Showing 1189–1200 of 7598 results
Infineon Technologies BSZ028N04LSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 63W Tc |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2300pF @ 20V |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
S-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.8m Ω @ 20A, 10V |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Rise Time |
4ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain Current-Max (Abs) (ID) |
21A |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
100 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ031NE2LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.1W Ta 30W Tc |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1230pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs |
18.3nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.1m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±16V |
| Continuous Drain Current (ID) |
40A |
| Max Dual Supply Voltage |
25V |
| Drain Current-Max (Abs) (ID) |
19A |
| Drain-source On Resistance-Max |
0.0039Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-PDSO-N3 |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ033NE2LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
18A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.1W Ta 30W Tc |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1230pF @ 12V |
| JESD-30 Code |
S-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
18.3nC @ 10V |
| Vgs (Max) |
±16V |
| Continuous Drain Current (ID) |
40A |
| Max Dual Supply Voltage |
25V |
| Drain-source On Resistance-Max |
0.0041Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
20 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ040N04LSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
2.1W Ta 69W Tc |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Supplier Device Package |
PG-TSDSON-8 |
| Current - Continuous Drain (Id) @ 25℃ |
18A Ta 40A Tc |
| Min Operating Temperature |
-55°C |
| Factory Lead Time |
18 Weeks |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1998 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation |
69W |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5.4 ns |
| Rds On (Max) @ Id, Vgs |
4mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 36μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Rise Time |
4.8ns |
| Drain to Source Voltage (Vdss) |
40V |
| Turn On Delay Time |
8.5 ns |
| FET Type |
N-Channel |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Input Capacitance |
5.1nF |
| Drain to Source Resistance |
3.3mOhm |
| Rds On Max |
4 mΩ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ040N06LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
18 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Part Status |
Active |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
60V |
| Polarity/Channel Type |
N-CHANNEL |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
8.5 ns |
| Transistor Application |
SWITCHING |
| JESD-30 Code |
S-PDSO-N3 |
| Number of Elements |
1 |
| Turn-Off Delay Time |
25.6 ns |
| Continuous Drain Current (ID) |
17A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) |
150°C |
| Drain to Source Resistance |
3.3mOhm |
| Height |
1.1mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ042N06NSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Number of Elements |
1 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Reach Compliance Code |
not_compliant |
| Pin Count |
8 |
| JESD-30 Code |
S-PDSO-N3 |
| Contact Plating |
Tin |
| Factory Lead Time |
18 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
| Rise Time |
7ns |
| Power Dissipation |
2.5W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.8V @ 36μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C |
17A Ta 40A Tc |
| Power Dissipation-Max |
2.1W Ta 69W Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0042Ohm |
| Feedback Cap-Max (Crss) |
44 pF |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ0500NSIATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.1W Ta 69W Tc |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
3400pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Max Dual Supply Voltage |
30V |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.0019Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
90 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-PDSO-N3 |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ0501NSIATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.1W Ta 50W Tc |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Max Dual Supply Voltage |
30V |
| Drain Current-Max (Abs) (ID) |
25A |
| Drain-source On Resistance-Max |
0.0025Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
40 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-PDSO-N3 |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ0502NSIATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation (Max) |
2.1W Ta 43W Tc |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| Max Dual Supply Voltage |
30V |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.0033Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| Avalanche Energy Rating (Eas) |
30 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-PDSO-N3 |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ058N03LSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Number of Elements |
1 |
| Part Status |
Active |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Power Dissipation-Max |
2.1W Ta 45W Tc |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.8m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
15A Ta 40A Tc |
| Rise Time |
3.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3.2 ns |
| Turn-Off Delay Time |
19 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Drain Current-Max (Abs) (ID) |
40A |
| Avalanche Energy Rating (Eas) |
55 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ058N03MSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
14A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 45W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
10 Weeks |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 15V |
| JESD-30 Code |
R-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Rise Time |
3.8ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Drain Current-Max (Abs) (ID) |
40A |
| Drain-source On Resistance-Max |
0.0064Ohm |
| Avalanche Energy Rating (Eas) |
55 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ060NE2LSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 26W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
11 ns |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Contact Plating |
Tin |
| Factory Lead Time |
18 Weeks |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 12V |
| JESD-30 Code |
S-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
2.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
9.1nC @ 10V |
| Rise Time |
2.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
1.8 ns |
| Continuous Drain Current (ID) |
12A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
25V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
8 |
| Lead Free |
Contains Lead |