Showing 1333–1344 of 7598 results
Infineon Technologies IPB80N04S306ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Turn Off Delay Time |
20 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| HTS Code |
8541.29.00.95 |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3250pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 52μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Rise Time |
10ns |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0054Ohm |
| Avalanche Energy Rating (Eas) |
125 mJ |
| RoHS Status |
ROHS3 Compliant |
| Reach Compliance Code |
not_compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB80N04S3H4ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
115W Tc |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 80A, 10V |
| Terminal Form |
GULL WING |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 65μA |
| Halogen Free |
Halogen Free |
| Terminal Position |
SINGLE |
| Input Capacitance (Ciss) (Max) @ Vds |
3900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0048Ohm |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPB80N06S207ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
250W Tc |
| Turn Off Delay Time |
61 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
OptiMOS™ |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.3m Ω @ 68A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 180μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
37ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
36 ns |
| Continuous Drain Current (ID) |
80A |
| Max Dual Supply Voltage |
55V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB80N06S209ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 125μA |
| Reach Compliance Code |
not_compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain-source On Resistance-Max |
0.0088Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
370 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB80N06S2L07ATMA3
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
OptiMOS™ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
10 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Pbfree Code |
yes |
| JESD-30 Code |
R-PSSO-G2 |
| Current - Continuous Drain (Id) @ 25°C |
80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
130nC @ 10V |
| Power Dissipation-Max |
210W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.7m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3160pF @ 25V |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
80A |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.0097Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
450 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB80N06S2L09ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
190W Tc |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Turn Off Delay Time |
53 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
2620pF @ 25V |
| Terminal Form |
GULL WING |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.2m Ω @ 52A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 125μA |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Rise Time |
19ns |
| Terminal Position |
SINGLE |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.011Ohm |
| Radiation Hardening |
No |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB80N06S2L11ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
158W Tc |
| Turn Off Delay Time |
46 ns |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
10.7m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 93μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2075pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
80nC @ 10V |
| Rise Time |
32ns |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
80A |
| Element Configuration |
Single |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.0147Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
280 mJ |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
158W |
| Lead Free |
Contains Lead |
Infineon Technologies IPB80N06S2LH5ATMA4
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
75 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Reference Standard |
AEC-Q101 |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Rise Time |
23ns |
| Element Configuration |
Single |
| Power Dissipation |
300W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
19 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
190nC @ 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.0062Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Avalanche Energy Rating (Eas) |
700 mJ |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| Operating Mode |
ENHANCEMENT MODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB80N06S3L-05
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
165W Tc |
| Turn Off Delay Time |
65 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Current Rating |
80A |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Published |
2007 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
13060pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
273nC @ 10V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
165W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4.5m Ω @ 69A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 115μA |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
49ns |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
41 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
16V |
| Drain-source On Resistance-Max |
0.0077Ohm |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
320A |
| Avalanche Energy Rating (Eas) |
345 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPB80N06S405ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
107W Tc |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Turn Off Delay Time |
35 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
81nC @ 10V |
| Rise Time |
5ns |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
107W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 60μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
6500pF @ 25V |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0057Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB80N06S407ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Turn Off Delay Time |
23 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
16 Weeks |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
80A |
| Power Dissipation |
79W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
15 ns |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
4500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
56nC @ 10V |
| Rise Time |
3ns |
| Vgs (Max) |
±20V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
320A |
| Drain to Source Resistance |
7.1mOhm |
| Rds On Max |
7.1 mΩ |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPB80N06S4L05ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
107W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
OptiMOS™ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
4.8m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 60μA |
| Input Capacitance (Ciss) (Max) @ Vds |
8180pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain-source On Resistance-Max |
0.0048Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
152 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |