Showing 1201–1212 of 7598 results
Infineon Technologies BSZ065N06LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Turn Off Delay Time |
14 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Reach Compliance Code |
not_compliant |
| Number of Channels |
1 |
| Power Dissipation |
2.1W |
| Turn On Delay Time |
5 ns |
| Drain to Source Voltage (Vdss) |
60V |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Max Junction Temperature (Tj) |
150°C |
| Drain to Source Resistance |
5.4mOhm |
| Height |
1.1mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ067N06LS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Series |
OptiMOS™ |
| Pin Count |
8 |
| Vgs(th) (Max) @ Id |
2.2V @ 35μA |
| Halogen Free |
Halogen Free |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
2.1W Ta 69W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6.7m Ω @ 20A, 10V |
| JESD-30 Code |
S-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Input Capacitance (Ciss) (Max) @ Vds |
5100pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C |
14A Ta 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
67nC @ 10V |
| Rise Time |
26ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
14A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ075N08NS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| Power Dissipation-Max |
69W Tc |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
S-PDSO-N3 |
| Number of Elements |
1 |
| Pbfree Code |
yes |
| Element Configuration |
Single |
| Gate Charge (Qg) (Max) @ Vgs |
29.5nC @ 10V |
| Rise Time |
4ns |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 36μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2080pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C |
40A Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
69W |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4 ns |
| Turn-Off Delay Time |
19 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Drain-source On Resistance-Max |
0.0075Ohm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ076N06NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2009 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
20A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 69W Tc |
| Turn Off Delay Time |
20 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
4V @ 35μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
S-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.6m Ω @ 20A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Input Capacitance (Ciss) (Max) @ Vds |
4000pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
50nC @ 10V |
| Rise Time |
40ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
20A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0076Ohm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ0901NSIATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 69W Tc |
| Terminal Form |
NO LEAD |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Turn Off Delay Time |
27 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Pin Count |
8 |
| JESD-30 Code |
R-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
2.1m Ω @ 20A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
7.2ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
4.6 ns |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| FET Feature |
Schottky Diode (Body) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ0902NSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Current - Continuous Drain (Id) @ 25℃ |
19A Ta 40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 48W Tc |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
21 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Reach Compliance Code |
not_compliant |
| Power Dissipation |
2.1W |
| Turn On Delay Time |
4.2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 15V |
| Rise Time |
5.2ns |
| Vgs (Max) |
±20V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Fall Time (Typ) |
3.6 ns |
| Continuous Drain Current (ID) |
19A |
| Threshold Voltage |
2V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ0909NSATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta 36A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 25W Tc |
| Turn Off Delay Time |
16 ns |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
18 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Rise Time |
2.2ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1310pF @ 15V |
| JESD-30 Code |
S-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Drain to Source Voltage (Vdss) |
34V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2 ns |
| Continuous Drain Current (ID) |
36A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
30V |
| Drain-source On Resistance-Max |
0.012Ohm |
| Pulsed Drain Current-Max (IDM) |
144A |
| DS Breakdown Voltage-Min |
34V |
| Avalanche Energy Rating (Eas) |
9 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ096N10LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature (Min.) |
-55°C |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
DUAL |
| Transistor Application |
SWITCHING |
| Polarity/Channel Type |
N-CHANNEL |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
S-PDSO-N3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain Current-Max (Abs) (ID) |
11A |
| Drain-source On Resistance-Max |
0.0096Ohm |
| Pulsed Drain Current-Max (IDM) |
160A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
82 mJ |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ12DN20NS3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Turn Off Delay Time |
10 ns |
| Reach Compliance Code |
not_compliant |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
680pF @ 100V |
| JESD-30 Code |
S-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
125m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 25μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Gate Charge (Qg) (Max) @ Vgs |
8.7nC @ 10V |
| Rise Time |
4ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
11.3A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
200V |
| Drain-source On Resistance-Max |
0.125Ohm |
| Pulsed Drain Current-Max (IDM) |
45A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies BSZ130N03MSGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta 35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 25W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
DUAL |
| Factory Lead Time |
18 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
NO LEAD |
| Rds On (Max) @ Id, Vgs |
11.5m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| JESD-30 Code |
S-PDSO-N5 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain-source On Resistance-Max |
0.015Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
30V |
| Avalanche Energy Rating (Eas) |
9 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ146N10LS5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies BSZ180P03NS3EGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Ta 39.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2.1W Ta 40W Tc |
| Turn Off Delay Time |
20 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Additional Feature |
ESD PROTECTED |
| Terminal Position |
DUAL |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Contact Plating |
Tin |
| Factory Lead Time |
18 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2220pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
40W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.1V @ 48μA |
| Halogen Free |
Halogen Free |
| Pin Count |
8 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
11ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±25V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
39.5A |
| Threshold Voltage |
-2.5V |
| Gate to Source Voltage (Vgs) |
25V |
| Max Dual Supply Voltage |
-30V |
| Drain Current-Max (Abs) (ID) |
9A |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
S-PDSO-F5 |
| Lead Free |
Contains Lead |