Showing 1309–1320 of 7598 results
Infineon Technologies IPB45N04S4L08ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
45W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
2340pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.6m Ω @ 45A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 17μA |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Reach Compliance Code |
compliant |
| Vgs (Max) |
+20V, -16V |
| Drain Current-Max (Abs) (ID) |
45A |
| Drain-source On Resistance-Max |
0.0076Ohm |
| Pulsed Drain Current-Max (IDM) |
180A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
55 mJ |
| Reference Standard |
AEC-Q101 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPB45N06S3L-13
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
45A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
65W Tc |
| Turn Off Delay Time |
58 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Published |
2007 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vgs(th) (Max) @ Id |
2.2V @ 30μA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
65W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
13.1m Ω @ 26A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
3600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Current Rating |
45A |
| Rise Time |
46ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
124 ns |
| Continuous Drain Current (ID) |
45A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
95 mJ |
| RoHS Status |
RoHS Compliant |
| Pin Count |
4 |
| Lead Free |
Lead Free |
Infineon Technologies IPB50N12S3L15ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Terminal Position |
SINGLE |
| Terminal Finish |
Tin (Sn) |
| ECCN Code |
EAR99 |
| Number of Terminations |
2 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Terminal Form |
GULL WING |
| Pbfree Code |
yes |
| Published |
2016 |
| Packaging |
Tape & Reel (TR) |
| Operating Temperature (Min.) |
-55°C |
| Number of Elements |
1 |
| Transistor Element Material |
SILICON |
| Surface Mount |
YES |
| Factory Lead Time |
14 Weeks |
| Reach Compliance Code |
not_compliant |
| JEDEC-95 Code |
TO-263AB |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Avalanche Energy Rating (Eas) |
330 mJ |
| DS Breakdown Voltage-Min |
120V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Drain-source On Resistance-Max |
0.0206Ohm |
| Drain Current-Max (Abs) (ID) |
50A |
| Polarity/Channel Type |
N-CHANNEL |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Case Connection |
DRAIN |
| Operating Mode |
ENHANCEMENT MODE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSSO-G2 |
| Reference Standard |
AEC-Q101 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB50R299CPATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pin Count |
4 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
12A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Turn Off Delay Time |
80 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Rise Time |
14ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
104W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
35 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
299m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 440μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1190pF @ 100V |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSSO-G2 |
| Drain to Source Voltage (Vdss) |
550V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
12A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain-source On Resistance-Max |
0.299Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| Avalanche Energy Rating (Eas) |
289 mJ |
| RoHS Status |
RoHS Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPB530N15N3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
8V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
68W Tc |
| Turn Off Delay Time |
13 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
13 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2008 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
887pF @ 75V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
68W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
53m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 35μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
150V |
| Drain-source On Resistance-Max |
0.053Ohm |
| Pulsed Drain Current-Max (IDM) |
84A |
| Avalanche Energy Rating (Eas) |
60 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB600N25N3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Turn Off Delay Time |
22 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 25A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
136W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
2350pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
29nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
250V |
| Drain-source On Resistance-Max |
0.06Ohm |
| RoHS Status |
ROHS3 Compliant |
| Pin Count |
4 |
| Lead Free |
Contains Lead |
Infineon Technologies IPB60R060C7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Terminal Form |
GULL WING |
| Factory Lead Time |
18 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Series |
CoolMOS™ C7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Power Dissipation (Max) |
162W Tc |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
68nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 15.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 800μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2850pF @ 400V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-263AB |
| Drain Current-Max (Abs) (ID) |
35A |
| Drain-source On Resistance-Max |
0.06Ohm |
| Pulsed Drain Current-Max (IDM) |
135A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
159 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB60R099C6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
37.9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
278W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2008 |
| Series |
CoolMOS™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs(th) (Max) @ Id |
3.5V @ 1.21mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2660pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 18.1A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
119nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
37.9A |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
112A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
796 mJ |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB60R099C7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
22A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
110W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
18 Weeks |
| Published |
2011 |
| Series |
CoolMOS™ C7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 9.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 490μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1819pF @ 400V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-263AB |
| Drain Current-Max (Abs) (ID) |
22A |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
83A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
97 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB60R099CPAATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
255W Tc |
| Turn Off Delay Time |
60 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
8 Weeks |
| Published |
2009 |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Operating Temperature |
-40°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Rds On (Max) @ Id, Vgs |
105m Ω @ 18A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.2mA |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
255W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
31A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Avalanche Energy Rating (Eas) |
800 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB60R099CPATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
31A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
255W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Published |
2006 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
3.5V @ 1.2mA |
| Input Capacitance (Ciss) (Max) @ Vds |
2800pF @ 100V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
99m Ω @ 18A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
31A |
| Drain-source On Resistance-Max |
0.099Ohm |
| Pulsed Drain Current-Max (IDM) |
93A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
800 mJ |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB60R160P6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2008 |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
23.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
176W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Position |
SINGLE |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ P6 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
160m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
4.5V @ 750μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2080pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
44nC @ 10V |
| Terminal Form |
GULL WING |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
23.8A |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.16Ohm |
| Pulsed Drain Current-Max (IDM) |
68A |
| Avalanche Energy Rating (Eas) |
497 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Contains Lead |