Showing 1141–1152 of 15245 results
Diodes Incorporated ZXMN3B01FTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
625mW Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
150mOhm |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
8 ns |
| Current Rating |
2A |
| Rise Time |
3.98ns |
| Vgs (Max) |
±12V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
625mW |
| Turn On Delay Time |
2.69 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
150m Ω @ 1.7A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
258pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
2.93nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Fall Time (Typ) |
3.98 ns |
| Continuous Drain Current (ID) |
2A |
| Threshold Voltage |
700mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain to Source Breakdown Voltage |
30V |
| Nominal Vgs |
700 mV |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN3B04N8TA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
73.992255mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
40 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
25mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
7.6A |
| Rise Time |
11.5ns |
| Vgs (Max) |
±12V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3W |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 7.2A, 4.5V |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2480pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
23.1nC @ 4.5V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
8 |
| Fall Time (Typ) |
16.6 ns |
| Continuous Drain Current (ID) |
8.9A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain Current-Max (Abs) (ID) |
7.2A |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
45A |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN3B04N8TC
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
73.992255mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.2A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 4.5V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
40 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
700mV @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
25m Ω @ 7.2A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
2480pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
23.1nC @ 4.5V |
| Current Rating |
7.6A |
| Rise Time |
11.5ns |
| Vgs (Max) |
±12V |
| Fall Time (Typ) |
16.6 ns |
| Continuous Drain Current (ID) |
7.2A |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.025Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
45A |
| RoHS Status |
RoHS Compliant |
| Pin Count |
8 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN3F30FHTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
950mW Ta |
| Turn Off Delay Time |
17 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
47mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Rise Time |
2.6ns |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.4W |
| Turn On Delay Time |
1.6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
47m Ω @ 3.2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
318pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
7.7nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.6 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Continuous Drain Current (ID) |
4.6A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN4A06GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
28.61 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
75mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
40V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
6.7A |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Fall Time (Typ) |
7.35 ns |
| Continuous Drain Current (ID) |
7A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
2.55 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
770pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
18.2nC @ 10V |
| Rise Time |
4.45ns |
| Vgs (Max) |
±20V |
| Number of Channels |
1 |
| Pin Count |
4 |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
22A |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.8mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN6A09GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
25.3 ns |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
40mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
6.8A |
| Gate Charge (Qg) (Max) @ Vgs |
24.2nC @ 5V |
| Rise Time |
5ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 8.2A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1407pF @ 40V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
6.9A |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN6A11GTC
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2012 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
8.2 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
LOW THRESHOLD |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
2.7A |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
1.95 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
5.7nC @ 10V |
| Rise Time |
3.5ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
3.1A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
3.8A |
| Drain to Source Breakdown Voltage |
60V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN6A11ZTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Current Rating |
2.8A |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-243AA |
| Number of Pins |
3 |
| Weight |
130.492855mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.5W Ta |
| Turn Off Delay Time |
8.2 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
120mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Rise Time |
3.5ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.6W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
1.95 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
120m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
5.7nC @ 10V |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
3.6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
2.4A |
| Drain to Source Breakdown Voltage |
60V |
| Height |
1.6mm |
| Length |
4.6mm |
| Width |
2.6mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Number of Channels |
1 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN6A25G
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Terminal Form |
GULL WING |
| Package / Case |
TO-261-4, TO-261AA |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 3.6A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PDSO-G4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Current Rating |
6.7A |
| Peak Reflow Temperature (Cel) |
260 |
| Input Capacitance (Ciss) (Max) @ Vds |
1063pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
20.4nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4.8A |
| Drain-source On Resistance-Max |
0.05Ohm |
| Pulsed Drain Current-Max (IDM) |
28.5A |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMN7A11GTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Published |
2006 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta |
| Turn Off Delay Time |
11.5 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
130mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOW THRESHOLD; FAST SWITCHING |
| Voltage - Rated DC |
70V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
3.8A |
| Input Capacitance (Ciss) (Max) @ Vds |
298pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs |
7.4nC @ 10V |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
3.9W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
1.9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
130m Ω @ 4.4A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Rise Time |
2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.8 ns |
| Continuous Drain Current (ID) |
3.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
70V |
| Height |
1.65mm |
| Length |
6.7mm |
| Width |
3.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMP10A13FTA
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
ZXMP10A13FTA |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Number of Channels |
1 |
| Factory Lead Time |
17 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
1Ohm |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
-100V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-500mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Number of Elements |
1 |
| Part Status |
Active |
| Power Dissipation-Max |
625mW Ta |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.3 ns |
| Power Dissipation |
625mW |
| Turn On Delay Time |
1.6 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1 Ω @ 600mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
141pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C |
600mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 10V |
| Rise Time |
2.1ns |
| Drain to Source Voltage (Vdss) |
100V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Turn-Off Delay Time |
5.9 ns |
| Continuous Drain Current (ID) |
-700mA |
| Threshold Voltage |
-4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
0.7A |
| Drain to Source Breakdown Voltage |
-100V |
| Height |
1.02mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Diodes Incorporated ZXMP10A16KTC
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
TO252 (DPAK) |
| Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.15W Ta |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
17 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Resistance |
235mOhm |
| Additional Feature |
FAST SWITCHING, LOW THRESHOLD |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
20 ns |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Rise Time |
5.2ns |
| Drain to Source Voltage (Vdss) |
100V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
4.24W |
| Turn On Delay Time |
4.3 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
235m Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
717pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
16.5nC @ 10V |
| Pin Count |
4 |
| JESD-30 Code |
R-PDSO-G4 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12.1 ns |
| Continuous Drain Current (ID) |
4.6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-100V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
2.52mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |