Showing 1273–1284 of 7598 results
Infineon Technologies IPB032N10N5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
166A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
187W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Vgs(th) (Max) @ Id |
3.8V @ 125μA |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.2m Ω @ 83A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
6970pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
166A |
| Drain-source On Resistance-Max |
0.0032Ohm |
| Pulsed Drain Current-Max (IDM) |
664A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
233 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB037N06N3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
188W Tc |
| Turn Off Delay Time |
40 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
188W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 90A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Input Capacitance (Ciss) (Max) @ Vds |
11000pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
98nC @ 10V |
| Rise Time |
70ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
90A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB038N12N3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Qualification Status |
Not Qualified |
| Part Status |
Active |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Current - Continuous Drain (Id) @ 25°C |
120A Tc |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.8m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 270μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13800pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs |
211nC @ 10V |
| Rise Time |
52ns |
| Number of Elements |
1 |
| Drain to Source Voltage (Vdss) |
120V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
21 ns |
| Turn-Off Delay Time |
70 ns |
| Continuous Drain Current (ID) |
120A |
| Gate to Source Voltage (Vgs) |
20V |
| Pulsed Drain Current-Max (IDM) |
480A |
| Avalanche Energy Rating (Eas) |
900 mJ |
| Power Dissipation-Max |
300W Tc |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB048N15N5LFATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
120A |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
313W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
13 Weeks |
| Published |
2013 |
| Series |
OptiMOS™-5 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs |
84nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4.9V @ 255μA |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
120A |
| Drain-source On Resistance-Max |
0.0048Ohm |
| Pulsed Drain Current-Max (IDM) |
480A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
30 mJ |
| Feedback Cap-Max (Crss) |
23 pF |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB049N08N5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
27 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Published |
2013 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
53nC @ 10V |
| Rise Time |
7ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.9m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
3.8V @ 66μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3770pF @ 40V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Drain-source On Resistance-Max |
0.0049Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
84 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB04N03LAT
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Voltage - Rated DC |
25V |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO263-3-2 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
107W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| FET Type |
N-Channel |
| Current Rating |
80A |
| Rds On (Max) @ Id, Vgs |
3.9mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 60μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3877pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 5V |
| Rise Time |
4.5ns |
| Drain to Source Voltage (Vdss) |
25V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Input Capacitance |
3.877nF |
| Rds On Max |
3.9 mΩ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPB052N04NGATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Peak Reflow Temperature (Cel) |
260 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
4V @ 33μA |
| Pin Count |
4 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
79W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
5.2m Ω @ 70A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3300pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
70A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0052Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
35 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPB065N15N3GE8187ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TO263-7 |
| Current - Continuous Drain (Id) @ 25℃ |
130A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Power Dissipation (Max) |
300W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Mount |
Surface Mount |
| Min Operating Temperature |
-55°C |
| Max Operating Temperature |
175°C |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 270μA |
| Input Capacitance (Ciss) (Max) @ Vds |
7300pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs |
93nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
130A |
| Input Capacitance |
7.3nF |
| Rds On Max |
6.5 mΩ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPB073N15N5ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
114A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
214W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
13 Weeks |
| Published |
2004 |
| Series |
OptiMOS™-5 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4.6V @ 160μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 75V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.3m Ω @ 57A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
114A |
| Drain-source On Resistance-Max |
0.0073Ohm |
| Pulsed Drain Current-Max (IDM) |
456A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
130 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB100N04S2L03ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
77 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
31 Weeks |
| Published |
2006 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
AVALANCHE RATED |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Rise Time |
51ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB100N06S2L05ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2005 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
98 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
10 Weeks |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
24 ns |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5660pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 10V |
| Rise Time |
25ns |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.0056Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| Height |
4.57mm |
| Length |
10.31mm |
| Width |
9.45mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB100N06S3-03
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
100A |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
77 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Published |
2007 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
480nC @ 10V |
| Rise Time |
67ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 230μA |
| Input Capacitance (Ciss) (Max) @ Vds |
21620pF @ 25V |
| Pin Count |
4 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.003Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
2390 mJ |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |