Showing 1093–1104 of 15245 results
Diodes Incorporated ZVN4206AV
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
12 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Packaging |
Bulk |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
60V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±20V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Rise Time |
12ns |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
600mA |
| Current Rating |
600mA |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.6A |
| Drain to Source Breakdown Voltage |
60V |
| Feedback Cap-Max (Crss) |
20 pF |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4206AVSTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Current - Continuous Drain (Id) @ 25℃ |
600mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
700mW Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
2006 |
| Factory Lead Time |
17 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Diodes Incorporated ZVN4210A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Bulk |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
450mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
20 ns |
| Terminal Form |
WIRE |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1.5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
100V |
| Terminal Position |
BOTTOM |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Rise Time |
8ns |
| Current Rating |
450mA |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.5 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Continuous Drain Current (ID) |
450mA |
| Threshold Voltage |
2.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.45A |
| Drain to Source Breakdown Voltage |
100V |
| Height |
4.95mm |
| Length |
4.95mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4306ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Reach Compliance Code |
unknown |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
850mW Ta |
| Turn Off Delay Time |
30 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
60V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rds On (Max) @ Id, Vgs |
330m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
850mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Current Rating |
1.1A |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
1.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.45Ohm |
| Drain to Source Breakdown Voltage |
60V |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4306AV
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
850mW Ta |
| Terminal Form |
WIRE |
| Factory Lead Time |
17 Weeks |
| Packaging |
Bulk |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
BOTTOM |
| Turn Off Delay Time |
30 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Pin Count |
3 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.13W |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
330m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Current Rating |
1.1A |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
1.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4306AVSTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Supplier Device Package |
E-Line (TO-92 compatible) |
| Weight |
453.59237mg |
| Current - Continuous Drain (Id) @ 25℃ |
1.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Power Dissipation (Max) |
850mW Ta |
| Current Rating |
1.1A |
| Mount |
Through Hole |
| Packaging |
Tape & Box (TB) |
| Published |
2012 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
60V |
| Turn Off Delay Time |
30 ns |
| Number of Channels |
1 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
330mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Drain to Source Voltage (Vdss) |
60V |
| Element Configuration |
Single |
| Power Dissipation |
850mW |
| Continuous Drain Current (ID) |
1.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Input Capacitance |
350pF |
| Drain to Source Resistance |
450mOhm |
| Rds On Max |
330 mΩ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4310ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
900mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
850mW Ta |
| Turn Off Delay Time |
30 ns |
| Reach Compliance Code |
unknown |
| Mount |
Through Hole |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
100V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
900mA |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
850mW |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
| Rise Time |
25ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
900mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.9A |
| Drain-source On Resistance-Max |
0.65Ohm |
| Drain to Source Breakdown Voltage |
100V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4424A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
260mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Turn Off Delay Time |
40 ns |
| Packaging |
Bulk |
| Published |
1997 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
5.5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
240V |
| Terminal Form |
WIRE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±40V |
| Fall Time (Typ) |
5 ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750mW |
| Turn On Delay Time |
2.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Rise Time |
5ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Current Rating |
260mA |
| Continuous Drain Current (ID) |
260mA |
| Threshold Voltage |
1.3V |
| Gate to Source Voltage (Vgs) |
40V |
| Drain Current-Max (Abs) (ID) |
0.26A |
| Drain to Source Breakdown Voltage |
240V |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4424ASTOA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Current Rating |
260mA |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
260mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Turn Off Delay Time |
40 ns |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
240V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
unknown |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vgs(th) (Max) @ Id |
1.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750mW |
| Turn On Delay Time |
2.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.5 Ω @ 500mA, 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Rise Time |
5ns |
| Vgs (Max) |
±40V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
260mA |
| Gate to Source Voltage (Vgs) |
40V |
| Drain Current-Max (Abs) (ID) |
0.26A |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
240V |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSIP-W3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4424ZTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
TO-243AA |
| Number of Pins |
4 |
| Supplier Device Package |
SOT-89-3 |
| Weight |
130.492855mg |
| Current - Continuous Drain (Id) @ 25℃ |
300mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1W Ta |
| Element Configuration |
Single |
| Turn Off Delay Time |
40 ns |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
4.3Ohm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
240V |
| Current Rating |
500mA |
| Number of Channels |
1 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate to Source Voltage (Vgs) |
40V |
| Turn On Delay Time |
2.5 ns |
| Rds On (Max) @ Id, Vgs |
5.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Rise Time |
5ns |
| Drain to Source Voltage (Vdss) |
240V |
| Vgs (Max) |
±40V |
| Fall Time (Typ) |
16 ns |
| Continuous Drain Current (ID) |
300mA |
| Drain to Source Breakdown Voltage |
240V |
| Input Capacitance |
200pF |
| Power Dissipation |
1W |
| Drain to Source Resistance |
6Ohm |
| Rds On Max |
5.5 Ω |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
Diodes Incorporated ZVN4525E6TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 |
| Number of Pins |
6 |
| Weight |
14.996898mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.4V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.1W Ta |
| Turn Off Delay Time |
11.4 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
230mA |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Resistance |
8.5Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
250V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Vgs (Max) |
±40V |
| Pin Count |
6 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.1W |
| Turn On Delay Time |
1.25 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
72pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
3.65nC @ 10V |
| Rise Time |
1.7ns |
| Fall Time (Typ) |
1.7 ns |
| Continuous Drain Current (ID) |
230mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Threshold Voltage |
1.4V |
| Gate to Source Voltage (Vgs) |
40V |
| Drain Current-Max (Abs) (ID) |
0.23A |
| Drain to Source Breakdown Voltage |
250V |
| Nominal Vgs |
1.4 V |
| Height |
1.3mm |
| Length |
3.1mm |
| Width |
1.8mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVNL120GTC
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
320mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3V 5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
200V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Current Rating |
320mA |
| Published |
2012 |
| Pin Count |
4 |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Configuration |
SINGLE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 250mA, 5V |
| Vgs(th) (Max) @ Id |
1.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
85pF @ 25V |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
320mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.32A |
| Drain to Source Breakdown Voltage |
200V |
| Pulsed Drain Current-Max (IDM) |
2A |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |