Showing 697–708 of 15245 results
Diodes DMP58D1LV-13
In stock
| Manufacturer |
Diodes |
|---|---|
| Technology |
MOSFET (Metal Oxide) |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
SOT-563 |
| Base Product Number |
DMP58 |
| Mfr |
Diodes Incorporated |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Power - Max |
490mW (Ta) |
| Configuration |
2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs |
8Ohm @ 100mA, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
37pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
220mA (Ta) |
| Gate Charge (Qg) (Max) @ Vgs |
1.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
50V |
| FET Feature |
Standard |
Diodes DMT32M6LDG-7
In stock
| Manufacturer |
Diodes |
|---|---|
| Technology |
MOSFET (Metal Oxide) |
| Package / Case |
8-PowerVDFN |
| Supplier Device Package |
PowerDI3333-8 (Type G) |
| Base Product Number |
DMT32 |
| Mfr |
Diodes Incorporated |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Power - Max |
1.1W (Ta) |
| Configuration |
2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs |
2.5mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 400µA |
| Input Capacitance (Ciss) (Max) @ Vds |
2101pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
21A (Ta), 47A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
15.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
30V |
| FET Feature |
Standard |
Diodes DMTH10H4M5LPSW
In stock
| Manufacturer |
Diodes |
|---|---|
| Mounting Type |
Surface Mount, Wettable Flank |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
PowerDI5060-8 (Type UX) |
| Base Product Number |
DMTH10 |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Mfr |
Diodes Incorporated |
| Power Dissipation (Max) |
4.7W (Ta), 136W (Tc) |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Technology |
MOSFET (Metal Oxide) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds |
4843 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Ta), 107A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs |
80 nC @ 10 V |
| Drain to Source Voltage (Vdss) |
100 V |
| Vgs (Max) |
±20V |
Diodes DMWS120H100SM4
In stock
| Manufacturer |
Diodes |
|---|---|
| Package / Case |
TO-247-4 |
| Mounting Style |
Through Hole |
| Channel Mode |
Enhancement |
| Id - Continuous Drain Current |
37.2 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
208 W |
| Qg - Gate Charge |
52 nC |
| Rds On - Drain-Source Resistance |
100 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
1.2 kV |
| Vgs - Gate-Source Voltage |
+ 19 V, – 8 V |
| Vgs th - Gate-Source Threshold Voltage |
3.5 V |
| Technology |
SiC |
| Number of Channels |
1 Channel |
Diodes Incorporated 2N7002A-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Pbfree Code |
yes |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Pin Count |
3 |
| Factory Lead Time |
14 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
6Ohm |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Drive Voltage (Max Rds On,Min Rds On) |
5V 10V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
540mW |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 115mA, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
23pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
180mA Ta |
| Number of Channels |
1 |
| Power Dissipation-Max |
370mW Ta |
| Turn-Off Delay Time |
33 ns |
| Continuous Drain Current (ID) |
220mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated 2N7002AQ-7
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Factory Lead Time |
14 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
180mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V |
| Power Dissipation (Max) |
370mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5 Ω @ 115mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
23pF @ 25V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180mA |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated 2N7002TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
115mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
330mW Ta |
| Turn Off Delay Time |
11 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Contact Plating |
Tin |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
7.5Ohm |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
115mA |
| Fall Time (Typ) |
5.6 ns |
| Continuous Drain Current (ID) |
500mA |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330mW |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Rise Time |
3ns |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Nominal Vgs |
2.5 V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated 2N7002W-7-F
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
| Number of Pins |
3 |
| Weight |
6.010099mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Factory Lead Time |
20 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
7.5Ohm |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
115mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Pbfree Code |
yes |
| Number of Channels |
1 |
| Turn-Off Delay Time |
11 ns |
| Continuous Drain Current (ID) |
115mA |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200mW |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5 Ω @ 50mA, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
115mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) |
5V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation-Max |
200mW Ta |
| Element Configuration |
Single |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
70V |
| Dual Supply Voltage |
60V |
| Nominal Vgs |
2 V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
1mm |
| Length |
2.2mm |
| Width |
1.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |