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A Field-Effect Transistor (FET) is a pivotal class of transistor that operates by leveraging an electric field to regulate the flow of electrical current. Comprising three terminals – the source, the drain, and the gate – the FET allows current to flow from the source to the drain, with the gate’s voltage controlling this current. FETs are foundational components in a variety of electronic devices due to their ability to control current flow effectively.
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), a specific type of FET, distinguishes itself through its unique gate structure. The gate in a MOSFET is insulated from the rest of the device by a thin layer of metal oxide, resulting in a high input impedance. This means that a MOSFET draws almost no input current, making it incredibly efficient. This high input impedance and low power consumption make MOSFETs the preferred choice for many digital and analog circuits. When we talk about “Single FETs” or “Single MOSFETs”, we refer to electronic circuits or devices that utilize just one FET or MOSFET, which can serve as a switch, an amplifier, or a voltage-controlled resistor, depending on the design.
Advanced BLV33
In stock
| Manufacturer |
Advanced Semiconductor, Inc. |
|---|---|
| Maximum Operating Temperature |
+ 200 C |
| Package / Case |
DO-203AB, DO-5, Stud |
| Surface Mount |
NO |
| Supplier Device Package |
DO-5 |
| Number of Terminals |
4 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Brand |
Advanced Semiconductor, Inc. |
| Collector- Emitter Voltage VCEO Max |
33 V |
| DC Collector/Base Gain hfe Min |
15 |
| Emitter- Base Voltage VEBO |
4 V |
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC |
| Manufacturer Part Number |
BLV33 |
| Transistor Polarity |
NPN |
| Mounting Type |
Stud Mount |
| Mfr |
Microchip Technology |
| Minimum Operating Temperature |
– 65 C |
| Operating Temperature-Max |
200 °C |
| Package |
Bulk |
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED |
| Package Description |
POST/STUD MOUNT, O-CRPM-F4 |
| Package Shape |
ROUND |
| Package Style |
POST/STUD MOUNT |
| Part Life Cycle Code |
Active |
| Pd - Power Dissipation |
132 W |
| Product Status |
Active |
| Risk Rank |
5.09 |
| Maximum DC Collector Current |
20 A |
| Transition Frequency-Nom (fT) |
750 MHz |
| Transistor Application |
AMPLIFIER |
| Voltage - DC Reverse (Vr) (Max) |
100 V |
| Type |
RF Bipolar Power |
| Subcategory |
Transistors |
| Technology |
Standard |
| Terminal Position |
RADIAL |
| Terminal Form |
FLAT |
| Reach Compliance Code |
unknown |
| JESD-30 Code |
O-CRPM-F4 |
| Qualification Status |
Not Qualified |
| Operating Frequency |
224 MHz |
| Configuration |
Single |
| Voltage - Forward (Vf) (Max) @ If |
975 mV @ 70 A |
| Operating Temperature - Junction |
175°C (Max) |
| Packaging |
Tray |
| ECCN Code |
EAR99 |
| Current - Average Rectified (Io) |
70A |
| Polarity/Channel Type |
NPN |
| Product Type |
RF Bipolar Transistors |
| Transistor Type |
Bipolar Power |
| Capacitance @ Vr, F |
300pF @ 10V, 1MHz |
| Power Dissipation-Max (Abs) |
132 W |
| Collector Current-Max (IC) |
12.5 A |
| DC Current Gain-Min (hFE) |
15 |
| Continuous Collector Current |
12.5 A |
| Collector-Emitter Voltage-Max |
33 V |
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND |
| Reverse Recovery Time (trr) |
50 ns |
| Product Category |
RF Bipolar Transistors |
Advanced BLX98
In stock
| Manufacturer |
Advanced Semiconductor, Inc. |
|---|---|
| Mfr |
ITT Cannon, LLC |
| Contact Shape |
Circular |
| Shell Material |
Aluminum Alloy |
| Insert Material |
Polychloroprene |
| Mounting Style |
Through Hole |
| Base Product Number |
KPSE |
| Brand |
Advanced Semiconductor, Inc. |
| Collector- Emitter Voltage VCEO Max |
40 V |
| Connector Type |
Plug Housing |
| Mounting Type |
Free Hanging (In-Line) |
| Package |
Bulk |
| Pd - Power Dissipation |
5.3 W |
| Product Status |
Active |
| Transistor Polarity |
NPN |
| Operating Temperature |
-55°C ~ 125°C |
| Packaging |
Tray |
| Series |
KPSE |
| Emitter- Base Voltage VEBO |
4 V |
| Type |
For Female Sockets |
| Shell Size - Insert |
14-12 |
| Operating Frequency |
40 MHz to 860 MHz |
| Subcategory |
Transistors |
| Contact Type |
Crimp |
| Technology |
Si |
| Orientation |
N (Normal) |
| Shielding |
Shielded |
| Ingress Protection |
Environment Resistant |
| Shell Finish |
Chromate over Cadmium |
| Number of Positions |
12 |
| Fastening Type |
Bayonet Lock |
| Housing Color |
Olive Drab |
| Configuration |
Single |
| Note |
Contacts Not Included |
| Contact Size |
16 (4), 20 (8) |
| Product Type |
RF Bipolar Transistors |
| Transistor Type |
Bipolar Power |
| Continuous Collector Current |
2 A |
| Product Category |
RF Bipolar Transistors |
Alpha & Omega Semiconductor Inc. AO3160
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Published |
2011 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
40mA Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.39W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
500 Ω @ 16mA, 10V |
| Vgs(th) (Max) @ Id |
3.2V @ 8μA |
| Input Capacitance (Ciss) (Max) @ Vds |
15pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40mA |
| RoHS Status |
ROHS3 Compliant |
Alpha & Omega Semiconductor Inc. AO3400A
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Pin Count |
3 |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
1.4W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
25 ns |
| Published |
2011 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs (Max) |
±12V |
| Continuous Drain Current (ID) |
5.7A |
| Power Dissipation |
1.4W |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
26.5m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
630pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
7nC @ 4.5V |
| Number of Channels |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Threshold Voltage |
650mV |
| Gate to Source Voltage (Vgs) |
12V |
| Drain-source On Resistance-Max |
0.0265Ohm |
| Drain to Source Breakdown Voltage |
30V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.25mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Alpha & Omega Semiconductor Inc. AO3401
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
2.5V 10V |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Power Dissipation (Max) |
1.4W Ta |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id |
1.3V @ 250μA |
| JESD-30 Code |
R-PDSO-G3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
645pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±12V |
| Drain Current-Max (Abs) (ID) |
4A |
| Drain-source On Resistance-Max |
0.05Ohm |
| DS Breakdown Voltage-Min |
30V |
| RoHS Status |
ROHS3 Compliant |
Alpha & Omega Semiconductor Inc. AO3404
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
1.4W Ta |
| Published |
2005 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
310pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
6.3nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
31m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| JESD-30 Code |
R-PDSO-G3 |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain-source On Resistance-Max |
0.031Ohm |
| DS Breakdown Voltage-Min |
30V |
| Feedback Cap-Max (Crss) |
50 pF |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Alpha & Omega Semiconductor Inc. AO3404A
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
5.8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.4W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
28m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
820pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
5.8A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Alpha & Omega Semiconductor Inc. AO3406
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Power Dissipation (Max) |
1.4W Ta |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.6A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Input Capacitance (Ciss) (Max) @ Vds |
210pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
5nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.4W |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 3.6A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Terminal Form |
GULL WING |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
3.6A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.065Ohm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
Alpha & Omega Semiconductor Inc. AO3407
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Published |
2003 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
4.1A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
1.4W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
52m Ω @ 4.1A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
520pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Alpha & Omega Semiconductor Inc. AO3407A
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Terminal Position |
DUAL |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
1.4W Ta |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
1.4W |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
48m Ω @ 4.3A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
830pF @ 15V |
| Pin Count |
3 |
| Terminal Form |
GULL WING |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.048Ohm |
| Feedback Cap-Max (Crss) |
90 pF |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Alpha & Omega Semiconductor Inc. AO3413L
In stock
| Manufacturer |
Alpha & Omega Semiconductor Inc. |
|---|---|
| Part Status |
Obsolete |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Current - Continuous Drain (Id) @ 25℃ |
3A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V 4.5V |
| Power Dissipation (Max) |
1.4W Ta |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| FET Type |
P-Channel |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Rds On (Max) @ Id, Vgs |
97m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
540pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
6.1nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
| Vgs (Max) |
±8V |
| RoHS Status |
Non-RoHS Compliant |
Q1: What is a FET?
A1: A Field-Effect Transistor (FET) is a type of transistor that uses an electric field to control the flow of current. It has three terminals: the source, the drain, and the gate. The current flows from the source to the drain, and the voltage applied at the gate controls this current.
Q2: What is a MOSFET?
A2: A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a specific type of FET. In a MOSFET, the gate is insulated from the rest of the device by a thin layer of metal oxide. This allows the MOSFET to have very high input impedance, which means it draws almost no input current.
Q3: What are the advantages of MOSFETs?
A3: MOSFETs are widely used in digital and analog circuits because of their high input impedance and low power consumption. This makes them ideal for use in devices where energy efficiency is important.
Q4: What does "Single FET" or "Single MOSFET" mean?
A4: "Single FET" or "Single MOSFET" refers to circuits or devices that use just one FET or MOSFET. Depending on the specific design of the circuit, a single FET could be used as a switch, an amplifier, or a voltage-controlled resistor.
Q5: Where are FETs and MOSFETs used?
A5: FETs and MOSFETs are fundamental building blocks in modern electronics. They are used in computers, mobile phones, and many other devices. Their ability to control current flow makes them essential in a wide variety of applications.