Showing 1249–1260 of 7598 results
Infineon Technologies IPA60R750E6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
5.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
27W Tc |
| Turn Off Delay Time |
50 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
373pF @ 100V |
| Qualification Status |
Not Qualified |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
27W |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
750m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 170μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
17.2nC @ 10V |
| Rise Time |
7ns |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
5.7A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.75Ohm |
| Avalanche Energy Rating (Eas) |
72 mJ |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Lead Free |
Infineon Technologies IPA65R065C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
34W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
72 ns |
| Published |
2005 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
65m Ω @ 17.1A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 850μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3020pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
64nC @ 10V |
| Rise Time |
14ns |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
15A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain Current-Max (Abs) (ID) |
19A |
| Drain-source On Resistance-Max |
0.065Ohm |
| Pulsed Drain Current-Max (IDM) |
145A |
| Avalanche Energy Rating (Eas) |
171 mJ |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
ISOLATED |
| Lead Free |
Lead Free |
Infineon Technologies IPA65R190C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Turn Off Delay Time |
54 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
9 ns |
| Case Connection |
ISOLATED |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 290μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
8A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain-source On Resistance-Max |
0.19Ohm |
| Pulsed Drain Current-Max (IDM) |
49A |
| Avalanche Energy Rating (Eas) |
57 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPA65R225C7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
29W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
48 ns |
| Published |
2008 |
| Series |
CoolMOS™ C7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
10 ns |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
225m Ω @ 4.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 240μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
996pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
6ns |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
7A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Drain Current-Max (Abs) (ID) |
7A |
| Drain-source On Resistance-Max |
0.225Ohm |
| Pulsed Drain Current-Max (IDM) |
41A |
| Avalanche Energy Rating (Eas) |
48 mJ |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
ISOLATED |
| Lead Free |
Lead Free |
Infineon Technologies IPA65R600C6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
28W Tc |
| Packaging |
Tube |
| Published |
2008 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Through Hole |
| Factory Lead Time |
12 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 210μA |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.1A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
142 mJ |
| Pin Count |
3 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPA70R600P7SXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
8.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
25W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 1.8A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
364pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±16V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPA80R1K4P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
24W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.4 Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 700μA |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 10V |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
4A |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPA80R280P7XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
30W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Published |
2013 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 7.2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 360μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
800V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
45A |
| DS Breakdown Voltage-Min |
800V |
| Avalanche Energy Rating (Eas) |
43 mJ |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPA80R650CEXKSA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8A Ta |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
33W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-40°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
650m Ω @ 5.1A, 10V |
| Vgs(th) (Max) @ Id |
3.9V @ 470μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 100V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Continuous Drain Current (ID) |
8A |
| JEDEC-95 Code |
TO-220AB |
| Max Dual Supply Voltage |
800V |
| Drain Current-Max (Abs) (ID) |
8A |
| Drain-source On Resistance-Max |
0.65Ohm |
| Pulsed Drain Current-Max (IDM) |
24A |
| Avalanche Energy Rating (Eas) |
340 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPAN60R800CEXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Current - Continuous Drain (Id) @ 25℃ |
8.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
27W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Factory Lead Time |
18 Weeks |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 170μA |
| Input Capacitance (Ciss) (Max) @ Vds |
373pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
17.2nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
8.4A |
| FET Feature |
Super Junction |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPAN70R600P7SXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
8.5A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation (Max) |
24.9W Tc |
| Published |
2014 |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
364pF @ 400V |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
ISOLATED |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 1.8A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Gate Charge (Qg) (Max) @ Vgs |
10.5nC @ 10V |
| Drain to Source Voltage (Vdss) |
700V |
| Vgs (Max) |
±16V |
| JEDEC-95 Code |
TO-220AB |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
20.5A |
| DS Breakdown Voltage-Min |
700V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPAW60R190CEXKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
26.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
34W Tc |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 9.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 630μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
63nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
26.7A |
| Threshold Voltage |
3V |
| FET Feature |
Super Junction |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |