Showing 1225–1236 of 7598 results
Infineon Technologies IGLD60R070D1AUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
8-LDFN Exposed Pad |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Power Dissipation (Max) |
114W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolGaN™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
1.6V @ 2.6mA |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 400V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
-10V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPA030N10N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
79A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
41W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
112 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
3.5V @ 270μA |
| Halogen Free |
Halogen Free |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
41W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
42 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 79A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
14800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
206nC @ 10V |
| Rise Time |
38ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
37 ns |
| Continuous Drain Current (ID) |
79A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPA040N06NXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
69A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
36W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
13 Weeks |
| Packaging |
Tube |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
33 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Rise Time |
16ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4m Ω @ 69A, 10V |
| Vgs(th) (Max) @ Id |
3.3V @ 50μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3375pF @ 30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
69A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.004Ohm |
| Pulsed Drain Current-Max (IDM) |
276A |
| Avalanche Energy Rating (Eas) |
77 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPA060N06NXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
33W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
20 ns |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
6m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id |
3.3V @ 36μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 30V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
45A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.006Ohm |
| Pulsed Drain Current-Max (IDM) |
180A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Infineon Technologies IPA180N10N3GXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
28A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Turn Off Delay Time |
18 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 50V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
30W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 28A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 35μA |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
28A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Avalanche Energy Rating (Eas) |
59 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPA50R199CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
139W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Qualification Status |
Not Qualified |
| Mounting Type |
Through Hole |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Published |
2008 |
| Element Configuration |
Single |
| Fall Time (Typ) |
10 ns |
| Continuous Drain Current (ID) |
17A |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
199m Ω @ 9.9A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 660μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Rise Time |
14ns |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
139W |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.199Ohm |
| Drain to Source Breakdown Voltage |
500V |
| Pulsed Drain Current-Max (IDM) |
40A |
| Dual Supply Voltage |
550V |
| Nominal Vgs |
3 V |
| Height |
16.15mm |
| Length |
10.65mm |
| Width |
4.85mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPA50R299CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Turn Off Delay Time |
80 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
3 |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
14ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
104W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
299m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 440μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 100V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
12A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain-source On Resistance-Max |
0.299Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| Avalanche Energy Rating (Eas) |
289 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPA50R350CPXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
10A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
32W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1020pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
350m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 370μA |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain Current-Max (Abs) (ID) |
10A |
| Drain-source On Resistance-Max |
0.35Ohm |
| Pulsed Drain Current-Max (IDM) |
22A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
246 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPA50R380CEXKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
6.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
29.2W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ CE |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
56 ns |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
584pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
24.8nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
380m Ω @ 3.2A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 260μA |
| Halogen Free |
Halogen Free |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
9ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
6.3A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Avalanche Energy Rating (Eas) |
210 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPA50R650CEXKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
4.6A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
27.2W Tc |
| Turn Off Delay Time |
27 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ CE |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mount |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Rise Time |
5ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
6 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
650m Ω @ 1.8A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 150μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
342pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
13 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Continuous Drain Current (ID) |
4.6A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain Current-Max (Abs) (ID) |
6.1A |
| Drain-source On Resistance-Max |
0.65Ohm |
| Pulsed Drain Current-Max (IDM) |
19A |
| Avalanche Energy Rating (Eas) |
102 mJ |
| RoHS Status |
RoHS Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
Infineon Technologies IPA50R800CE
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
26.4W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
6 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-40°C~150°C TJ |
| Reach Compliance Code |
compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
12.4nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 1.5A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 130μA |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Drain to Source Voltage (Vdss) |
500V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.8Ohm |
| Pulsed Drain Current-Max (IDM) |
15.5A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
83 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPA50R950CEXKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
3.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
25.7W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ CE |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
25 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
| Rise Time |
4.9ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
7 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
950m Ω @ 1.2A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 100μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
231pF @ 100V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19.5 ns |
| Continuous Drain Current (ID) |
3.7A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
30V |
| Max Dual Supply Voltage |
500V |
| Drain-source On Resistance-Max |
0.95Ohm |
| Pulsed Drain Current-Max (IDM) |
12.8A |
| Avalanche Energy Rating (Eas) |
68 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |