active |
Mounting Type |
Module |
Number of Pins |
AG-EASY2B |
Brand |
1.2 kV |
Collector-Emitter Breakdown Voltage |
65 A |
Maximum Gate Emitter Voltage |
+ 175 C |
Maximum Operating Temperature |
Infineon Technologies |
Mfr |
– 40 C |
Minimum Operating Temperature |
Chassis Mount |
Operating Temperature-Max |
Tray |
Mount |
Chassis Mount |
Packaging |
EasyPACK?, TRENCHSTOP? |
Unit Weight |
-40°C ~ 175°C (TJ) |
Qualification Status |
Three Phase Inverter |
Case Connection |
20 mW |
Polarity/Channel Type |
Standard |
Operating Temperature Range |
13 μA |
Current - Collector Cutoff (Max) |
1200 V |
Collector Current-Max (IC) |
65 |
Continuous Collector Current |
Trench Field Stop |
Collector-Emitter Voltage-Max |
Yes |
Gate-Emitter Voltage-Max |
15.1 nF @ 25 V |
VCEsat-Max |
IGBT Silicon Modules |
Infineon Technologies FS770R08A6P2BBPSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
39 Weeks |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Current-Collector (Ic) (Max) |
450A |
Operating Temperature |
-40°C~150°C TJ |
Series |
HybridPACK™ |
Part Status |
Active |
Configuration |
Three Phase Inverter |
Power - Max |
654W |
Input |
Standard |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
750V |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 450A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
80nF @ 50V |
Infineon Technologies FS770R08A6P2LBBPSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
39 Weeks |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Current-Collector (Ic) (Max) |
450A |
Operating Temperature |
-40°C~150°C TJ |
Series |
HybridPACK™ |
Part Status |
Active |
Configuration |
Three Phase Inverter |
Power - Max |
654W |
Input |
Standard |
Current - Collector Cutoff (Max) |
1mA |
Voltage - Collector Emitter Breakdown (Max) |
750V |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 450A |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
80nF @ 50V |
Infineon Technologies FS950R08A6P2LBBPSA1
In stock
Manufacturer |
Infineon |
---|---|
Configuration |
3 Independent |
Package / Case |
Module |
Supplier Device Package |
AG-HYBRIDD-2 |
Base Product Number |
FS950R08 |
Brand |
Infineon Technologies |
Mfr |
Infineon Technologies |
Package |
Tray |
Product Status |
Active |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Packaging |
Tray |
Series |
HybridPACK? |
Subcategory |
IGBTs |
Mounting Type |
Chassis Mount |
Power - Max |
870 W |
Power Dissipation |
870 |
Input |
Standard |
Product Type |
IGBT Modules |
Current - Collector Cutoff (Max) |
1 mA |
Voltage - Collector Emitter Breakdown (Max) |
750 V |
Current - Collector (Ic) (Max) |
450 A |
Collector Emitter Saturation Voltage |
1.1 |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 450A |
Continuous Collector Current |
450 |
IGBT Type |
Trench Field Stop |
NTC Thermistor |
Yes |
Input Capacitance (Cies) @ Vce |
80 nF @ 50 V |
Product Category |
IGBT Modules |
Infineon Technologies FT150R12KE3GB4BDLA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Terminal Form |
UNSPECIFIED |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
200A |
Number of Elements |
3 |
Operating Temperature |
-40°C~125°C |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
39 |
ECCN Code |
EAR99 |
Terminal Position |
UPPER |
Factory Lead Time |
16 Weeks |
Configuration |
3 Independent |
JESD-30 Code |
R-XUFM-X39 |
Case Connection |
ISOLATED |
Power - Max |
700W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Input |
Standard |
Current - Collector Cutoff (Max) |
5mA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
350 ns |
Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 150A |
Turn Off Time-Nom (toff) |
850 ns |
NTC Thermistor |
No |
Input Capacitance (Cies) @ Vce |
10.5nF @ 25V |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies FZ1000R33HE3BOSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Pbfree Code |
no |
JESD-30 Code |
R-XUFM-X7 |
Pin Count |
7 |
Reach Compliance Code |
compliant |
Terminal Form |
UNSPECIFIED |
Terminal Position |
UPPER |
Number of Terminations |
7 |
Configuration |
Single Switch |
Part Status |
Active |
Operating Temperature |
-40°C~150°C |
Number of Elements |
2 |
Current-Collector (Ic) (Max) |
1000A |
Transistor Element Material |
SILICON |
Surface Mount |
NO |
Package / Case |
Module |
Mounting Type |
Chassis Mount |
Power - Max |
1600W |
Vce(on) (Max) @ Vge, Ic |
3.1V @ 15V, 100A |
VCEsat-Max |
3.1 V |
Input Capacitance (Cies) @ Vce |
190nF @ 25V |
Gate-Emitter Voltage-Max |
20V |
NTC Thermistor |
No |
IGBT Type |
Trench Field Stop |
Turn Off Time-Nom (toff) |
3550 ns |
Turn On Time |
1150 ns |
Case Connection |
ISOLATED |
Power Dissipation-Max (Abs) |
9600W |
Voltage - Collector Emitter Breakdown (Max) |
3300V |
Current - Collector Cutoff (Max) |
5mA |
Input |
Standard |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
RoHS Status |
RoHS Compliant |