Showing 1321–1332 of 7598 results
Infineon Technologies IPB60R165CPATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
21A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
192W Tc |
| Turn Off Delay Time |
50 ns |
| Current Rating |
21A |
| Factory Lead Time |
40 Weeks |
| Published |
2008 |
| Series |
CoolMOS™ |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Voltage - Rated DC |
600V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
4 |
| Input Capacitance (Ciss) (Max) @ Vds |
2000pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
52nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
192W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
12 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
165m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 790μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
21A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Avalanche Energy Rating (Eas) |
522 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB60R199CPAATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2009 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
16A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
139W Tc |
| Turn Off Delay Time |
50 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
8 Weeks |
| Series |
Automotive, AEC-Q101, CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Rds On (Max) @ Id, Vgs |
199m Ω @ 9.9A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1.1mA |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
139W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1520pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Rise Time |
5ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
16A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Avalanche Energy Rating (Eas) |
436 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB60R280C6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104W Tc |
| Turn Off Delay Time |
100 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Published |
2008 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
950pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
104W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
280m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 430μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Rise Time |
11ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Continuous Drain Current (ID) |
13.8A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain-source On Resistance-Max |
0.28Ohm |
| Pulsed Drain Current-Max (IDM) |
40A |
| Avalanche Energy Rating (Eas) |
284 mJ |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Contains Lead |
Infineon Technologies IPB60R360P7ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
9A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
41W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
CoolMOS™ P7 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 140μA |
| Input Capacitance (Ciss) (Max) @ Vds |
555pF @ 400V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
360m Ω @ 2.7A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.36Ohm |
| Pulsed Drain Current-Max (IDM) |
26A |
| DS Breakdown Voltage-Min |
600V |
| Avalanche Energy Rating (Eas) |
27 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB65R095C7ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Surface Mount |
| Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
128W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ C7 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
95m Ω @ 11.8A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 590μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2140pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB65R190C7ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
13A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
72W Tc |
| Packaging |
Tape & Reel (TR) |
| Series |
CoolMOS™ C7 |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
190m Ω @ 5.7A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 290μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1150pF @ 400V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
13A |
| Drain-source On Resistance-Max |
0.19Ohm |
| Pulsed Drain Current-Max (IDM) |
49A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
57 mJ |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB65R310CFDAATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
11.4A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
104.2W Tc |
| Turn Off Delay Time |
45 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
18 Weeks |
| Published |
2008 |
| Series |
Automotive, AEC-Q101, CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
HIGH RELIABILITY |
| Terminal Position |
SINGLE |
| Operating Temperature |
-40°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4.5V @ 440μA |
| Halogen Free |
Halogen Free |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
310m Ω @ 4.4A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1110pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
41nC @ 10V |
| Rise Time |
7.5ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
7 ns |
| Continuous Drain Current (ID) |
11.4A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
650V |
| Avalanche Energy Rating (Eas) |
290 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB65R600C6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
CoolMOS™ |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
7.3A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.1A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Vgs(th) (Max) @ Id |
3.5V @ 210μA |
| Input Capacitance (Ciss) (Max) @ Vds |
440pF @ 100V |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
650V |
| Vgs (Max) |
±20V |
| Drain-source On Resistance-Max |
0.6Ohm |
| Pulsed Drain Current-Max (IDM) |
18A |
| DS Breakdown Voltage-Min |
650V |
| Avalanche Energy Rating (Eas) |
142 mJ |
| Pin Count |
4 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPB70N10S3L12ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
70A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Terminal Position |
SINGLE |
| Factory Lead Time |
14 Weeks |
| Published |
2012 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Input Capacitance (Ciss) (Max) @ Vds |
5550pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
11.8m Ω @ 70A, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 83μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
70A |
| Drain-source On Resistance-Max |
0.012Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
154 mJ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB77N06S3-09
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
77A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
107W Tc |
| Turn Off Delay Time |
29 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
77A |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Published |
2007 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
5335pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
103nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
107W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
8.8m Ω @ 39A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 55μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
51ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
51 ns |
| Continuous Drain Current (ID) |
77A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain-source On Resistance-Max |
0.0088Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
308A |
| Avalanche Energy Rating (Eas) |
170 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPB80N03S4L02ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Turn Off Delay Time |
62 ns |
| Terminal Position |
SINGLE |
| Factory Lead Time |
16 Weeks |
| Published |
2007 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
9750pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 90μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
140nC @ 10V |
| Rise Time |
9ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
30V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Avalanche Energy Rating (Eas) |
260 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB80N04S204ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
10 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Turn Off Delay Time |
56 ns |
| Additional Feature |
AVALANCHE RATED |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5300pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
26 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
45ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
32 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Avalanche Energy Rating (Eas) |
810 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |