Showing 1105–1116 of 15245 results
Diodes Incorporated ZVP2110ASTOA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
12 ns |
| Reach Compliance Code |
unknown |
| Voltage - Rated DC |
-100V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Published |
2012 |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
-230mA |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
700mW Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
230mA Ta |
| Weight |
453.59237mg |
| Package / Case |
E-Line-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Number of Channels |
1 |
| Rise Time |
15ns |
| RoHS Status |
RoHS Compliant |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
230mA |
| Fall Time (Typ) |
15 ns |
| Vgs (Max) |
±20V |
| Drain to Source Voltage (Vdss) |
100V |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Pin Count |
3 |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Rds On (Max) @ Id, Vgs |
8 Ω @ 375mA, 10V |
| FET Type |
P-Channel |
| Turn On Delay Time |
7 ns |
| Power Dissipation |
700mW |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP2120A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Bulk |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
12 ns |
| Pin Count |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
-200V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Current Rating |
-120mA |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rise Time |
15ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
25 Ω @ 150mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| JESD-30 Code |
O-PBCY-W3 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Feedback Cap-Max (Crss) |
7 pF |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| RoHS Status |
RoHS Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP2120ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Reach Compliance Code |
unknown |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
12 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
-200V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rds On (Max) @ Id, Vgs |
25 Ω @ 150mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Current Rating |
-120mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Rise Time |
15ns |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-200V |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP2120ASTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Current Rating |
-120mA |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
700mW Ta |
| Turn Off Delay Time |
12 ns |
| Packaging |
Tape & Box (TB) |
| Published |
2001 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-200V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Through Hole |
| Factory Lead Time |
10 Weeks |
| Drain to Source Voltage (Vdss) |
200V |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
700mW |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25 Ω @ 150mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
100pF @ 25V |
| Rise Time |
15ns |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Fall Time (Typ) |
15 ns |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-200V |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP3306A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Bulk |
| Mount |
Surface Mount |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
8 ns |
| Voltage Rated |
75V |
| Terminal Form |
WIRE |
| Factory Lead Time |
17 Weeks |
| Published |
2006 |
| Tolerance |
1% |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
470kOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Power Rating |
100mW |
| Voltage - Rated DC |
-60V |
| Terminal Position |
BOTTOM |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Rise Time |
8ns |
| Drain to Source Voltage (Vdss) |
60V |
| Pin Count |
3 |
| Case Code (Metric) |
1608 |
| Case Code (Imperial) |
0603 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
8 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
14 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 18V |
| Current Rating |
-160mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
160mA |
| Threshold Voltage |
-3.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-60V |
| Feedback Cap-Max (Crss) |
8 pF |
| Height |
450μm |
| Length |
1.6mm |
| Width |
800μm |
| Radiation Hardening |
No |
| REACH SVHC |
Yes |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP3310A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Bulk |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
140mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
8 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
20Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-100V |
| Terminal Form |
WIRE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Drain to Source Voltage (Vdss) |
100V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
8 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
20 Ω @ 150mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Rise Time |
8ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Current Rating |
-140mA |
| Continuous Drain Current (ID) |
140mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP3310FTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Voltage |
100V |
| Factory Lead Time |
17 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
20Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-100V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
-75mA |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Part Status |
Active |
| Power Dissipation-Max |
330mW Ta |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
330mW |
| Turn On Delay Time |
8 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
20 Ω @ 150mA, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
75mA Ta |
| Rise Time |
8ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Element Configuration |
Single |
| Current |
75mA |
| Turn-Off Delay Time |
8 ns |
| Continuous Drain Current (ID) |
75mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP3310FTC
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Turn Off Delay Time |
8 ns |
| Reach Compliance Code |
unknown |
| Voltage - Rated DC |
-100V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Published |
2012 |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
-75mA |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation (Max) |
330mW Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Current - Continuous Drain (Id) @ 25℃ |
75mA Ta |
| Weight |
7.994566mg |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Element Configuration |
Single |
| Drain to Source Voltage (Vdss) |
100V |
| RoHS Status |
RoHS Compliant |
| Drain to Source Breakdown Voltage |
-100V |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
75mA |
| Fall Time (Typ) |
8 ns |
| Vgs (Max) |
±20V |
| Rise Time |
8ns |
| Number of Channels |
1 |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Rds On (Max) @ Id, Vgs |
20 Ω @ 150mA, 10V |
| FET Type |
P-Channel |
| Turn On Delay Time |
8 ns |
| Power Dissipation |
330mW |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP4105ASTOB
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Reach Compliance Code |
unknown |
| Package / Case |
E-Line-3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
175mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
18 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Voltage - Rated DC |
-50V |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Rds On (Max) @ Id, Vgs |
10 Ω @ 100mA, 5V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| JESD-30 Code |
R-PSIP-W3 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
10 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Current Rating |
-175mA |
| Input Capacitance (Ciss) (Max) @ Vds |
40pF @ 25V |
| Rise Time |
10ns |
| Drain to Source Voltage (Vdss) |
50V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
175mA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-50V |
| RoHS Status |
RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP4424A
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Turn Off Delay Time |
26 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Packaging |
Bulk |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
9Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-240V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Rise Time |
8ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Qualification Status |
Not Qualified |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750mW |
| Turn On Delay Time |
8 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Drain to Source Voltage (Vdss) |
240V |
| Vgs (Max) |
±40V |
| Current Rating |
-200mA |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
200mA |
| Threshold Voltage |
-1.4V |
| Gate to Source Voltage (Vgs) |
40V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Drain to Source Breakdown Voltage |
-240V |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZVP4424ASTZ
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Box (TB) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3 |
| Number of Pins |
3 |
| Weight |
453.59237mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
200mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
3.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
750mW Ta |
| Turn Off Delay Time |
26 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
9Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-240V |
| Terminal Form |
WIRE |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Rise Time |
8ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
750mW |
| Turn On Delay Time |
8 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id |
2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
200pF @ 25V |
| Drain to Source Voltage (Vdss) |
240V |
| Vgs (Max) |
±40V |
| Current Rating |
-200mA |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
200mA |
| Gate to Source Voltage (Vgs) |
40V |
| Drain Current-Max (Abs) (ID) |
0.2A |
| Height |
4.01mm |
| Length |
4.77mm |
| Width |
2.41mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXM61N02FTC
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.7V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Turn Off Delay Time |
7.8 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
20V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
3.4nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
806mW |
| Turn On Delay Time |
2.4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
180m Ω @ 930mA, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 15V |
| Rise Time |
4.2ns |
| Vgs (Max) |
±12V |
| Current Rating |
1.7A |
| Fall Time (Typ) |
4.2 ns |
| Continuous Drain Current (ID) |
1.7A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
20V |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
3 |
| Lead Free |
Lead Free |