Showing 1357–1368 of 7598 results
Infineon Technologies IPC100N04S5L2R6ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Package / Case |
8-PowerTDFN |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
75W Tc |
| Terminal Position |
DUAL |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2016 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Vgs(th) (Max) @ Id |
2V @ 30μA |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PDSO-F3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
2.6m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2925pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
55nC @ 10V |
| Terminal Form |
FLAT |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±16V |
| Drain Current-Max (Abs) (ID) |
100A |
| Drain-source On Resistance-Max |
0.0036Ohm |
| Pulsed Drain Current-Max (IDM) |
400A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
66 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPC218N04N3X1SA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
2A Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Packaging |
Bulk |
| Published |
2013 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Factory Lead Time |
18 Weeks |
| Terminal Form |
NO LEAD |
| Terminal Position |
UNSPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-XXUC-N |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
50m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 200μA |
| Drain to Source Voltage (Vdss) |
40V |
| Drain-source On Resistance-Max |
0.05Ohm |
| DS Breakdown Voltage-Min |
40V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPC302N08N3X2SA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
UNSPECIFIED |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Surface Mount |
YES |
| JESD-30 Code |
R-XXUC-N |
| Terminal Form |
NO LEAD |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Polarity/Channel Type |
N-CHANNEL |
| Drain-source On Resistance-Max |
0.1Ohm |
| DS Breakdown Voltage-Min |
80V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPC302N20NFDX1SA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1A Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Packaging |
Bulk |
| Published |
2013 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Position |
UNSPECIFIED |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-XXUC-N |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 270μA |
| Drain to Source Voltage (Vdss) |
200V |
| Drain-source On Resistance-Max |
0.1Ohm |
| DS Breakdown Voltage-Min |
200V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPC302N25N3X1SA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
18 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1A Tj |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Packaging |
Bulk |
| Published |
2010 |
| Series |
OptiMOS™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Position |
UNSPECIFIED |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-XXUC-N |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 270μA |
| Drain to Source Voltage (Vdss) |
250V |
| Drain-source On Resistance-Max |
0.1Ohm |
| DS Breakdown Voltage-Min |
250V |
| RoHS Status |
ROHS3 Compliant |