Showing 1297–1308 of 7598 results
Infineon Technologies IPB160N04S2L03ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Reach Compliance Code |
not_compliant |
| Packaging |
Tape & Reel (TR) |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 15V |
| JESD-30 Code |
R-PSSO-G6 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
230nC @ 5V |
| Rise Time |
51ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain to Source Breakdown Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
640A |
| Avalanche Energy Rating (Eas) |
810 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB160N04S3H2ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
160A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
214W Tc |
| Turn Off Delay Time |
46 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2007 |
| Series |
OptiMOS™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
9600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
145nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
214W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.1m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 150μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Rise Time |
16ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
17 ns |
| Continuous Drain Current (ID) |
160A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
640A |
| Avalanche Energy Rating (Eas) |
898 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G6 |
| Lead Free |
Contains Lead |
Infineon Technologies IPB17N25S3100ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO263-3-2 |
| Current - Continuous Drain (Id) @ 25℃ |
17A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
107W Tc |
| Turn Off Delay Time |
7.5 ns |
| Turn On Delay Time |
4.4 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2012 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Power Dissipation |
107W |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
100mOhm @ 17A, 10V |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V |
| Rise Time |
3.7ns |
| Drain to Source Voltage (Vdss) |
250V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
1.2 ns |
| Continuous Drain Current (ID) |
17A |
| Max Dual Supply Voltage |
250V |
| Drain to Source Breakdown Voltage |
250V |
| FET Type |
N-Channel |
| Input Capacitance |
1.133nF |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
85mOhm |
| Rds On Max |
100 mΩ |
| Height |
4.7mm |
| Length |
10mm |
| Width |
9.25mm |
| RoHS Status |
ROHS3 Compliant |
| Vgs(th) (Max) @ Id |
4V @ 54μA |
| Lead Free |
Contains Lead |
Infineon Technologies IPB180N03S4LH0ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Turn Off Delay Time |
60 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
14 Weeks |
| Published |
2009 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
23000pF @ 25V |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.95m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 200μA |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Rise Time |
7ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
180A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
30V |
| Drain-source On Resistance-Max |
0.00095Ohm |
| Avalanche Energy Rating (Eas) |
980 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB180N04S4H0ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
250W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
SINGLE |
| Factory Lead Time |
16 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Vgs(th) (Max) @ Id |
4V @ 180μA |
| Input Capacitance (Ciss) (Max) @ Vds |
17940pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.1m Ω @ 100A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
225nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
180A |
| Drain-source On Resistance-Max |
0.0011Ohm |
| Pulsed Drain Current-Max (IDM) |
720A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
850 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB180N04S4L01ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
188W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
19100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
245nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 140μA |
| Halogen Free |
Halogen Free |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
+20V, -16V |
| Continuous Drain Current (ID) |
180A |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0012Ohm |
| Pulsed Drain Current-Max (IDM) |
720A |
| Avalanche Energy Rating (Eas) |
550 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G6 |
| Lead Free |
Contains Lead |
Infineon Technologies IPB180N08S402ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
7 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
180A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
277W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Turn Off Delay Time |
50 ns |
| Terminal Form |
GULL WING |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
11550pF @ 25V |
| JESD-30 Code |
R-PSSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 220μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
167nC @ 10V |
| Rise Time |
15ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
180A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
80V |
| Drain-source On Resistance-Max |
0.0022Ohm |
| Avalanche Energy Rating (Eas) |
640 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB200N15N3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Factory Lead Time |
13 Weeks |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Rds On (Max) @ Id, Vgs |
20m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1820pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain-source On Resistance-Max |
0.02Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
170 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB230N06L3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
36W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2012 |
| Reach Compliance Code |
unknown |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 11μA |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
36W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs |
10nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.023Ohm |
| DS Breakdown Voltage-Min |
60V |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPB240N03S4LR9ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
240A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
231W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G6 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
0.92m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 180μA |
| Input Capacitance (Ciss) (Max) @ Vds |
20300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
300nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs (Max) |
±16V |
| Continuous Drain Current (ID) |
240A |
| Max Dual Supply Voltage |
30V |
| Drain-source On Resistance-Max |
0.00145Ohm |
| Pulsed Drain Current-Max (IDM) |
960A |
| Avalanche Energy Rating (Eas) |
750 mJ |
| RoHS Status |
ROHS3 Compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Lead Free |
Contains Lead |
Infineon Technologies IPB25N06S3L-22
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Current Rating |
25A |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
50W Tc |
| Turn Off Delay Time |
30 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Published |
2007 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Rise Time |
26ns |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
50W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
21.3m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2260pF @ 25V |
| Pin Count |
4 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
43 ns |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0213Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
100A |
| Avalanche Energy Rating (Eas) |
120 mJ |
| RoHS Status |
RoHS Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Lead Free |
Infineon Technologies IPB35N10S3L26ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
71W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
26.3m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 39μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
35A |
| Drain-source On Resistance-Max |
0.0322Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
175 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |