Showing 1393–1404 of 7598 results
Infineon Technologies IPD30N06S4L23ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
36W Tc |
| Turn Off Delay Time |
15 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
12 Weeks |
| Published |
2009 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Rise Time |
1ns |
| Vgs (Max) |
±16V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 10μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
21nC @ 10V |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Fall Time (Typ) |
3 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
60V |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
18 mJ |
| Height |
2.41mm |
| Length |
6.73mm |
| Width |
6.22mm |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD30N08S222ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
30A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Turn Off Delay Time |
33 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
ULTRA LOW RESISTANCE |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
1400pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
21.5m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 80μA |
| Halogen Free |
Halogen Free |
| Gate Charge (Qg) (Max) @ Vgs |
57nC @ 10V |
| Rise Time |
30ns |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
30A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
75V |
| Drain-source On Resistance-Max |
0.0215Ohm |
| Pulsed Drain Current-Max (IDM) |
120A |
| Avalanche Energy Rating (Eas) |
240 mJ |
| RoHS Status |
ROHS3 Compliant |
| Reference Standard |
AEC-Q101 |
| Lead Free |
Contains Lead |
Infineon Technologies IPD350N06LGBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
60V |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Current Rating |
29A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Current - Continuous Drain (Id) @ 25°C |
29A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
13nC @ 5V |
| Power Dissipation-Max |
68W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
68W |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
35m Ω @ 29A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 28μA |
| Halogen Free |
Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
800pF @ 30V |
| Number of Elements |
1 |
| Qualification Status |
Not Qualified |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
29A |
| Threshold Voltage |
1.6V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
60V |
| Avalanche Energy Rating (Eas) |
80 mJ |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Lead Free |
Contains Lead |
Infineon Technologies IPD35N10S3L26ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
35A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
71W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs(th) (Max) @ Id |
2.4V @ 39μA |
| Reach Compliance Code |
not_compliant |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 35A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
39nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
35A |
| Drain-source On Resistance-Max |
0.0319Ohm |
| Pulsed Drain Current-Max (IDM) |
140A |
| DS Breakdown Voltage-Min |
100V |
| Avalanche Energy Rating (Eas) |
175 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD40N03S4L08ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
40A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
42W Tc |
| Turn Off Delay Time |
12 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Rise Time |
1ns |
| Vgs (Max) |
±16V |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
3 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
8.3m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 13μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1520pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| JESD-30 Code |
R-PSSO-G2 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Fall Time (Typ) |
5 ns |
| Continuous Drain Current (ID) |
40A |
| Gate to Source Voltage (Vgs) |
16V |
| Max Dual Supply Voltage |
30V |
| Pulsed Drain Current-Max (IDM) |
160A |
| Height |
2.41mm |
| Length |
6.73mm |
| Width |
6.22mm |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Contains Lead |
Infineon Technologies IPD50N04S309ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
63W Tc |
| Turn Off Delay Time |
16 ns |
| Packaging |
Tape & Reel (TR) |
| Published |
2009 |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
7ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
11 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 28μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
1750pF @ 25V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
6 ns |
| Continuous Drain Current (ID) |
50A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Drain-source On Resistance-Max |
0.009Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| Avalanche Energy Rating (Eas) |
140 mJ |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSSO-G2 |
| Lead Free |
Contains Lead |
Infineon Technologies IPD50N04S408ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
46W Tc |
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Vgs(th) (Max) @ Id |
4V @ 17μA |
| Reach Compliance Code |
not_compliant |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.9m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1780pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs |
22.4nC @ 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Drain to Source Voltage (Vdss) |
40V |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
50A |
| Drain-source On Resistance-Max |
0.0079Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| DS Breakdown Voltage-Min |
40V |
| Avalanche Energy Rating (Eas) |
55 mJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD50N04S4L08ATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code |
e3 |
| Number of Elements |
1 |
| Factory Lead Time |
12 Weeks |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Part Status |
Active |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Rise Time |
8ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Case Connection |
DRAIN |
| Turn On Delay Time |
4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7.3m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 17μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
2340pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
50A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
30nC @ 10V |
| Power Dissipation-Max |
46W Tc |
| Operating Mode |
ENHANCEMENT MODE |
| Vgs (Max) |
+20V, -16V |
| Fall Time (Typ) |
18 ns |
| Turn-Off Delay Time |
11 ns |
| Continuous Drain Current (ID) |
50A |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
40V |
| Pulsed Drain Current-Max (IDM) |
200A |
| Avalanche Energy Rating (Eas) |
55 mJ |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
Infineon Technologies IPD50N06S2L13ATMA2
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
50A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
136W Tc |
| Terminal Position |
SINGLE |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2002 |
| Series |
OptiMOS™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA-LOW RESISTANCE |
| Mount |
Surface Mount |
| Factory Lead Time |
10 Weeks |
| Rds On (Max) @ Id, Vgs |
12.7m Ω @ 34A, 10V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reference Standard |
AEC-Q101 |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
2V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1800pF @ 25V |
| Terminal Form |
GULL WING |
| Gate Charge (Qg) (Max) @ Vgs |
69nC @ 10V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
50A |
| Max Dual Supply Voltage |
55V |
| Drain-source On Resistance-Max |
0.0167Ohm |
| Pulsed Drain Current-Max (IDM) |
200A |
| Avalanche Energy Rating (Eas) |
240 mJ |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD50R399CPATMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Not For New Designs |
| Mount |
Surface Mount |
| Package / Case |
TO-252-3 |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Turn Off Delay Time |
80 ns |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation |
83W |
| Factory Lead Time |
26 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
83W |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Published |
2008 |
| Turn On Delay Time |
35 ns |
| Dual Supply Voltage |
550V |
| Input Capacitance |
890pF |
| Fall Time (Typ) |
14 ns |
| Continuous Drain Current (ID) |
9A |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
500V |
| Drain to Source Breakdown Voltage |
550V |
| Rise Time |
14ns |
| Drain to Source Voltage (Vdss) |
500V |
| Drain to Source Resistance |
399mOhm |
| Rds On Max |
399 mΩ |
| Nominal Vgs |
3 V |
| Height |
2.413mm |
| Length |
6.73mm |
| Width |
6.223mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IPD50R3K0CEBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
1.7A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
13V |
| Power Dissipation (Max) |
18W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Cut Tape (CT) |
| Series |
CoolMOS™ CE |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
6 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
84pF @ 100V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3 Ω @ 400mA, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 30μA |
| Gate Charge (Qg) (Max) @ Vgs |
4.3nC @ 10V |
| Drain to Source Voltage (Vdss) |
500V |
| Reach Compliance Code |
compliant |
| Vgs (Max) |
±20V |
| Drain Current-Max (Abs) (ID) |
1.7A |
| Drain-source On Resistance-Max |
3Ohm |
| Pulsed Drain Current-Max (IDM) |
4.1A |
| DS Breakdown Voltage-Min |
500V |
| Avalanche Energy Rating (Eas) |
18 mJ |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IPD50R500CEAUMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Mounting Type |
Surface Mount |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Series |
CoolMOS™ |
| Pbfree Code |
yes |
| Number of Elements |
1 |
| Part Status |
Active |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Factory Lead Time |
18 Weeks |
| Current - Continuous Drain (Id) @ 25°C |
7.6A Tc |
| Power Dissipation-Max |
57W Tc |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
500m Ω @ 2.3A, 13V |
| Vgs(th) (Max) @ Id |
3.5V @ 200μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
433pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs |
18.7nC @ 10V |
| Drain to Source Voltage (Vdss) |
550V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Drive Voltage (Max Rds On,Min Rds On) |
13V |
| Vgs (Max) |
±20V |
| Max Dual Supply Voltage |
500V |
| Drain-source On Resistance-Max |
0.5Ohm |
| Pulsed Drain Current-Max (IDM) |
24A |
| Avalanche Energy Rating (Eas) |
129 mJ |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Contains Lead |