Showing 1345–1356 of 7598 results
Infineon Technologies IPB80N06S4L05ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
107W Tc |
| Turn Off Delay Time |
80 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
107W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
14 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
5.1m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 60μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
8180pF @ 25V |
| Rise Time |
4ns |
| Vgs (Max) |
±16V |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
13 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0048Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB80N06S4L07ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
79W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
OptiMOS™ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5680pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
80A |
| Drain-source On Resistance-Max |
0.0064Ohm |
| Pulsed Drain Current-Max (IDM) |
320A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
71 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB80N06S4L07ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
79W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
50 ns |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
8 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 40μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5680pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
75nC @ 10V |
| Rise Time |
3ns |
| Number of Channels |
1 |
| JESD-30 Code |
R-PSSO-G2 |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
60V |
| Drain-source On Resistance-Max |
0.0064Ohm |
| Drain to Source Breakdown Voltage |
60V |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Infineon Technologies IPB80N08S207ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
300W Tc |
| Turn Off Delay Time |
61 ns |
| Terminal Form |
GULL WING |
| Factory Lead Time |
10 Weeks |
| Published |
2006 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
4700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
26 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.1m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Halogen Free |
Halogen Free |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time |
50ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
30 ns |
| Continuous Drain Current (ID) |
80A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
75V |
| Drain-source On Resistance-Max |
0.0071Ohm |
| Avalanche Energy Rating (Eas) |
810 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB80P04P4L04ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
125W Tc |
| Turn Off Delay Time |
119 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
14 Weeks |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Packaging |
Tape & Reel (TR) |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
65 ns |
| Continuous Drain Current (ID) |
-80A |
| Turn On Delay Time |
28 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
4.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
3800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
176nC @ 10V |
| Rise Time |
13ns |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±16V |
| Power Dissipation |
125W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
-40V |
| Drain-source On Resistance-Max |
0.0071Ohm |
| Drain to Source Breakdown Voltage |
-40V |
| Avalanche Energy Rating (Eas) |
60 mJ |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPB80P04P4L06ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
80A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
88W Tc |
| Turn Off Delay Time |
61 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2011 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Mount |
Surface Mount |
| Factory Lead Time |
14 Weeks |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±16V |
| Power Dissipation |
88W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
17 ns |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
6.4m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 150μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
6580pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
104nC @ 10V |
| Rise Time |
12ns |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
44 ns |
| Continuous Drain Current (ID) |
-80A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
-40V |
| Drain-source On Resistance-Max |
0.0064Ohm |
| Drain to Source Breakdown Voltage |
-40V |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPB90N06S4L04ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
150W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2009 |
| Series |
OptiMOS™ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.4m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
90A |
| Drain-source On Resistance-Max |
0.0034Ohm |
| Pulsed Drain Current-Max (IDM) |
360A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
331 mJ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPB90N06S4L04ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
90A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Form |
GULL WING |
| Turn Off Delay Time |
140 ns |
| Reach Compliance Code |
not_compliant |
| Gate Charge (Qg) (Max) @ Vgs |
170nC @ 10V |
| Rise Time |
6ns |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
21 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.7m Ω @ 90A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 90μA |
| Input Capacitance (Ciss) (Max) @ Vds |
13000pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
90A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
60V |
| Height |
4.4mm |
| Length |
10mm |
| Width |
9.25mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPB90R340C3ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2012 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
15A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
208W Tc |
| Turn Off Delay Time |
400 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
6 Weeks |
| Series |
CoolMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Cut Tape (CT) |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
2400pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
94nC @ 10V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
208W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
70 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
340m Ω @ 9.2A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 1mA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
20ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Continuous Drain Current (ID) |
15A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
900V |
| Drain-source On Resistance-Max |
0.34Ohm |
| Pulsed Drain Current-Max (IDM) |
34A |
| Avalanche Energy Rating (Eas) |
678 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPC028N03L3X1SA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Series |
OptiMOS™ 3 |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Sawn on foil |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Packaging |
Bulk |
| Published |
2013 |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
50mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Halogen Free |
Halogen Free |
| Drain to Source Voltage (Vdss) |
30V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IPC100N04S402ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation (Max) |
150W Tc |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Terminal Position |
DUAL |
| Factory Lead Time |
25 Weeks |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Number of Elements |
1 |
| Terminal Form |
FLAT |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
8100pF @ 25V |
| JESD-30 Code |
R-PDSO-F3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.4m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 80μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
105nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.0024Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| Avalanche Energy Rating (Eas) |
315 mJ |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPC100N04S51R9ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
7V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
16 Weeks |
| Published |
2016 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Position |
DUAL |
| Vgs(th) (Max) @ Id |
3.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
3770pF @ 25V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
1.9m Ω @ 50A, 10V |
| Terminal Form |
FLAT |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
100A |
| Drain-source On Resistance-Max |
0.0023Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
130 mJ |
| RoHS Status |
ROHS3 Compliant |