Showing 1381–1392 of 7598 results
Infineon Technologies IPD090N03LGBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
PG-TO252-3 |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Power Dissipation (Max) |
42W Tc |
| Turn Off Delay Time |
15 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Series |
OptiMOS™ |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1600pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 10V |
| Rise Time |
3ns |
| Drain to Source Voltage (Vdss) |
30V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2.6 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
20V |
| Input Capacitance |
1.6nF |
| Rds On Max |
9 mΩ |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD100N06S403ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
100A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
150W Tc |
| Terminal Form |
GULL WING |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Turn Off Delay Time |
40 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vgs(th) (Max) @ Id |
4V @ 90μA |
| Halogen Free |
Halogen Free |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
150W |
| Case Connection |
DRAIN |
| Turn On Delay Time |
30 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
3.5m Ω @ 100A, 10V |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
10400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
128nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
100A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Drain to Source Breakdown Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
400A |
| Max Junction Temperature (Tj) |
175°C |
| Height |
2.5mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD105N04LGBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
42W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
SINGLE |
| Packaging |
Tape & Reel (TR) |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
2V @ 14μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 20V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
10.5m Ω @ 40A, 10V |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
40A |
| JEDEC-95 Code |
TO-252AA |
| Drain-source On Resistance-Max |
0.0105Ohm |
| Pulsed Drain Current-Max (IDM) |
280A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
10 mJ |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD110N12N3GATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
OptiMOS™ |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Factory Lead Time |
18 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
not_compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| JESD-609 Code |
e3 |
| Power Dissipation-Max |
136W Tc |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Turn On Delay Time |
16 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
11m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 83μA (Typ) |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
4310pF @ 60V |
| Current - Continuous Drain (Id) @ 25°C |
75A Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
8 ns |
| Turn-Off Delay Time |
24 ns |
| Continuous Drain Current (ID) |
75A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
120V |
| Drain-source On Resistance-Max |
0.011Ohm |
| Avalanche Energy Rating (Eas) |
120 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD122N10N3GBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
no |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
59A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
6V 10V |
| Power Dissipation (Max) |
94W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Series |
OptiMOS™ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
2500pF @ 50V |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.2m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id |
3.5V @ 46μA |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Drain to Source Voltage (Vdss) |
100V |
| Pin Count |
3 |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
59A |
| Drain-source On Resistance-Max |
0.0122Ohm |
| Pulsed Drain Current-Max (IDM) |
236A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
70 mJ |
| Qualification Status |
Not Qualified |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD230N06NGBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Power Dissipation (Max) |
100W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| Additional Feature |
AVALANCHE RATED |
| Terminal Position |
SINGLE |
| Series |
OptiMOS™ |
| Peak Reflow Temperature (Cel) |
260 |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1100pF @ 30V |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 30A, 10V |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| JEDEC-95 Code |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.023Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| DS Breakdown Voltage-Min |
60V |
| Avalanche Energy Rating (Eas) |
150 mJ |
Infineon Technologies IPD25N06S4L30ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| Power Dissipation-Max |
29W Tc |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
30m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 8μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1220pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
25A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
16.3nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±16V |
| Continuous Drain Current (ID) |
25A |
| Max Dual Supply Voltage |
60V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD26N06S2L35ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
68W Tc |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Vgs(th) (Max) @ Id |
2V @ 26μA |
| Input Capacitance (Ciss) (Max) @ Vds |
621pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 13A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
30A |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.047Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
80 mJ |
| RoHS Status |
ROHS3 Compliant |
| Reach Compliance Code |
not_compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD30N06S223ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
100W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Turn Off Delay Time |
24 ns |
| Published |
2006 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Rise Time |
23ns |
| Vgs (Max) |
±20V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
10 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 21A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 50μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
901pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
32nC @ 10V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSSO-G2 |
| Fall Time (Typ) |
18 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
150 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPD30N06S2L-13
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
GULL WING |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Published |
2006 |
| Pbfree Code |
yes |
| Part Status |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
SINGLE |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Vgs(th) (Max) @ Id |
2V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
13m Ω @ 30A, 10V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| Drain to Source Voltage (Vdss) |
55V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
30A |
| Drain-source On Resistance-Max |
0.017Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
55V |
| Avalanche Energy Rating (Eas) |
240 mJ |
| Pin Count |
4 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD30N06S2L23ATMA3
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Pbfree Code |
yes |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2006 |
| Series |
OptiMOS™ |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
10 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-609 Code |
e3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Capacitance (Ciss) (Max) @ Vds |
1091pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
30A Tc |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
100W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 50μA |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
30A |
| Max Dual Supply Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
150 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |